K. Fröhlich

2.4k total citations
162 papers, 2.0k citations indexed

About

K. Fröhlich is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, K. Fröhlich has authored 162 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 104 papers in Electrical and Electronic Engineering, 62 papers in Materials Chemistry and 61 papers in Condensed Matter Physics. Recurrent topics in K. Fröhlich's work include Semiconductor materials and devices (84 papers), Advanced Memory and Neural Computing (37 papers) and Ferroelectric and Negative Capacitance Devices (34 papers). K. Fröhlich is often cited by papers focused on Semiconductor materials and devices (84 papers), Advanced Memory and Neural Computing (37 papers) and Ferroelectric and Negative Capacitance Devices (34 papers). K. Fröhlich collaborates with scholars based in Slovakia, France and China. K. Fröhlich's co-authors include K. Hušeková, M. Ťapajna, Edmund Dobročka, D. Machajdı́k, J. Kuzmı́k, A. Rosová, Boris Hudec, Jaan Aarik, K. Čičo and N. Grandjean and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

K. Fröhlich

155 papers receiving 2.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. Fröhlich Slovakia 26 1.4k 912 804 680 216 162 2.0k
Masahiro Horita Japan 25 1.4k 1.0× 621 0.7× 1.1k 1.4× 611 0.9× 266 1.2× 122 1.8k
Sung‐Nam Lee South Korea 26 1.2k 0.9× 1.1k 1.2× 1.0k 1.3× 756 1.1× 657 3.0× 172 2.2k
Mariona Coll Spain 28 941 0.7× 1.5k 1.7× 1.1k 1.3× 754 1.1× 264 1.2× 78 2.4k
J. D. Hettinger United States 23 472 0.3× 1.2k 1.3× 456 0.6× 474 0.7× 169 0.8× 66 2.0k
Chan‐Wook Jeon South Korea 27 1.9k 1.4× 1.4k 1.5× 509 0.6× 367 0.5× 403 1.9× 147 2.5k
Duanjun Cai China 20 609 0.4× 564 0.6× 410 0.5× 378 0.6× 115 0.5× 66 1.3k
Qing He China 25 1.1k 0.8× 1.3k 1.4× 656 0.8× 366 0.5× 283 1.3× 61 2.2k
Kunook Chung South Korea 16 512 0.4× 956 1.0× 727 0.9× 495 0.7× 183 0.8× 34 1.4k
Hyobin Yoo South Korea 21 595 0.4× 1.1k 1.2× 440 0.5× 380 0.6× 424 2.0× 42 1.6k
Ren‐Kui Zheng China 28 892 0.6× 1.9k 2.1× 419 0.5× 1.2k 1.8× 232 1.1× 154 2.5k

Countries citing papers authored by K. Fröhlich

Since Specialization
Citations

This map shows the geographic impact of K. Fröhlich's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Fröhlich with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Fröhlich more than expected).

Fields of papers citing papers by K. Fröhlich

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Fröhlich. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Fröhlich. The network helps show where K. Fröhlich may publish in the future.

Co-authorship network of co-authors of K. Fröhlich

This figure shows the co-authorship network connecting the top 25 collaborators of K. Fröhlich. A scholar is included among the top collaborators of K. Fröhlich based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Fröhlich. K. Fröhlich is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Barr, Maïssa K. S., Boris Hudec, Philipp Brüner, et al.. (2022). Additive Manufacturing in Atomic Layer Processing Mode (Small Methods 5/2022). Small Methods. 6(5). 1 indexed citations
2.
Moško, Martin, M. Precner, Miroslav Mikolášek, et al.. (2021). Doping efficiency and electron transport in Al-doped ZnO films grown by atomic layer deposition. Journal of Applied Physics. 130(3). 8 indexed citations
3.
Gucmann, Filip, K. Hušeková, Edmund Dobročka, et al.. (2020). Growth of α- and β-Ga 2 O 3 epitaxial layers on sapphire substrates using liquid-injection MOCVD. Semiconductor Science and Technology. 35(11). 115002–115002. 26 indexed citations
4.
Fröhlich, K., et al.. (2019). Growth of lithium hydride thin films from solutions: Towards solution atomic layer deposition of lithiated films. Beilstein Journal of Nanotechnology. 10. 1443–1451. 2 indexed citations
5.
Niu, Gang, Peng Huang, S. U. Sharath, et al.. (2019). Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy. Materials Research Letters. 7(3). 117–123. 18 indexed citations
6.
Stoklas, R., D. Gregušová, M. Blaho, et al.. (2017). Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2by atomic layer deposition: leakage current and density of states reduction. Semiconductor Science and Technology. 32(4). 45018–45018. 19 indexed citations
7.
Spassov, D., A. Paskaleva, K. Fröhlich, & T. Ivanov. (2017). Effect of oxygen concentration and metal electrode on the resistive switching in MIM capacitors with transition metal oxides. Journal of Physics Conference Series. 794. 12016–12016. 3 indexed citations
8.
Blaho, M., D. Gregušová, Š. Haščı́k, et al.. (2015). Self‐aligned normally‐off metal–oxide–semiconductor n++GaN/InAlN/GaN high electron mobility transistors. physica status solidi (a). 212(5). 1086–1090. 23 indexed citations
9.
Murakami, K., Mathias Rommel, Boris Hudec, et al.. (2014). Nanoscale Characterization of TiO2 Films Grown by Atomic Layer Deposition on RuO2 Electrodes. ACS Applied Materials & Interfaces. 6(4). 2486–2492. 18 indexed citations
10.
Arroval, Tõnis, Lauri Aarik, Raul Rammula, et al.. (2013). Influence of growth temperature on the structure and electrical properties of high‐permittivity TiO2 films in TiCl4‐H2O and TiCl4‐O3 atomic‐layer‐deposition processes. physica status solidi (a). 211(2). 425–432. 14 indexed citations
11.
Fröhlich, K., et al.. (2011). Gadolinium Scandate: Next Candidate for Alternative Gate Dielectric in CMOS Technology?. Journal of Electrical Engineering. 62(1). 54–56. 6 indexed citations
12.
Mikolášek, Miroslav, L. Harmatha, Juraj Breza, et al.. (2011). Analysis of leakage current mechanisms in RuO2–TiO2–RuO2 MIM structures. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(1). 01AC08–01AC08. 7 indexed citations
13.
Ťapajna, M., A. Paskaleva, E. Atanassova, et al.. (2010). Gate oxide thickness dependence of the leakage current mechanism in Ru/Ta2O5/SiON/Si structures. Semiconductor Science and Technology. 25(7). 75007–75007. 7 indexed citations
14.
Čičo, K., D. Gregušová, Š. Gaži, et al.. (2009). Optimization of the ohmic contact processing in InAlN//GaN high electron mobility transistors for lower temperature of annealing. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(1). 108–111. 6 indexed citations
15.
16.
Fröhlich, K., K. Hušeková, D. Machajdı́k, et al.. (2004). Ru and RuO2 gate electrodes for advanced CMOS technology. Materials Science and Engineering B. 109(1-3). 117–121. 51 indexed citations
17.
Audier, M., et al.. (2003). Defects in (La0.7Sr0.3Mno3/SrTiO3)15 superlattices grown by pulsed injection MOCVD. Journal of Crystal Growth. 259(4). 358–366. 6 indexed citations
18.
Pachla, W., R. Diduszko, K. Fröhlich, et al.. (2002). Structure, grain connectivity and pinning of as-deformed commercial MgB2 powder in Cu and Fe/Cu sheaths. Superconductor Science and Technology. 15(7). 1127–1132. 34 indexed citations
19.
Fröhlich, K., D. Machajdı́k, L. Hellemans, & J. Snauwaert. (1999). Growth of high crystalline quality thin epitaxial CeO2 films on (1(1)over-bar-02) sapphire. 9. 341–347. 4 indexed citations
20.
Choy, Jin‐Ho, et al.. (1990). Inter- and Intra-granular Critical Current in $Bi_{1.4}Pb_{0.6}Sr_2Ca_2Cu_{3.6}O_x$ Superconducting Oxide. Bulletin of the Korean Chemical Society. 11(6). 560–563.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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