Alejandro F. Braña

869 total citations
51 papers, 666 citations indexed

About

Alejandro F. Braña is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Alejandro F. Braña has authored 51 papers receiving a total of 666 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 23 papers in Materials Chemistry and 16 papers in Biomedical Engineering. Recurrent topics in Alejandro F. Braña's work include GaN-based semiconductor devices and materials (14 papers), Nanowire Synthesis and Applications (11 papers) and ZnO doping and properties (11 papers). Alejandro F. Braña is often cited by papers focused on GaN-based semiconductor devices and materials (14 papers), Nanowire Synthesis and Applications (11 papers) and ZnO doping and properties (11 papers). Alejandro F. Braña collaborates with scholars based in Spain, France and United States. Alejandro F. Braña's co-authors include B.J. Garcı́a, Adel Matoussi, N. López, E. Muñoz, F. González‐Posada, E. Muñoz, F. Batallán, Aurora Astudillo, F. Calle and J. L. Pau and has published in prestigious journals such as Nano Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

Alejandro F. Braña

49 papers receiving 638 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Alejandro F. Braña Spain 15 288 229 191 128 126 51 666
Yonghe Chen China 12 246 0.9× 201 0.9× 77 0.4× 48 0.4× 129 1.0× 65 513
S. Müller Germany 17 608 2.1× 163 0.7× 247 1.3× 53 0.4× 133 1.1× 71 1.1k
Shiro Yamazaki Japan 15 160 0.6× 106 0.5× 257 1.3× 138 1.1× 30 0.2× 61 818
T. Izumi Japan 16 99 0.3× 442 1.9× 224 1.2× 104 0.8× 147 1.2× 53 686
Atsushi Chiba Japan 16 174 0.6× 57 0.2× 217 1.1× 102 0.8× 39 0.3× 68 630
Kensuke Shiraishi Japan 18 59 0.2× 141 0.6× 403 2.1× 88 0.7× 59 0.5× 132 1.4k
A Kohno Japan 17 307 1.1× 41 0.2× 211 1.1× 69 0.5× 54 0.4× 58 908
Maximilian Koch United States 17 264 0.9× 64 0.3× 108 0.6× 364 2.8× 31 0.2× 47 899
D. Wong United States 19 1.3k 4.3× 767 3.3× 429 2.2× 179 1.4× 315 2.5× 80 2.0k
Shiro Satoh Japan 15 305 1.1× 82 0.4× 156 0.8× 81 0.6× 12 0.1× 48 740

Countries citing papers authored by Alejandro F. Braña

Since Specialization
Citations

This map shows the geographic impact of Alejandro F. Braña's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Alejandro F. Braña with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Alejandro F. Braña more than expected).

Fields of papers citing papers by Alejandro F. Braña

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Alejandro F. Braña. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Alejandro F. Braña. The network helps show where Alejandro F. Braña may publish in the future.

Co-authorship network of co-authors of Alejandro F. Braña

This figure shows the co-authorship network connecting the top 25 collaborators of Alejandro F. Braña. A scholar is included among the top collaborators of Alejandro F. Braña based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Alejandro F. Braña. Alejandro F. Braña is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Olea, J., J. Gonzalo, Jan Siegel, et al.. (2024). Optoelectronic properties of GaP:Ti photovoltaic devices. Materials Today Sustainability. 28. 101008–101008.
2.
Tornín, Juan, Cristina Robledo, Aida Rodríguez, et al.. (2024). A personalized medicine approach identifies enasidenib as an efficient treatment for IDH2 mutant chondrosarcoma. EBioMedicine. 102. 105090–105090. 1 indexed citations
3.
Braña, Alejandro F., et al.. (2023). Ellipsometry Characterisation for the Cd1-xZnxTe1-ySey Semiconductor Used in X-ray and Gamma Radiation Detectors. Crystals. 13(4). 693–693. 1 indexed citations
4.
Braña, Alejandro F., et al.. (2021). Growth of silicon- and carbon-doped GaAs by chemical beam epitaxy using H2-diluted DTBSi and CBr4 precursors. Journal of Crystal Growth. 571. 126242–126242. 3 indexed citations
5.
Fernández, S., et al.. (2021). Roles of Low Temperature Sputtered Indium Tin Oxide for Solar Photovoltaic Technology. Materials. 14(24). 7758–7758. 4 indexed citations
6.
Ruı́z, E., et al.. (2021). Effects of Surface Treatments on the Performance of CdZnTeSe Radiation Detectors. 2013. 33–36. 1 indexed citations
7.
Braña, Alejandro F., et al.. (2021). Vertical Gradient Freeze Growth of two inches Cd1−xZnxTe1−ySey ingots with different Se content. Journal of Crystal Growth. 573. 126291–126291. 11 indexed citations
8.
Braña, Alejandro F., et al.. (2020). Single GaAs nanowire based photodetector fabricated by dielectrophoresis. Nanotechnology. 31(22). 225604–225604. 15 indexed citations
9.
Menéndez, Sofía T., Aida Rodríguez, Laura Santos, et al.. (2019). New Chondrosarcoma Cell Lines with Preserved Stem Cell Properties to Study the Genomic Drift During In Vitro/In Vivo Growth. Journal of Clinical Medicine. 8(4). 455–455. 18 indexed citations
10.
Fernández, S., Alejandro F. Braña, J. Grandal, et al.. (2018). ITO-Based Selective Contacts for Silicon Solar Devices. 1–4. 3 indexed citations
11.
Fernández, S., Fernando García-Pérez, M. Belén Gómez-Mancebo, et al.. (2018). Tailored amorphous ITAZO transparent conductive electrodes. Materials Science in Semiconductor Processing. 90. 252–258. 8 indexed citations
12.
Braña, Alejandro F., et al.. (2016). Series and parallel resistance effects on the C–V and G–V characteristics of $$\mathrm{Al}/\mathrm{SiO}_{2}$$ Al / SiO 2 /Si structure. Journal of Computational Electronics. 15(3). 831–838. 3 indexed citations
13.
García‐Núñez, C., Alejandro F. Braña, N. López, & B.J. Garcı́a. (2015). GaAs nanowires grown by Ga-assisted chemical beam epitaxy: Substrate preparation and growth kinetics. Journal of Crystal Growth. 430. 108–115. 9 indexed citations
14.
González‐Posada, F., A. Redondo‐Cubero, R. Gago, et al.. (2009). High-resolution hydrogen profiling in AlGaN/GaN heterostructures grown by different epitaxial methods. Journal of Physics D Applied Physics. 42(5). 55406–55406. 4 indexed citations
15.
Redondo‐Cubero, A., R. Gago, M. F. Romero, et al.. (2008). Study of SiNx:Hy passivant layers for AlGaN/GaN high electron mobility transistors. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(2). 518–521. 3 indexed citations
16.
Redondo‐Cubero, A., R. Gago, F. González‐Posada, et al.. (2008). Aluminium incorporation in AlxGa1−xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction. Thin Solid Films. 516(23). 8447–8452. 11 indexed citations
17.
Calle, F., Alejandro F. Braña, Y. Cordier, et al.. (2008). High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1971–1973. 25 indexed citations
18.
Romero, M. F., J. Miguel‐Sánchez, Alejandro F. Braña, et al.. (2008). Effects of $\hbox{N}_{2}$ Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT. IEEE Electron Device Letters. 29(3). 209–211. 35 indexed citations
19.
Bougrioua, Z., et al.. (2003). Improved AlGaN/GaN high electron mobility transistor using AlN interlayers. Applied Physics Letters. 82(26). 4827–4829. 24 indexed citations
20.
Hidalgo, M. A., et al.. (1999). Oscillatory effective mass in the two-dimensional electron gas from Shubnikov–de Haas measurements. Solid State Communications. 109(12). 785–790. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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