R.‐P. Vollertsen

1.1k total citations
52 papers, 839 citations indexed

About

R.‐P. Vollertsen is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, R.‐P. Vollertsen has authored 52 papers receiving a total of 839 indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Electrical and Electronic Engineering, 9 papers in Materials Chemistry and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in R.‐P. Vollertsen's work include Semiconductor materials and devices (47 papers), Advancements in Semiconductor Devices and Circuit Design (36 papers) and Integrated Circuits and Semiconductor Failure Analysis (22 papers). R.‐P. Vollertsen is often cited by papers focused on Semiconductor materials and devices (47 papers), Advancements in Semiconductor Devices and Circuit Design (36 papers) and Integrated Circuits and Semiconductor Failure Analysis (22 papers). R.‐P. Vollertsen collaborates with scholars based in Germany, United States and Spain. R.‐P. Vollertsen's co-authors include Ernest Y. Wu, J. Suñé, E. Nowak, D. Harmon, A. Strong, A. Vayshenker, Andreas Martin, H. Reisinger, W.W. Abadeer and W. Lai and has published in prestigious journals such as Journal of The Electrochemical Society, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

R.‐P. Vollertsen

50 papers receiving 798 citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
R.‐P. Vollertsen 804 117 102 52 32 52 839
J.-L. Ogier 720 0.9× 171 1.5× 86 0.8× 22 0.4× 54 1.7× 29 749
M. Denais 1.4k 1.7× 148 1.3× 38 0.4× 40 0.8× 70 2.2× 37 1.4k
Ih-Chin Chen 957 1.2× 188 1.6× 121 1.2× 47 0.9× 81 2.5× 23 987
Dhanoop Varghese 1.3k 1.7× 171 1.5× 36 0.4× 71 1.4× 69 2.2× 52 1.4k
A. Amerasekera 1.8k 2.2× 68 0.6× 67 0.7× 87 1.7× 39 1.2× 60 1.8k
Ben Kaczer 913 1.1× 102 0.9× 37 0.4× 33 0.6× 53 1.7× 25 938
C. Jahan 687 0.9× 151 1.3× 20 0.2× 84 1.6× 49 1.5× 41 728
A. E. Kaloyeros 382 0.5× 60 0.5× 61 0.6× 52 1.0× 53 1.7× 10 427
Shan Deng 668 0.8× 372 3.2× 55 0.5× 40 0.8× 10 0.3× 52 740
C. Kothandaraman 416 0.5× 80 0.7× 33 0.3× 90 1.7× 97 3.0× 28 460

Countries citing papers authored by R.‐P. Vollertsen

Since Specialization
Citations

This map shows the geographic impact of R.‐P. Vollertsen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.‐P. Vollertsen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.‐P. Vollertsen more than expected).

Fields of papers citing papers by R.‐P. Vollertsen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.‐P. Vollertsen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.‐P. Vollertsen. The network helps show where R.‐P. Vollertsen may publish in the future.

Co-authorship network of co-authors of R.‐P. Vollertsen

This figure shows the co-authorship network connecting the top 25 collaborators of R.‐P. Vollertsen. A scholar is included among the top collaborators of R.‐P. Vollertsen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R.‐P. Vollertsen. R.‐P. Vollertsen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Puschkarsky, Katja, et al.. (2019). NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling. IEEE Transactions on Electron Devices. 66(4). 1662–1668. 15 indexed citations
2.
Aresu, S., et al.. (2011). Hot-carrier and recovery effect on p-channel lateral DMOS. 90. 77–81. 5 indexed citations
3.
Reisinger, H., R.‐P. Vollertsen, P.-J. Wagner, et al.. (2009). A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided Oxides. IEEE Transactions on Device and Materials Reliability. 9(2). 106–114. 14 indexed citations
4.
Strong, A., Ernest Y. Wu, R.‐P. Vollertsen, et al.. (2009). Reliability Wearout Mechanisms in Advanced CMOS Technologies. 105 indexed citations
5.
Reisinger, H., R.‐P. Vollertsen, P.-J. Wagner, et al.. (2008). The effect of recovery on NBTI characterization of thick non-nitrided oxides. 1–6. 14 indexed citations
6.
Vollertsen, R.‐P., H. Reisinger, & Christian Schlünder. (2008). Negative Bias Temperature Stress on PFETs within fast Wafer Level Reliability Monitoring. 86–90. 2 indexed citations
7.
Vollertsen, R.‐P. & E. Miranda. (2005). The TDDB power-law model—Physics and experimental evidences. Microelectronics Reliability. 45(12). 1807–1808. 1 indexed citations
8.
Vollertsen, R.‐P.. (2005). Procedure for quantitative fWLR monitoring of gate dielectric reliability. 182–185. 2 indexed citations
9.
Vollertsen, R.‐P. & Ernest Y. Wu. (2004). Gate oxide reliability parameters in the range 1.6 to 10 nm. 10–15. 7 indexed citations
10.
Vollertsen, R.‐P., et al.. (2003). Product level verification of gate oxide reliability projections using DRAM chips. 385–390. 5 indexed citations
11.
12.
Chen, Fen, R.‐P. Vollertsen, Baozhen Li, D. Harmon, & W. Lai. (2002). A new empirical extrapolation method for time-dependent dielectric breakdown reliability projections of thin SiO2 and nitride–oxide dielectrics. Microelectronics Reliability. 42(3). 335–341. 5 indexed citations
13.
Vollertsen, R.‐P. & Wilhelm Kleppmann. (2002). Dependence of dielectric time to breakdown distributions on test structure area. 75–79. 18 indexed citations
14.
Wu, Ernest Y., E. Nowak, A. Vayshenker, et al.. (2001). New global insight in ultrathin oxide reliability using accurate experimental methodology and comprehensive database. IEEE Transactions on Device and Materials Reliability. 1(1). 69–80. 31 indexed citations
15.
Vollertsen, R.‐P., et al.. (1999). Burn-in. 23 indexed citations
16.
Abadeer, W.W. & R.‐P. Vollertsen. (1996). PHYSICAL MECHANISMS OF DIELECTRIC BREAKDOWN IN SiO2 FOR THE RANGE OF −150°C TO 150°C. Quality and Reliability Engineering International. 12(4). 287–289. 2 indexed citations
17.
Vollertsen, R.‐P. & W.W. Abadeer. (1995). Upper voltage and temperature limitations of stress conditions for relevant dielectric breakdown projections. Quality and Reliability Engineering International. 11(4). 233–238. 8 indexed citations
18.
Vollertsen, R.‐P.. (1993). A new approach to statistically modelling the time dependent oxide breakdown. Quality and Reliability Engineering International. 9(4). 325–331. 1 indexed citations
19.
Vollertsen, R.‐P.. (1993). Statistical modelling of time dependent oxide breakdown distributions. Microelectronics Reliability. 33(11-12). 1665–1677. 9 indexed citations
20.
Hezel, Rudolf & R.‐P. Vollertsen. (1984). High efficiency silicon MIS/inversion layer solar cells with very high insulator charge densities. 1113–1117. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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