Collin Hitchcock

628 total citations
50 papers, 467 citations indexed

About

Collin Hitchcock is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Collin Hitchcock has authored 50 papers receiving a total of 467 indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Electrical and Electronic Engineering, 10 papers in Condensed Matter Physics and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Collin Hitchcock's work include Silicon Carbide Semiconductor Technologies (32 papers), Semiconductor materials and devices (18 papers) and GaN-based semiconductor devices and materials (10 papers). Collin Hitchcock is often cited by papers focused on Silicon Carbide Semiconductor Technologies (32 papers), Semiconductor materials and devices (18 papers) and GaN-based semiconductor devices and materials (10 papers). Collin Hitchcock collaborates with scholars based in United States, Japan and Canada. Collin Hitchcock's co-authors include T. Paul Chow, R.J. Gutmann, G.W. Charache, R. Dahal, H. Ehsani, I. Bhat, Wei Ji, Ishwara B. Bhat, Reza Ghandi and Michael L. Freeman and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

In The Last Decade

Collin Hitchcock

48 papers receiving 456 citations

Peers

Countries citing papers authored by Collin Hitchcock

Since Specialization

Citations

This map shows the geographic impact of Collin Hitchcock's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Collin Hitchcock with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Collin Hitchcock more than expected).

Fields of papers citing papers by Collin Hitchcock

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Collin Hitchcock. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Collin Hitchcock. The network helps show where Collin Hitchcock may publish in the future.

Co-authorship network of co-authors of Collin Hitchcock

This figure shows the co-authorship network connecting the top 25 collaborators of Collin Hitchcock. A scholar is included among the top collaborators of Collin Hitchcock based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Collin Hitchcock. Collin Hitchcock is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	5-kV SiC Deep-Implanted Superjunction MOSFETs 2025 ·IEEE Electron Device Letters ·Reza Ghandi, Collin Hitchcock, (unknown), (unknown), (unknown)	1
2	Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs 2024 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·(unknown), (unknown), Collin Hitchcock, Reza Ghandi, (unknown), T. Paul Chow	1
3	LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices 2024 ·IEEE Transactions on Nuclear Science ·(unknown), Dennis R. Ball, Andrew L. Sternberg, (unknown), (unknown), Robert A. Reed, Michael W. McCurdy, En Xia Zhang, John M. Hutson, Michael L. Alles, (unknown), Biju Jacob, Collin Hitchcock, (unknown), Ronald D. Schrimpf, K.F. Galloway, Arthur F. Witulski	19
4	Single-Event Effects in Heavy-Ion Irradiated 3-kV SiC Charge-Balanced Power Devices 2024 ·IEEE Transactions on Nuclear Science ·(unknown), Dennis R. Ball, (unknown), (unknown), Andrew L. Sternberg, En Xia Zhang, Michael L. Alles, (unknown), Reza Ghandi, Biju Jacob, (unknown), Collin Hitchcock, John M. Hutson, Robert A. Reed, K.F. Galloway, Ronald D. Schrimpf, Arthur F. Witulski	8
5	Experimental Comparative Demonstrations and Analysis of 3.3kV 4H-SiC Common-Drain and Common-Source Bidirectional Charge-Balanced Power DMOSFETs Switching 2024 ·Zishu He, (unknown), Reza Ghandi, Collin Hitchcock, (unknown), T. P. Chow	0
6	SiC Power Module Packaging Using Printed Electronics Materials and Processes 2024 ·IEEE Transactions on Components Packaging and Manufacturing Technology ·(unknown), (unknown), (unknown), Mohammed Alhendi, (unknown), (unknown), Mark D. Poliks, (unknown), (unknown), (unknown), Collin Hitchcock	1
7	Ion-Induced Mesoplasma Formation and Thermal Destruction in 4H-SiC Power MOSFET Devices 2021 ·IEEE Transactions on Nuclear Science ·(unknown), Collin Hitchcock, T. Paul Chow, Wei Ji, (unknown)	37
8	(Invited) Medium-Voltage SiC Devices for Next Generation of Power Conversion 2021 ·ECS Transactions ·Reza Ghandi, Collin Hitchcock, (unknown)	3
9	Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETs 2020 ·Materials science forum ·(unknown), Collin Hitchcock, T. Paul Chow, Wei Ji, (unknown)	19
10	Common-Drain Bidirectional 1200V SiC MOSFETs 2020 ·Materials science forum ·Collin Hitchcock, T. Paul Chow	2
11	Comparative performance evaluation of lateral and vertical GaN high-voltage power field-effect transistors 2019 ·Japanese Journal of Applied Physics ·(unknown), Collin Hitchcock, (unknown)	10
12	Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures 2017 ·Materials science forum ·(unknown), Collin Hitchcock, T. Paul Chow	9
13	Design and Modeling of Blue-Enhanced and Bandwidth-Extended PN Photodiode in Standard CMOS Technology 2017 ·IEEE Transactions on Electron Devices ·(unknown), (unknown), Yiwen Zhang, (unknown), Collin Hitchcock, Payman Zarkesh-Ha, Mona M. Hella	12
14	Lossless turn-off switching projection of lateral and vertical GaN power field-effect transistors 2017 ·physica status solidi (a) ·(unknown), Collin Hitchcock, (unknown)	2
15	High voltage 4H-SiC Bi-directional IGBTs 2016 ·(unknown), Collin Hitchcock, R. Dahal, I. Bhat, T. Paul Chow	6
16	Experimental Demonstration of High-Voltage 4H-SiC Bi-Directional IGBTs 2016 ·IEEE Electron Device Letters ·(unknown), Collin Hitchcock, (unknown), R. Dahal, Ishwara B. Bhat, T. Paul Chow	11
17	Operating Principles, Design Considerations, and Experimental Characteristics of High-Voltage 4H-SiC Bidirectional IGBTs 2016 ·IEEE Transactions on Electron Devices ·(unknown), Collin Hitchcock, (unknown), R. Dahal, Ishwara B. Bhat, T. Paul Chow	21
18	p-Type and n-type doping in GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy 1998 ·Journal of Crystal Growth ·H. Ehsani, I. Bhat, Collin Hitchcock, R.J. Gutmann, G.W. Charache, Michael L. Freeman	21
19	GaInSb and GaInAsSb thermophotovoltaic device fabrication and characterization 1997 ·Collin Hitchcock, R.J. Gutmann, (unknown), H. Ehsani, (unknown), Michael L. Freeman, G.W. Charache	6
20	Characteristics of GaSb and GaInSb layers grown by metalorganic vapor phase epitaxy 1996 ·AIP conference proceedings ·H. Ehsani, I. Bhat, Collin Hitchcock, J.M. Borrego, R.J. Gutmann	6

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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