K. Čičo

692 total citations
25 papers, 611 citations indexed

About

K. Čičo is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, K. Čičo has authored 25 papers receiving a total of 611 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Condensed Matter Physics, 19 papers in Electrical and Electronic Engineering and 12 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in K. Čičo's work include GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (17 papers) and Ga2O3 and related materials (11 papers). K. Čičo is often cited by papers focused on GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (17 papers) and Ga2O3 and related materials (11 papers). K. Čičo collaborates with scholars based in Slovakia, Austria and Switzerland. K. Čičo's co-authors include D. Gregušová, R. Stoklas, P. Kordoš, K. Fröhlich, N. Grandjean, J. Kuzmı́k, D. Pogány, J.‐F. Carlin, J. Novák and M. Ťapajna and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

K. Čičo

25 papers receiving 587 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
K. Čičo Slovakia	15	529	465	306	142	116	25	611
Domenica Visalli Belgium	13	658 1.2×	558 1.2×	352 1.2×	131 0.9×	111 1.0×	28	710
Dave Bour United States	8	653 1.2×	601 1.3×	312 1.0×	130 0.9×	153 1.3×	10	751
Hee‐Sung Kang South Korea	13	430 0.8×	480 1.0×	245 0.8×	108 0.8×	132 1.1×	37	585
Osamu Ishiguro Japan	9	479 0.9×	407 0.9×	232 0.8×	93 0.7×	83 0.7×	12	513
Y. Dora United States	9	818 1.5×	681 1.5×	426 1.4×	165 1.2×	156 1.3×	12	886
Zhongda Li United States	10	349 0.7×	383 0.8×	182 0.6×	101 0.7×	90 0.8×	34	488
Chang Soo Suh United States	9	457 0.9×	308 0.7×	263 0.9×	134 0.9×	86 0.7×	11	498
Yoshiki Yano Japan	12	434 0.8×	304 0.7×	270 0.9×	139 1.0×	81 0.7×	33	471
A. P. Zhang United States	11	620 1.2×	484 1.0×	254 0.8×	155 1.1×	182 1.6×	12	674
Marcin Miczek Japan	7	548 1.0×	511 1.1×	348 1.1×	116 0.8×	81 0.7×	9	601

Countries citing papers authored by K. Čičo

Since Specialization

Citations

This map shows the geographic impact of K. Čičo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Čičo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Čičo more than expected).

Fields of papers citing papers by K. Čičo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Čičo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Čičo. The network helps show where K. Čičo may publish in the future.

Co-authorship network of co-authors of K. Čičo

This figure shows the co-authorship network connecting the top 25 collaborators of K. Čičo. A scholar is included among the top collaborators of K. Čičo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Čičo. K. Čičo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Čičo, K., Peter Jančovič, V. Šmatko, et al.. (2015). Resistive switching in nonplanar HfO2-based structures with variable series resistance. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 33(1). 7 indexed citations

Ťapajna, M., N. Killat, V. Palankovski, et al.. (2014). Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors. IEEE Transactions on Electron Devices. 61(8). 2793–2801. 37 indexed citations

Kordoš, P., M. Mikulics, R. Stoklas, et al.. (2012). Thermally Oxidized InAlN of Different Compositions for InAlN/GaN Heterostructure Field-Effect Transistors. Journal of Electronic Materials. 41(11). 3013–3016. 4 indexed citations

Kordoš, P., R. Kúdela, R. Stoklas, et al.. (2012). Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition. Applied Physics Letters. 100(14). 17 indexed citations

Ťapajna, M., D. Gregušová, K. Čičo, et al.. (2012). Early stage degradation of InAlN/GaN HEMTs during electrical stress. 52. 7–10. 2 indexed citations

Čičo, K., K. Hušeková, M. Ťapajna, et al.. (2011). Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(1). 31 indexed citations

Čičo, K., D. Gregušová, J. Kuzmı́k, et al.. (2011). Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation. Solid-State Electronics. 67(1). 74–78. 17 indexed citations

Kuzmı́k, J., Clemens Ostermaier, G. Pozzovivo, et al.. (2010). Proposal and Performance Analysis of Normally Off $ \hbox{n}^{++}$ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier. IEEE Transactions on Electron Devices. 57(9). 2144–2154. 31 indexed citations

Čičo, K., D. Gregušová, Š. Gaži, et al.. (2009). Optimization of the ohmic contact processing in InAlN//GaN high electron mobility transistors for lower temperature of annealing. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(1). 108–111. 6 indexed citations

10.

Hušeková, K., K. Čičo, D. Machajdı́k, et al.. (2009). Preparation of High Permittivity GdScO₃ Films by Liquid Injection MOCVD. ECS Transactions. 25(8). 1061–1064. 5 indexed citations

11.

Ťapajna, M., K. Čičo, J. Kuzmı́k, et al.. (2009). Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al₂O₃/InAlN/GaN heterostructures. Semiconductor Science and Technology. 24(3). 35008–35008. 40 indexed citations

12.

Fröhlich, K., Á. Vincze, Edmund Dobročka, et al.. (2009). Thermal Stability of GdScO₃ Dielectric Films Grown on Si and InAlN/GaN Substrates. MRS Proceedings. 1155. 1 indexed citations

13.

Ťapajna, M., J. Kuzmı́k, K. Čičo, et al.. (2009). Interface States and Trapping Effects in Al₂O₃- and ZrO₂/InAlN/AlN/GaN Metal–Oxide–Semiconductor Heterostructures. Japanese Journal of Applied Physics. 48(9). 90201–90201. 14 indexed citations

14.

Pozzovivo, G., J. Kuzmı́k, S. Golka, et al.. (2008). Influence of GaN capping on performance of InAlN/AlN/GaN MOS‐HEMT with Al₂O₃ gate insulation grown by CVD. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1956–1958. 12 indexed citations

15.

Gregušová, D., R. Stoklas, K. Čičo, et al.. (2007). Characterization of AlGaN/GaN MOSHFETs with Al₂O₃ as gate oxide. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(7). 2720–2723. 11 indexed citations

16.

Gregušová, D., R. Stoklas, K. Čičo, T. Lalinský, & P. Kordoš. (2007). AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al₂O₃ gate oxide. Semiconductor Science and Technology. 22(8). 947–951. 65 indexed citations

17.

Kordoš, P., D. Gregušová, R. Stoklas, K. Čičo, & J. Novák. (2007). Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor. Applied Physics Letters. 90(12). 75 indexed citations

18.

Čičo, K., J. Kuzmı́k, D. Gregušová, et al.. (2007). Optimization and performance of Al2O3/GaN metal–oxide–semiconductor structures. Microelectronics Reliability. 47(4-5). 790–793. 14 indexed citations

19.

Fröhlich, K., R. Lupták, K. Hušeková, et al.. (2006). Properties of Ru∕Hf[sub x]Si[sub 1−x]O[sub y]∕Si Metal Oxide Semiconductor Gate Stack Structures Grown by Atomic Vapor Deposition. Journal of The Electrochemical Society. 153(8). F176–F176. 2 indexed citations

20.

Fröhlich, K., R. Lupták, Edmund Dobročka, et al.. (2006). Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition. Materials Science in Semiconductor Processing. 9(6). 1065–1072. 20 indexed citations

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