M. Salvi

1.4k total citations
53 papers, 1.1k citations indexed

About

M. Salvi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. Salvi has authored 53 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 28 papers in Atomic and Molecular Physics, and Optics and 21 papers in Materials Chemistry. Recurrent topics in M. Salvi's work include Semiconductor materials and devices (21 papers), Semiconductor Quantum Structures and Devices (18 papers) and Silicon Nanostructures and Photoluminescence (15 papers). M. Salvi is often cited by papers focused on Semiconductor materials and devices (21 papers), Semiconductor Quantum Structures and Devices (18 papers) and Silicon Nanostructures and Photoluminescence (15 papers). M. Salvi collaborates with scholars based in France, Algeria and India. M. Salvi's co-authors include H. L’Haridon, P.N. Favennec, D. Moutonnet, M. Gauneau, G. Pelous, D. Lecrosnier, Alain Le Corre, P Auvray, A. Guivarc’h and P. Hénoc and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

M. Salvi

50 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Salvi France 15 821 601 389 273 216 53 1.1k
H. L’Haridon France 19 1.2k 1.5× 758 1.3× 854 2.2× 297 1.1× 226 1.0× 76 1.6k
S. J. Chua Singapore 18 729 0.9× 521 0.9× 348 0.9× 153 0.6× 93 0.4× 52 1.0k
Daniela Cavalcoli Italy 16 704 0.9× 502 0.8× 260 0.7× 184 0.7× 155 0.7× 85 936
Sakae Zembutsu Japan 19 590 0.7× 539 0.9× 394 1.0× 249 0.9× 262 1.2× 43 960
M. E. Zvanut United States 21 939 1.1× 565 0.9× 208 0.5× 205 0.8× 395 1.8× 99 1.3k
J. E. Berkeyheiser United States 14 881 1.1× 549 0.9× 437 1.1× 439 1.6× 171 0.8× 19 1.2k
A. Kozanecki Poland 16 710 0.9× 908 1.5× 238 0.6× 204 0.7× 336 1.6× 124 1.1k
Hideo Isshiki Japan 21 791 1.0× 959 1.6× 403 1.0× 74 0.3× 165 0.8× 74 1.2k
T.J.A. Popma Netherlands 16 501 0.6× 229 0.4× 362 0.9× 121 0.4× 275 1.3× 51 825
K. P. Homewood United Kingdom 18 665 0.8× 406 0.7× 651 1.7× 104 0.4× 53 0.2× 66 923

Countries citing papers authored by M. Salvi

Since Specialization
Citations

This map shows the geographic impact of M. Salvi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Salvi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Salvi more than expected).

Fields of papers citing papers by M. Salvi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Salvi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Salvi. The network helps show where M. Salvi may publish in the future.

Co-authorship network of co-authors of M. Salvi

This figure shows the co-authorship network connecting the top 25 collaborators of M. Salvi. A scholar is included among the top collaborators of M. Salvi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Salvi. M. Salvi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Dellasega, D., Valeria Russo, M. Salvi, et al.. (2025). Corrosion behaviour in liquid lead of pristine and irradiated FeCrAlNi coatings deposited by HiPIMS. Materials & Design. 260. 114923–114923.
2.
Salvi, M., et al.. (2023). A versatile 16-pole ion trap setup for investigating photophysics of biomolecular ions. Review of Scientific Instruments. 94(9). 1 indexed citations
3.
Kechouane, M., Tayeb Mohammed‐Brahim, H. L’Haridon, et al.. (1998). Oxygen enhancement of 1-54 μm Er3+luminescence in hydrogenated amorphous silicon. Philosophical Magazine B. 77(1). 137–145. 4 indexed citations
4.
Favennec, P.N., H. L’Haridon, D. Moutonnet, M. Salvi, & M. Gauneau. (1993). Optical Activation of Ion Implanted Rare-Earths. MRS Proceedings. 301. 42 indexed citations
5.
L’Haridon, H., et al.. (1991). Spatial investigation of an iron-doped indium phosphide ingot. Applied Surface Science. 50(1-4). 237–244. 4 indexed citations
6.
Favennec, P.N., et al.. (1991). Anomalous behavior of ion-implanted GaSb. Applied Physics Letters. 59(15). 1872–1874. 63 indexed citations
7.
Gauneau, M., et al.. (1990). Oxygen enhancement induced by ionic implantation in scandium diphthalocyanine thin films. Journal of Applied Physics. 68(1). 66–69. 7 indexed citations
8.
Loualiche, S., H. L’Haridon, M. Salvi, et al.. (1989). Schottky diode and field-effect transistor on InP. Applied Physics Letters. 54(13). 1238–1240. 16 indexed citations
9.
Favennec, P.N., et al.. (1989). Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials. Electronics Letters. 25(11). 718–719. 373 indexed citations
10.
Clarisse, C., et al.. (1989). Spectroscopic and structural studies of scandium diphthalocyanine films. Thin Solid Films. 182(1-2). 307–318. 25 indexed citations
11.
Gauneau, M., Alain Le Corre, M. Salvi, et al.. (1989). Oxygen complexes in III-V compounds as determined by secondary-ion mass spectrometry under cesium bombardment. Journal of Applied Physics. 66(6). 2241–2247. 7 indexed citations
12.
Gauneau, M., A. Regreny, M. Salvi, et al.. (1988). SIMS analysis, under caesium bombardment, of Si in GaAs/(Al, Ga) as superlattices: Detection limit and depth resolution. Surface and Interface Analysis. 11(11). 545–552. 6 indexed citations
13.
Rolland, Amber D., P.N. Favennec, B. Lambert, et al.. (1988). Behaviour of erbium implanted in InP. Journal of Electronic Materials. 17(5). 351–354. 13 indexed citations
14.
Loualiche, S., H. L’Haridon, Alain Le Corre, et al.. (1988). Schottky and field-effect transistor fabrication on InP and GaInAs. Applied Physics Letters. 52(7). 540–542. 37 indexed citations
15.
Rolland, Amber D., P.N. Favennec, B. Lambert, et al.. (1988). Erbium Implanted in III–V Materials. Japanese Journal of Applied Physics. 27(12A). L2348–L2348. 16 indexed citations
16.
Favennec, P.N., H. L’Haridon, Alain Le Corre, M. Salvi, & M. Gauneau. (1987). Nondiffusion and 1.54/μm luminescence of erbium implanted in InP. Electronics Letters. 23(13). 684–686. 12 indexed citations
17.
L’Haridon, H., P.N. Favennec, M. Salvi, & M. Razeghi. (1985). Shallow p + layers in In 0.53 Ga 0.47 As by Hg implantation. Electronics Letters. 21(3). 122–124. 6 indexed citations
18.
Gauneau, M., et al.. (1983). Depth profiles of Fe and Cr in InP after annealing. Nuclear Instruments and Methods in Physics Research. 209-210. 671–675. 3 indexed citations
19.
Auvray, P, A. Guivarc’h, H. L’Haridon, et al.. (1982). Epitaxial regrowth of (100) InP layers amorphized by ion implantation at room temperature. Journal of Applied Physics. 53(9). 6202–6207. 42 indexed citations
20.
Lecrosnier, D., et al.. (1981). Gold gettering in silicon by phosphorous diffusion and argon implantation: Mechanisms and limitations. Journal of Applied Physics. 52(8). 5090–5097. 67 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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