T. P.

2.7k total citations · 1 hit paper
48 papers, 2.2k citations indexed

About

T. P. is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, T. P. has authored 48 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in T. P.'s work include Semiconductor materials and devices (40 papers), Advancements in Semiconductor Devices and Circuit Design (18 papers) and Ferroelectric and Negative Capacitance Devices (14 papers). T. P. is often cited by papers focused on Semiconductor materials and devices (40 papers), Advancements in Semiconductor Devices and Circuit Design (18 papers) and Ferroelectric and Negative Capacitance Devices (14 papers). T. P. collaborates with scholars based in United States, China and Japan. T. P.'s co-authors include P. V. Dressendorfer, Jin‐Ping Han, Xiao Sun, Jason Hoffman, James W. Reiner, Charles Ahn, Xiaoqing Pan, F. J. Walker, Yasushiro Nishioka and Hao Jiang and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

T. P.

47 papers receiving 2.1k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Ionizing radiation effects in MOS devices and circuits

1989 976 citations T. P., P. V. Dressendorfer Medical Entomology and Zoology profile →

Peers

Countries citing papers authored by T. P.

Since Specialization

Citations

This map shows the geographic impact of T. P.'s research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. P. with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. P. more than expected).

Fields of papers citing papers by T. P.

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. P.. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. P.. The network helps show where T. P. may publish in the future.

Co-authorship network of co-authors of T. P.

This figure shows the co-authorship network connecting the top 25 collaborators of T. P.. A scholar is included among the top collaborators of T. P. based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. P.. T. P. is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Dual-Storage-Port Nonvolatile SRAM Based on Back-End-of-the-Line Processed Hf _0.5 Zr _0.5 O₂ Ferroelectric Capacitors Towards 3D Selector-Free Cross-Point Memory 2020 ·IEEE Journal of the Electron Devices Society ·Hao Jiang, (unknown), Wenliang Chen, T. P.	3
2	A Study of BEOL Processed Hf _0.5 Zr _0.5 O ₂ -based Ferroelectric Capacitors and Their Potential for Automotive Applications 2020 ·Hao Jiang, Maruf Bhuiyan, (unknown), T. P.	12
3	Unveiling the Apparent “Negative Capacitance” Effects Resulting From Pulse Measurements of Ferroelectric-Dielectric Bilayer Capacitors 2020 ·IEEE Electron Device Letters ·Zhan Liu, Hao Jiang, (unknown), T. P.	16
4	Fin-Width Effects on Characteristics of InGaAs-Based Independent Double-Gate FinFETs 2017 ·IEEE Electron Device Letters ·Sung‐Jae Chang, Hong Zhou, Nanbo Gong, (unknown), (unknown), Mengwei Si, Peide D. Ye, T. P.	8
5	Total Ionizing Dose (TID) Effects in Ultra-Thin Body Ge-on-Insulator (GOI) Junctionless CMOSFETs With Recessed Source/Drain and Channel 2016 ·IEEE Transactions on Nuclear Science ·(unknown), Maruf Bhuiyan, Heng Wu, Rong Jiang, Kai Ni, En Xia Zhang, Robert A. Reed, Daniel M. Fleetwood, Peide D. Ye, T. P.	11
6	Total Ionizing Dose (TID) Effects in GaAs MOSFETs With La-Based Epitaxial Gate Dielectrics 2016 ·IEEE Transactions on Nuclear Science ·(unknown), Maruf Bhuiyan, Jingyun Zhang, Xiabing Lou, Mengwei Si, Xian Gong, Rong Jiang, Kai Ni, (unknown), En Xia Zhang, Roy G. Gordon, Robert A. Reed, Daniel M. Fleetwood, Peide D. Ye, T. P.	5
7	SEB Hardened Power MOSFETs With High-K Dielectrics 2015 ·IEEE Transactions on Nuclear Science ·(unknown), (unknown), (unknown), (unknown), Jun Xu, Bo Han, En Xia Zhang, Ronald D. Schrimpf, Daniel M. Fleetwood, T. P.	23
8	Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs 2015 ·IEEE Transactions on Nuclear Science ·(unknown), Mengwei Si, Kai Ni, (unknown), Jin Chen, Sung‐Jae Chang, Xiao Sun, En Xia Zhang, Robert A. Reed, Daniel M. Fleetwood, Peide D. Ye, (unknown), T. P.	27
9	Ferroelectric Field Effect Transistors for Memory Applications 2010 ·Advanced Materials ·Jason Hoffman, Xiaoqing Pan, James W. Reiner, F. J. Walker, Jin‐Ping Han, Charles Ahn, T. P.	261
10	Electron energy‐loss spectroscopy study of thin film hafnium aluminates for novel gate dielectrics 2003 ·Journal of Microscopy ·Susanne Stemmer, (unknown), Weihang Zhu, T. P.	31
11	Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go? 2002 ·IBM Journal of Research and Development ·C. M. Osburn, (unknown), Suyong Han, (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), Weihang Zhu, John R. Hauser, Dim‐Lee Kwong, G. Lucovsky, T. P., Mehmet C. Öztürk	22
12	Transmission electron microscope investigation of SrBi2Ta2O9 memory capacitors on Si with silicon dioxide and silicon nitride as buffers 2000 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·(unknown), Marco Cantoni, J.-M. Sallese, P. Fazan, (unknown), Xinyun Guo, T. P.	3
13	Ferroelectric-gate transistor as a capacitor-less DRAM cell (FEDRAM) 1999 ·Integrated ferroelectrics ·Jin‐Ping Han, T. P.	25
14	SrBi₂Ta₂O₉(SBT) thin films prepared by electrostatic spray 1997 ·Integrated ferroelectrics ·Jin‐Ping Han, Jun Gu, T. P.	5
15	Energy shift of (100)Si/SiO2 interface traps resulting from avalanche hole injection 1992 ·Journal of Applied Physics ·(unknown), T. P.	2
16	Observation of interface traps in the silicon conduction band at the (100)Si/SiO2 interface at 4.2 K 1992 ·Applied Physics Letters ·Warren Anderson, R. G. Wheeler, T. P.	2
17	Metal–oxide–semiconductor gate oxide reliability and the role of fluorine 1992 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·T. P.	44
18	Time-dependent changes of parasitic effects induced by high-field electron injection in metal-oxide-semiconductor transistors 1991 ·Journal of Applied Physics ·Yasushiro Nishioka, Masataka Kato, Yuzuru Ohji, T. P.	1
19	The Effect of Metal Masks on the Plasma Etch Rate of Silicon 1989 ·Journal of The Electrochemical Society ·Theodore H. Fedynyshyn, G. Grynkewich, (unknown), T. P.	18
20	Ionizing radiation effects in MOS devices and circuits breakdown → 1989 ·Medical Entomology and Zoology ·T. P., P. V. Dressendorfer	976

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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