J. R. Srour

2.7k total citations · 1 hit paper
52 papers, 2.0k citations indexed

About

J. R. Srour is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, J. R. Srour has authored 52 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Electrical and Electronic Engineering, 14 papers in Atomic and Molecular Physics, and Optics and 7 papers in Computational Mechanics. Recurrent topics in J. R. Srour's work include Silicon and Solar Cell Technologies (27 papers), Integrated Circuits and Semiconductor Failure Analysis (21 papers) and Semiconductor materials and devices (17 papers). J. R. Srour is often cited by papers focused on Silicon and Solar Cell Technologies (27 papers), Integrated Circuits and Semiconductor Failure Analysis (21 papers) and Semiconductor materials and devices (17 papers). J. R. Srour collaborates with scholars based in United States. J. R. Srour's co-authors include Paul W. Marshall, Cheryl J. Marshall, James W. Palko, O. L. Curtis, R.A. Hartmann, J.M. McGarrity, Kun‐An Chiu, D. H. Lo, M. A. Hopkins and Ryota Nakano and has published in prestigious journals such as Journal of Applied Physics, Proceedings of the IEEE and IEEE Journal of Solid-State Circuits.

In The Last Decade

J. R. Srour

50 papers receiving 1.9k citations

Hit Papers

align trajectories sort by overperformance

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Review of displacement damage effects in silicon devices

2003 517 citations J. R. Srour, Cheryl J. Marshall et al. IEEE Transactions on Nuclear Science profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. R. Srour United States	20	1.8k	253	240	212	200	52	2.0k
C.J. Dale United States	22	1.4k 0.8×	85 0.3×	139 0.6×	289 1.4×	196 1.0×	53	1.5k
Scott R. Messenger United States	25	2.0k 1.1×	367 1.5×	446 1.9×	158 0.7×	105 0.5×	131	2.4k
N. Richard France	24	1.3k 0.7×	683 2.7×	387 1.6×	92 0.4×	166 0.8×	135	2.0k
Timothy R. Oldham United States	28	3.3k 1.8×	351 1.4×	183 0.8×	64 0.3×	106 0.5×	83	3.4k
C. Marcandella France	25	2.0k 1.1×	338 1.3×	570 2.4×	73 0.3×	84 0.4×	108	2.4k
P. V. Dressendorfer United States	28	4.0k 2.2×	988 3.9×	440 1.8×	52 0.2×	87 0.4×	59	4.4k
K.F. Galloway United States	38	4.3k 2.4×	403 1.6×	257 1.1×	44 0.2×	139 0.7×	214	4.6k
A.R. Knudson United States	27	1.6k 0.9×	160 0.6×	325 1.4×	30 0.1×	79 0.4×	114	2.2k
Kazuyuki Hirose Japan	26	2.2k 1.2×	730 2.9×	396 1.6×	57 0.3×	65 0.3×	135	2.5k
R. W. Mountain United States	19	1.0k 0.6×	461 1.8×	247 1.0×	76 0.4×	99 0.5×	72	1.4k

Countries citing papers authored by J. R. Srour

Since Specialization

Citations

This map shows the geographic impact of J. R. Srour's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. R. Srour with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. R. Srour more than expected).

Fields of papers citing papers by J. R. Srour

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. R. Srour. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. R. Srour. The network helps show where J. R. Srour may publish in the future.

Co-authorship network of co-authors of J. R. Srour

This figure shows the co-authorship network connecting the top 25 collaborators of J. R. Srour. A scholar is included among the top collaborators of J. R. Srour based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. R. Srour. J. R. Srour is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Witczak, S.C., et al.. (2025). Displacement Damage in an Irradiated 4H-SiC MESFET. IEEE Transactions on Nuclear Science. 72(5). 1755–1762.

George, J., et al.. (2016). SEE and TID Effects in Transistors and Voltage Reference Devices. 1–8. 2 indexed citations

Srour, J. R. & James W. Palko. (2013). Displacement Damage Effects in Irradiated Semiconductor Devices. IEEE Transactions on Nuclear Science. 60(3). 1740–1766. 201 indexed citations

Srour, J. R., Cheryl J. Marshall, & Paul W. Marshall. (2003). Review of displacement damage effects in silicon devices. IEEE Transactions on Nuclear Science. 50(3). 653–670. 517 indexed citations breakdown →

Srour, J. R., et al.. (1992). Charge transport and trapping in HgCdTe MIS devices. IEEE Transactions on Nuclear Science. 39(6). 2265–2272. 2 indexed citations

Srour, J. R. & R.A. Hartmann. (1989). Enhanced displacement damage effectiveness in irradiated silicon devices. IEEE Transactions on Nuclear Science. 36(6). 1825–1830. 74 indexed citations

Srour, J. R. & R.A. Hartmann. (1985). Effects of Single Neutron Interactions in Silicon Integrated Circuits. IEEE Transactions on Nuclear Science. 32(6). 4195–4200. 28 indexed citations

Srour, J. R., et al.. (1983). Permanent Damage Introduced by Single Particles Incident on Silicon Devices. IEEE Transactions on Nuclear Science. 30(6). 4526–4532. 16 indexed citations

Srour, J. R., et al.. (1981). The Search for Neutron-Induced Hard Errors in VLSI Structures. IEEE Transactions on Nuclear Science. 28(6). 3968–3974. 13 indexed citations

10.

Srour, J. R., et al.. (1980). Transient and Permanent Effects of Neutron Bombardment on a Commercially Available N-Buried-Channel CCD. IEEE Transactions on Nuclear Science. 27(6). 1402–1410. 27 indexed citations

11.

Curtis, O. L., J. R. Srour, & Kun‐An Chiu. (1975). Physical Mechanisms of Radiation Hardening of MOS Devices by Ion Implantation. IEEE Transactions on Nuclear Science. 22(6). 2174–2180. 8 indexed citations

12.

Srour, J. R., et al.. (1975). Damage coefficients in low resistivity silicon. NASA Technical Reports Server (NASA). 1 indexed citations

13.

Curtis, O. L. & J. R. Srour. (1973). Recombination within Disordered Regions: Influence of Barrier Height on Recombination Rate and Injection Level Effects. IEEE Transactions on Nuclear Science. 20(6). 196–203. 14 indexed citations

14.

Srour, J. R., et al.. (1973). Radiation Effects on Semiconductor Materials and Devices.. Defense Technical Information Center (DTIC). 4 indexed citations

15.

Srour, J. R. & O. L. Curtis. (1972). Techniques for Obtaining Recombination-Center Parameters from Carrier Lifetime Studies. Journal of Applied Physics. 43(4). 1779–1784. 3 indexed citations

16.

Srour, J. R. & O. L. Curtis. (1972). Short-Term Annealing in Silicon Devices Following Pulsed 14-MeV Neutron Irradiation. IEEE Transactions on Nuclear Science. 19(6). 362–370. 19 indexed citations

17.

Curtis, O. L., J. R. Srour, & Rudolf Rauch. (1972). Recombination studies on gamma-irradiated n-type silicon. Journal of Applied Physics. 43(11). 4638–4646. 8 indexed citations

18.

Srour, J. R., et al.. (1971). Radiation Effects on MSI/LSI Electronic Devices and Circuits.. Defense Technical Information Center (DTIC). 1 indexed citations

19.

Srour, J. R.. (1970). Short-Term Annealing in Electron-Irradiated p-Type Silicon. IEEE Transactions on Nuclear Science. 17(6). 118–122. 15 indexed citations

20.

Srour, J. R. & O. L. Curtis. (1969). Short-Term Annealing in 14-MeV Neutron-Irradiated Silicon. Journal of Applied Physics. 40(10). 4082–4086. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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