I. Eliashevich

611 total citations
28 papers, 492 citations indexed

About

I. Eliashevich is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, I. Eliashevich has authored 28 papers receiving a total of 492 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 17 papers in Condensed Matter Physics and 16 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in I. Eliashevich's work include GaN-based semiconductor devices and materials (17 papers), Semiconductor Quantum Structures and Devices (16 papers) and Semiconductor Lasers and Optical Devices (10 papers). I. Eliashevich is often cited by papers focused on GaN-based semiconductor devices and materials (17 papers), Semiconductor Quantum Structures and Devices (16 papers) and Semiconductor Lasers and Optical Devices (10 papers). I. Eliashevich collaborates with scholars based in United States, Italy and China. I. Eliashevich's co-authors include Gaudenzio Meneghesso, Enrico Zanoni, J. Diaz, R. F. Karlicek, C. A. Tran, A. Osinsky, H. Yi, M. Vanzi, Manijeh Razeghi and G. Mura and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

I. Eliashevich

25 papers receiving 452 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
I. Eliashevich United States 13 362 331 221 123 80 28 492
S. Kijima Japan 11 360 1.0× 382 1.2× 381 1.7× 198 1.6× 79 1.0× 27 606
R. I. Gorbunov Russia 10 379 1.0× 158 0.5× 285 1.3× 144 1.2× 85 1.1× 26 440
Christophe A. Hurni United States 14 610 1.7× 344 1.0× 293 1.3× 220 1.8× 246 3.1× 22 713
Lisa Sugiura Japan 11 480 1.3× 215 0.6× 302 1.4× 213 1.7× 172 2.1× 23 575
C. Largeron France 7 229 0.6× 265 0.8× 130 0.6× 134 1.1× 63 0.8× 13 415
Tso-Min Chou United States 8 382 1.1× 452 1.4× 168 0.8× 141 1.1× 91 1.1× 14 540
T. D. Osentowski United States 12 333 0.9× 580 1.8× 464 2.1× 108 0.9× 25 0.3× 20 700
Teresa Lermer Germany 14 478 1.3× 271 0.8× 455 2.1× 92 0.7× 111 1.4× 21 610
A. Weimar Germany 14 316 0.9× 262 0.8× 218 1.0× 120 1.0× 56 0.7× 34 409
Torben R. Fortune United States 14 263 0.7× 387 1.2× 169 0.8× 133 1.1× 214 2.7× 26 521

Countries citing papers authored by I. Eliashevich

Since Specialization
Citations

This map shows the geographic impact of I. Eliashevich's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Eliashevich with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Eliashevich more than expected).

Fields of papers citing papers by I. Eliashevich

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Eliashevich. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Eliashevich. The network helps show where I. Eliashevich may publish in the future.

Co-authorship network of co-authors of I. Eliashevich

This figure shows the co-authorship network connecting the top 25 collaborators of I. Eliashevich. A scholar is included among the top collaborators of I. Eliashevich based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. Eliashevich. I. Eliashevich is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Saunier, P., J. L. Jiménez, D.C. Dumka, et al.. (2008). Progress in GaN devices performances and reliability. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6894. 68941I–68941I. 1 indexed citations
2.
Venugopalan, Hari, et al.. (2004). Fabrication of high-lumen InGaN flip chip LEDs. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5187. 260–260. 5 indexed citations
3.
Meneghesso, Gaudenzio, R. Pierobon, Fabiana Rampazzo, et al.. (2003). Reliability analysis of GaN-Based LEDs for solid state illumination. IEICE Transactions on Electronics. 86(10). 2032–2038. 3 indexed citations
4.
Venugopalan, Hari, Xiang Gao, B. S. Shelton, et al.. (2003). Ultraviolet nitride LED fabrication for high-flux white LED. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4996. 195–195. 11 indexed citations
5.
Meneghesso, Gaudenzio, Enrico Zanoni, Gaetano Scamarcio, et al.. (2003). Reliability of visible GaN LEDs in plastic package. Microelectronics Reliability. 43(9-11). 1737–1742. 37 indexed citations
6.
Shelton, B. S., et al.. (2002). Optimizing the external light extraction of nitride LEDs. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4776. 223–223. 5 indexed citations
7.
8.
Razeghi, Manijeh, et al.. (2002). Peculiarities of operation characteristics of high-power InGaAsP/GaAs 0.8 μm laser diodes. 159–160. 1 indexed citations
9.
Meneghesso, Gaudenzio, Enrico Zanoni, G. Mura, et al.. (2002). Failure Modes and Mechanisms of DC-Aged GaN LEDs. physica status solidi (a). 194(2). 389–392. 45 indexed citations
10.
Eliashevich, I., et al.. (2000). <title>InGaAlP and InGaN light-emitting diodes: high-power performance and reliability</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3938. 44–51. 4 indexed citations
11.
Tran, C. A., et al.. (1999). <title>Growth and characterization of high-efficiency InGaN MQW blue and green LEDs from large-scale-production MOCVD reactors</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3621. 43–49. 1 indexed citations
12.
Eliashevich, I., et al.. (1999). <title>InGaN blue light-emitting diodes with optimized n-GaN layer</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3621. 28–36. 45 indexed citations
13.
Li, Yuxin, I. Eliashevich, C. A. Tran, et al.. (1998). Fabrication and characterization of GaN-based blue light-emitting diodes. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3279. 2–2. 1 indexed citations
14.
Yi, H., J. Diaz, I. Eliashevich, et al.. (1996). Comparison of gain and threshold current density for InGaAsP/GaAs (λ=808 nm) lasers with different quantum well thickness. Journal of Applied Physics. 79(11). 8832–8834. 7 indexed citations
15.
Wang, Lijun, et al.. (1996). Operating characteristics of Al-free InGaAsP/GaAs single quantum well high-power laser. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2886. 114–114.
16.
Yi, H., et al.. (1995). Temperature dependence of threshold current density Jth and differential efficiency ηd of high-power InGaAsP/GaAs (λ=0.8 μm) lasers. Applied Physics Letters. 66(3). 253–255. 16 indexed citations
17.
Yi, H., J. Diaz, I. Eliashevich, et al.. (1995). Optimized structure for InGaAsP/GaAs 808 nm high power lasers. Applied Physics Letters. 66(24). 3251–3253. 17 indexed citations
18.
Razeghi, Manijeh, I. Eliashevich, J. Diaz, et al.. (1995). High power aluminium-free InGaAsP/GaAs pumping diode lasers. Materials Science and Engineering B. 35(1-3). 34–41. 11 indexed citations
19.
Diaz, J., et al.. (1994). High-power InGaAsP/GaAs 0.8-μm laser diodes and peculiarities of operational characteristics. Applied Physics Letters. 65(8). 1004–1005. 14 indexed citations
20.
Diaz, J., et al.. (1994). InGaP/InGaAsP/GaAs 0.808 /spl mu/m separate confinement laser diodes grown by metalorganic chemical vapor deposition. IEEE Photonics Technology Letters. 6(2). 132–134. 29 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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