S.C. Witczak

2.0k total citations
36 papers, 1.6k citations indexed

About

S.C. Witczak is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, S.C. Witczak has authored 36 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 3 papers in Materials Chemistry. Recurrent topics in S.C. Witczak's work include Semiconductor materials and devices (29 papers), Radiation Effects in Electronics (21 papers) and Advancements in Semiconductor Devices and Circuit Design (21 papers). S.C. Witczak is often cited by papers focused on Semiconductor materials and devices (29 papers), Radiation Effects in Electronics (21 papers) and Advancements in Semiconductor Devices and Circuit Design (21 papers). S.C. Witczak collaborates with scholars based in United States, France and Canada. S.C. Witczak's co-authors include Daniel M. Fleetwood, Ronald D. Schrimpf, R.L. Pease, K.F. Galloway, John S. Suehle, R.C. Lacoe, J.R. Schwank, D.C. Mayer, L.C. Riewe and M.R. Shaneyfelt and has published in prestigious journals such as Journal of Applied Physics, Solid-State Electronics and IEEE Transactions on Nuclear Science.

In The Last Decade

S.C. Witczak

31 papers receiving 1.5k citations

Peers

Countries citing papers authored by S.C. Witczak

Since Specialization

Citations

This map shows the geographic impact of S.C. Witczak's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.C. Witczak with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.C. Witczak more than expected).

Fields of papers citing papers by S.C. Witczak

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.C. Witczak. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.C. Witczak. The network helps show where S.C. Witczak may publish in the future.

Co-authorship network of co-authors of S.C. Witczak

This figure shows the co-authorship network connecting the top 25 collaborators of S.C. Witczak. A scholar is included among the top collaborators of S.C. Witczak based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S.C. Witczak. S.C. Witczak is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Displacement Damage in an Irradiated 4H-SiC MESFET 2025 ·IEEE Transactions on Nuclear Science ·S.C. Witczak, (unknown), James W. Palko, J. R. Srour, (unknown)	0
2	Damage Separation in a Bipolar Junction Transistor Following Irradiation With 250-MeV Protons 2019 ·IEEE Transactions on Nuclear Science ·S.C. Witczak, Scott R. Messenger, Daniel M. Fleetwood, Ronald D. Schrimpf, (unknown), (unknown), Dennis A. Adams	6
3	Ionizing Radiation Response of the 4530 Parallel-to- Serial Driver and 4527 Registered Receiver 2017 ·S.C. Witczak, (unknown), (unknown), (unknown), (unknown), (unknown)	0
4	Single Event Transients Induced by Picosecond Pulsed X-Ray Absorption in III–V<newline/> Heterojunction Transistors 2012 ·IEEE Transactions on Nuclear Science ·David Cardoza, S. D. LaLumondiere, (unknown), S.C. Witczak, Yongkun Sin, Brendan Foran, William T. Lotshaw, Steven C. Moss	17
5	Dose-rate sensitivity of modern nMOSFETs 2005 ·IEEE Transactions on Nuclear Science ·S.C. Witczak, R.C. Lacoe, J.V. Osborn, John M. Hutson, Steven C. Moss	43
6	Total-dose tolerance of a chartered semiconductor 0.35-μm CMOS process 2003 ·R.C. Lacoe, J.V. Osborn, D.C. Mayer, S.C. Witczak, Stephanie Brown, (unknown), (unknown)	14
7	Charge separation technique for metal–oxide–silicon capacitors in the presence of hydrogen deactivated dopants 2000 ·Journal of Applied Physics ·S.C. Witczak, P.S. Winokur, R.C. Lacoe, D.C. Mayer	8
8	Thermal-stress effects on enhanced low-dose-rate sensitivity of linear bipolar circuits 2000 ·University of North Texas Digital Library (University of North Texas) ·M.R. Shaneyfelt, James R. Schwank, S.C. Witczak, L.C. Riewe, P.S. Winokur, G.L. Hash	5
9	Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides 2000 ·IEEE Transactions on Nuclear Science ·J.R. Schwank, M.R. Shaneyfelt, P.E. Dodd, V. Ferlet-Cavrois, (unknown), P.S. Winokur, Daniel M. Fleetwood, Philippe Paillet, J.L. Leray, B.L. Draper, S.C. Witczak, L.C. Riewe	51
10	Space charge limited degradation of bipolar oxides at low electric fields 1998 ·IEEE Transactions on Nuclear Science ·S.C. Witczak, R.C. Lacoe, D.C. Mayer, Daniel M. Fleetwood, Ronald D. Schrimpf, K.F. Galloway	107
11	Modeling low-dose-rate effects in irradiated bipolar-base oxides 1998 ·IEEE Transactions on Nuclear Science ·(unknown), C.R. Cirba, Ronald D. Schrimpf, (unknown), A. Michez, Daniel M. Fleetwood, S.C. Witczak, (unknown)	45
12	Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures 1997 ·IEEE Transactions on Nuclear Science ·S.C. Witczak, Ronald D. Schrimpf, Daniel M. Fleetwood, K.F. Galloway, R.C. Lacoe, D.C. Mayer, James M. Puhl, R.L. Pease, John S. Suehle	114
13	ACCELERATED TESTS FOR SIMULATING LOW DOSE RATE GAIN DEGRADATION OF LATERAL AND SUBSTRATE PNP BIPOLAR JUNCTION TRANSISTORS 1996 ·IEEE Transactions on Nuclear Science ·S.C. Witczak, Ronald D. Schrimpf, K.F. Galloway, Daniel M. Fleetwood, R.L. Pease, James M. Puhl, D. Schmidt, (unknown), John S. Suehle	55
14	Gain degradation of lateral and substrate pnp bipolar junction transistors 1996 ·IEEE Transactions on Nuclear Science ·S.C. Witczak, Ronald D. Schrimpf, K.F. Galloway, Daniel M. Fleetwood, R.L. Pease, James M. Puhl, D. Schmidt, W.E. Combs, John S. Suehle	51
15	The determination of Si-SiO/sub 2/ interface trap density in irradiated four-terminal VDMOSFETs using charge pumping 1996 ·IEEE Transactions on Nuclear Science ·S.C. Witczak, K.F. Galloway, Ronald D. Schrimpf, J.L. Titus, J.R. Brews, Gilles Prévost	61
16	Accelerated tests for bounding the low dose rate radiation response of lateral PNP bipolar junction transistors 1996 ·University of North Texas Digital Library (University of North Texas) ·S.C. Witczak, Ronald D. Schrimpf, K.F. Galloway, D. Schmidt, Daniel M. Fleetwood, R.L. Pease, (unknown), John S. Suehle	2
17	Relaxation of Si-SiO/sub 2/ interfacial stress in bipolar screen oxides due to ionizing radiation 1995 ·IEEE Transactions on Nuclear Science ·S.C. Witczak, K.F. Galloway, Ronald D. Schrimpf, John S. Suehle	6
18	Synergetic effects of radiation stress and hot-carrier stress on the current gain of npn bipolar junction transistors 1994 ·IEEE Transactions on Nuclear Science ·S.C. Witczak, S.L. Kosier, Ronald D. Schrimpf, K.F. Galloway	13
19	SYNERGETIC EFFECTS OF RADIATION STRESS AND BIPOLAR JUNCTION TRANSISTORS HOT-CARRIER STRESS ON THE CURRENT GAIN OF NPN 1994 ·S.C. Witczak, S.L. Kosier, Ronald D. Schrimpf, K.F. Galloway	1
20	An experimental comparison of measurement techniques to extract Si-SiO2 interface trap density 1992 ·Solid-State Electronics ·S.C. Witczak, John S. Suehle, Michael Gaitan	87

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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