M.F. Li

767 total citations
20 papers, 612 citations indexed

About

M.F. Li is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, M.F. Li has authored 20 papers receiving a total of 612 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 5 papers in Atomic and Molecular Physics, and Optics and 5 papers in Biomedical Engineering. Recurrent topics in M.F. Li's work include Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers) and Ferroelectric and Negative Capacitance Devices (7 papers). M.F. Li is often cited by papers focused on Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers) and Ferroelectric and Negative Capacitance Devices (7 papers). M.F. Li collaborates with scholars based in Singapore, United States and Taiwan. M.F. Li's co-authors include G. Chen, C. H. Ang, Dim‐Lee Kwong, D.S.H. Chan, Albert Chin, D. L. Kwong, Chunxiang Zhu, Yinxi Jin, Anyan Du and Mingbin Yu and has published in prestigious journals such as IEEE Electron Device Letters, IEEE Transactions on Instrumentation and Measurement and IEEE Photonics Technology Letters.

In The Last Decade

M.F. Li

18 papers receiving 588 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M.F. Li Singapore 11 598 110 69 45 29 20 612
J.A. Babcock United States 15 665 1.1× 79 0.7× 77 1.1× 57 1.3× 46 1.6× 29 681
E. Dentoni Litta Belgium 12 414 0.7× 106 1.0× 53 0.8× 50 1.1× 30 1.0× 69 469
Reza Arghavani United States 12 450 0.8× 55 0.5× 60 0.9× 76 1.7× 27 0.9× 30 479
G. Ribes France 14 924 1.5× 121 1.1× 54 0.8× 29 0.6× 55 1.9× 49 940
Jeff J. Peterson United States 16 629 1.1× 145 1.3× 42 0.6× 18 0.4× 34 1.2× 35 660
Toshihiro Sekigawa Japan 9 339 0.6× 46 0.4× 34 0.5× 40 0.9× 31 1.1× 48 353
Shuu’ichirou Yamamoto Japan 10 307 0.5× 65 0.6× 126 1.8× 36 0.8× 29 1.0× 40 381
C. Caillat Belgium 11 359 0.6× 68 0.6× 47 0.7× 18 0.4× 20 0.7× 33 368
C. D’Emic United States 11 605 1.0× 197 1.8× 115 1.7× 49 1.1× 39 1.3× 15 630
S. J. Whang Singapore 9 415 0.7× 87 0.8× 135 2.0× 87 1.9× 14 0.5× 16 441

Countries citing papers authored by M.F. Li

Since Specialization
Citations

This map shows the geographic impact of M.F. Li's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.F. Li with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.F. Li more than expected).

Fields of papers citing papers by M.F. Li

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.F. Li. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.F. Li. The network helps show where M.F. Li may publish in the future.

Co-authorship network of co-authors of M.F. Li

This figure shows the co-authorship network connecting the top 25 collaborators of M.F. Li. A scholar is included among the top collaborators of M.F. Li based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.F. Li. M.F. Li is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zheng, Jun, Huan Huang, Wenhui Li, et al.. (2025). Investigation of Electromagnetic and Dynamic Characteristics for On-Board Superconducting Coil Quenching on Superconducting EDS System. IEEE Transactions on Instrumentation and Measurement. 74. 1–12.
2.
Wu, Nan, Qingchun Zhang, Chunxiang Zhu, et al.. (2006). BTI and charge trapping in germanium p- and n-MOSFETs with CVD HfO/sub 2/ dielectric. 555–558. 13 indexed citations
3.
Lai, Chyong‐Huey, Albert Chin, Chien‐Fu Cheng, et al.. (2005). A novel program-erasable high-/spl kappa/ AlN-Si MIS capacitor. IEEE Electron Device Letters. 26(3). 148–150. 12 indexed citations
4.
Yu, Decai, Albert Chin, Chi-Chih Liao, et al.. (2005). Three-dimensional metal gate-high-/spl kappa/-GOI CMOSFETs on 1-poly-6-metal 0.18-/spl mu/m Si devices. IEEE Electron Device Letters. 26(2). 118–120. 21 indexed citations
5.
Bai, Weiping, H.C. Wen, S. Mathew, et al.. (2005). Three-Layer laminated metal gate electrodes with tunable work functions for CMOS applications. IEEE Electron Device Letters. 26(4). 231–233. 28 indexed citations
6.
Zhang, Qingchun, Nan Wu, Chunxiang Zhu, et al.. (2004). Germanium pMOSFET with HfON gate dielectric. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 256–257. 1 indexed citations
7.
Loh, Wei Yip, Byung Jin Cho, Moon Sig Joo, et al.. (2004). Analysis of charge trapping and breakdown mechanism in high-k dielectrics with metal gate electrode using carrier separation. 38.3.1–38.3.4. 15 indexed citations
8.
Lai, Chyong‐Huey, Albert Chin, Chunxiang Zhu, et al.. (2004). A tunable and program-erasable capacitor on Si with excellent tuning memory. 259–262. 5 indexed citations
9.
Lai, Chyong‐Huey, Chien‐Fu Cheng, Albert Chin, et al.. (2004). A novel program-erasable capacitor using high-κ AlN dielectric. National University of Singapore. 77–78. 1 indexed citations
10.
Wu, Nan, Chunxiang Zhu, D.S.H. Chan, et al.. (2004). A TaN–<tex>$hbox HfO_2$</tex>–Ge pMOSFET With Novel<tex>$hbox SiH_4$</tex>Surface Passivation. IEEE Electron Device Letters. 25(9). 631–633. 96 indexed citations
11.
Cho, Byung Jin, M.F. Li, Shi‐Jin Ding, et al.. (2004). Improvement of Voltage Linearity in High-<tex>$kappa$</tex>MIM Capacitors Using<tex>$hbox HfO_2hbox --hbox SiO_2$</tex>Stacked Dielectric. IEEE Electron Device Letters. 25(8). 538–540. 77 indexed citations
12.
Ding, Shi‐Jin, Hang Hu, Chunxiang Zhu, et al.. (2004). Evidence and Understanding of ALD<tex>$hbox HfO_2hbox --hbox Al_2hbox O_3$</tex>Laminate MIM Capacitors Outperforming Sandwich Counterparts. IEEE Electron Device Letters. 25(10). 681–683. 33 indexed citations
13.
Wu, Nan, Chunxiang Zhu, M.F. Li, et al.. (2004). Ge pMOSFET with MOCVD HfO/sub 2/ gate dielectric. 252–253. 1 indexed citations
14.
15.
16.
Chen, G., M.F. Li, D.S.H. Chan, et al.. (2003). Dynamic NBTI of PMOS transistors and its impact on device lifetime. 196–202. 147 indexed citations
17.
Lin, Charles Y., Albert Chin, Yee‐Chia Yeo, et al.. (2003). Fully silicided NiSi gate on La2O3 MOSFETs. IEEE Electron Device Letters. 24(5). 348–350. 23 indexed citations
18.
Chen, G., et al.. (2002). Dynamic NBTI of p-MOS transistors and its impact on MOSFET scaling. IEEE Electron Device Letters. 23(12). 734–736. 127 indexed citations
19.
Chen, Gang, M.F. Li, & Yinxi Jin. (2002). Interaction of interface-traps located at various sites in MOSFETs under stress. IEEE Transactions on Reliability. 51(4). 387–391. 1 indexed citations
20.
Chen, G., M.F. Li, & Yu Xi. (2001). Interface traps at high doping drain extension region in sub-0.25-/spl mu/m MOSTs. IEEE Electron Device Letters. 22(5). 233–235. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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