S.L. Kosier

1.0k total citations
31 papers, 810 citations indexed

About

S.L. Kosier is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S.L. Kosier has authored 31 papers receiving a total of 810 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 4 papers in Materials Chemistry and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S.L. Kosier's work include Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Radiation Effects in Electronics (12 papers). S.L. Kosier is often cited by papers focused on Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Radiation Effects in Electronics (12 papers). S.L. Kosier collaborates with scholars based in United States, France and Finland. S.L. Kosier's co-authors include Ronald D. Schrimpf, Daniel M. Fleetwood, W.E. Combs, A. Wei, R.L. Pease, M. DeLaus, R.N. Nowlin, R.A. Reber, P.S. Winokur and Hugh Barnaby and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

S.L. Kosier

28 papers receiving 736 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S.L. Kosier United States 11 804 48 29 27 18 31 810
M. DeLaus United States 7 675 0.8× 37 0.8× 28 1.0× 22 0.8× 9 0.5× 13 680
E.W. Enlow United States 7 544 0.7× 38 0.8× 40 1.4× 17 0.6× 11 0.6× 12 560
A. Wei United States 12 906 1.1× 44 0.9× 43 1.5× 37 1.4× 14 0.8× 40 917
A. Michez France 11 468 0.6× 37 0.8× 25 0.9× 14 0.5× 2 0.1× 39 499
D Platteter United States 14 458 0.6× 52 1.1× 26 0.9× 5 0.2× 2 0.1× 21 468
L. Tosti France 15 773 1.0× 62 1.3× 95 3.3× 60 2.2× 29 1.6× 32 805
G.W. Dunham United States 12 415 0.5× 48 1.0× 23 0.8× 5 0.2× 3 0.2× 16 426
K. Watson United States 10 310 0.4× 16 0.3× 24 0.8× 20 0.7× 5 0.3× 18 318
F. Bénistant Singapore 10 260 0.3× 34 0.7× 10 0.3× 55 2.0× 22 1.2× 52 294
Alexander Tsibizov Switzerland 10 347 0.4× 31 0.6× 3 0.1× 46 1.7× 6 0.3× 22 379

Countries citing papers authored by S.L. Kosier

Since Specialization
Citations

This map shows the geographic impact of S.L. Kosier's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.L. Kosier with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.L. Kosier more than expected).

Fields of papers citing papers by S.L. Kosier

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.L. Kosier. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.L. Kosier. The network helps show where S.L. Kosier may publish in the future.

Co-authorship network of co-authors of S.L. Kosier

This figure shows the co-authorship network connecting the top 25 collaborators of S.L. Kosier. A scholar is included among the top collaborators of S.L. Kosier based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S.L. Kosier. S.L. Kosier is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Martinella, C., Dennis R. Ball, John M. Hutson, et al.. (2025). Effects of Incident Angle on Single-Event Leakage Current Degradation in Heavy-Ion Irradiated 1800- and 4500-V SiC Power MOSFETs. IEEE Transactions on Nuclear Science. 72(8). 2386–2394.
2.
Haeffner, T. D., J. S. Kauppila, Michael L. Alles, et al.. (2025). Back-Biasing Strategy to Mitigate TID-Induced Threshold Voltage Shift in 22nm FDSOI Transistors. IEEE Transactions on Nuclear Science. 1–1.
3.
Kosier, S.L., Dennis R. Ball, John M. Hutson, et al.. (2025). Physical Model for SiC Power Device Heavy-Ion Burnout Based on Pre-Strike Depletion Capacitance Energy Storage. IEEE Transactions on Nuclear Science. 72(4). 1418–1424. 3 indexed citations
4.
Barnaby, Hugh, Ronald D. Schrimpf, Daniel M. Fleetwood, & S.L. Kosier. (2002). The effects of emitter-tied field plates on lateral PNP ionizing radiation response. 35–38. 2 indexed citations
5.
Kosier, S.L., et al.. (2002). Combination field plate/field ring termination structures for integrated power devices. 34. 182–187. 4 indexed citations
6.
Kosier, S.L., M. DeLaus, A. Wei, Ronald D. Schrimpf, & A. Martínez. (2002). Simple technique for improving the hot-carrier reliability of single-poly bipolar transistors. ed 31. 205–208. 1 indexed citations
7.
Kosier, S.L., et al.. (2001). Improved latch-up immunity in junction-isolated smart power ICs with unbiased guard ring. IEEE Electron Device Letters. 22(12). 600–602. 22 indexed citations
8.
Barnaby, Hugh, C.R. Cirba, Ronald D. Schrimpf, et al.. (2000). Modeling BJT radiation response with non-uniform energy distributions of interface traps. IEEE Transactions on Nuclear Science. 47(3). 514–518. 18 indexed citations
9.
Barnaby, Hugh, C.R. Cirba, Ronald D. Schrimpf, et al.. (1999). Minimizing gain degradation in lateral PNP bipolar junction transistors using gate control. IEEE Transactions on Nuclear Science. 46(6). 1652–1659. 18 indexed citations
10.
Kosier, S.L., et al.. (1995). A method for predicting breakdown voltage of power devices with cylindrical diffused junctions. Solid-State Electronics. 38(8). 1547–1549. 1 indexed citations
11.
Kosier, S.L., A. Wei, Ronald D. Schrimpf, et al.. (1995). Physically based comparison of hot-carrier-induced and ionizing-radiation-induced degradation in BJTs. IEEE Transactions on Electron Devices. 42(3). 436–444. 96 indexed citations
12.
Wei, A., S.L. Kosier, Ronald D. Schrimpf, W.E. Combs, & M. DeLaus. (1995). Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJT's. IEEE Transactions on Electron Devices. 42(5). 923–927. 32 indexed citations
13.
Pease, R.L., S.L. Kosier, Ronald D. Schrimpf, et al.. (1994). Comparison of hot-carrier and radiation induced increases in base current in bipolar transistors. IEEE Transactions on Nuclear Science. 41(6). 2567–2573. 6 indexed citations
14.
Witczak, S.C., S.L. Kosier, Ronald D. Schrimpf, & K.F. Galloway. (1994). Synergetic effects of radiation stress and hot-carrier stress on the current gain of npn bipolar junction transistors. IEEE Transactions on Nuclear Science. 41(6). 2412–2419. 13 indexed citations
15.
Fleetwood, Daniel M., S.L. Kosier, R.N. Nowlin, et al.. (1994). Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates. IEEE Transactions on Nuclear Science. 41(6). 1871–1883. 228 indexed citations
16.
Hasan, Sayed, S.L. Kosier, Ronald D. Schrimpf, & K.F. Galloway. (1994). Effect of neutron irradiation on the breakdown voltage of power MOSFET's. IEEE Transactions on Nuclear Science. 41(6). 2719–2726. 8 indexed citations
17.
Wei, A., S.L. Kosier, Ronald D. Schrimpf, Daniel M. Fleetwood, & W.E. Combs. (1994). Dose-rate effects on radiation-induced bipolar junction transistor gain degradation. Applied Physics Letters. 65(15). 1918–1920. 42 indexed citations
18.
Witczak, S.C., S.L. Kosier, Ronald D. Schrimpf, & K.F. Galloway. (1994). SYNERGETIC EFFECTS OF RADIATION STRESS AND BIPOLAR JUNCTION TRANSISTORS HOT-CARRIER STRESS ON THE CURRENT GAIN OF NPN. 1 indexed citations
19.
Nowlin, R.N., S.L. Kosier, Ronald D. Schrimpf, W.E. Combs, & Daniel M. Fleetwood. (1993). Charge separation in bipolar transistors. 19–23. 3 indexed citations
20.
Kosier, S.L., et al.. (1991). Comparison between the effects of positive noncatastrophic HBM ESD stress in n-channel and p-channel power MOSFETs. IEEE Electron Device Letters. 12(10). 546–549. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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