Xingji Li

3.4k total citations
245 papers, 2.5k citations indexed

About

Xingji Li is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Xingji Li has authored 245 papers receiving a total of 2.5k indexed citations (citations by other indexed papers that have themselves been cited), including 173 papers in Electrical and Electronic Engineering, 82 papers in Materials Chemistry and 35 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Xingji Li's work include Semiconductor materials and devices (103 papers), Radiation Effects in Electronics (83 papers) and Advancements in Semiconductor Devices and Circuit Design (55 papers). Xingji Li is often cited by papers focused on Semiconductor materials and devices (103 papers), Radiation Effects in Electronics (83 papers) and Advancements in Semiconductor Devices and Circuit Design (55 papers). Xingji Li collaborates with scholars based in China, United States and Singapore. Xingji Li's co-authors include Chaoming Liu, Jianqun Yang, Jianqun Yang, Weiqi Li, Ying Wang, Hongbin Geng, Jianqun Yang, Fei Cao, Chenghao Yu and Xiaodong Xu and has published in prestigious journals such as Advanced Materials, Nature Communications and Nano Letters.

In The Last Decade

Xingji Li

220 papers receiving 2.4k citations

Peers

Xingji Li
Yao Cai China
Scott G. Walton United States
Matthew T. Cole United Kingdom
N. Izyumskaya United States
G.Y. Yeom South Korea
Ke Tang China
Tae-Hwan Kim South Korea
Yao Cai China
Xingji Li
Citations per year, relative to Xingji Li Xingji Li (= 1×) peers Yao Cai

Countries citing papers authored by Xingji Li

Since Specialization
Citations

This map shows the geographic impact of Xingji Li's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Xingji Li with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Xingji Li more than expected).

Fields of papers citing papers by Xingji Li

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Xingji Li. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Xingji Li. The network helps show where Xingji Li may publish in the future.

Co-authorship network of co-authors of Xingji Li

This figure shows the co-authorship network connecting the top 25 collaborators of Xingji Li. A scholar is included among the top collaborators of Xingji Li based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Xingji Li. Xingji Li is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Qian, Yanyan, Yadong Wei, Weiqi Li, et al.. (2025). Second harmonic generation and electronic properties in the septuple-atomic-layer MA2Z4 family. Physica E Low-dimensional Systems and Nanostructures. 169. 116202–116202.
2.
Xu, Qian, Bo Gao, Liang Zhao, et al.. (2025). Enhanced Performance of Single-Photon Emitter Hosted in Hexagonal Boron Nitride via Two-Photon Excitation. ACS Photonics. 12(4). 2178–2186. 1 indexed citations
3.
Wu, Xiaodong, et al.. (2024). Impact of SiC power MOSFET interface trap charges on UIS reliability under single pulse. Microelectronics Reliability. 155. 115375–115375.
4.
Ouyang, Z. W., et al.. (2024). First Principles Investigations on the Carbon‐Related Defects in Silicon. physica status solidi (b). 262(1).
5.
Deng, Zun‐Yi, Yuqiang Fang, Gang Tang, et al.. (2024). Robust Ferroelasticity and Carrier Dynamics Across the Domain Wall in Perovskite‐Like van der Waals WO2I2. Advanced Functional Materials. 34(28). 1 indexed citations
6.
Liu, Zhongli, et al.. (2024). Impact of ⁶⁰Co-γ Irradiation Pre-Treatment on Single-Event Burnout in N-Channel Power VDMOS Transistors. IEEE Electron Device Letters. 45(7). 1105–1108. 5 indexed citations
7.
Liu, Zhongli, et al.. (2024). Normalization Indicator of Ion-Induced Radiation Damage in Power VDMOS Transistors. IEEE Transactions on Nuclear Science. 71(8). 1989–1995. 7 indexed citations
8.
Han, Yu, et al.. (2024). Efficient and Accurate Optimal Design Method for Radiation Shielding. IEEE Transactions on Nuclear Science. 71(11). 2475–2483.
9.
Chi, Yaqing, Yang Guo, Ming Tao, et al.. (2024). Gate breakdown induced stuck bits in sub-20 nm FinFET SRAM. Applied Physics Letters. 125(2). 1 indexed citations
10.
Shen, Pei Kang, et al.. (2023). Simulation study on single-event burnout reliability of 4H-SiC trench gate MOSFET with combined P-buried layer. Microelectronics Reliability. 142. 114931–114931. 4 indexed citations
11.
Yang, Jianqun, et al.. (2023). Analysis of radiation defects in gallium nitride using deep level transient spectra and first principles methods. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 545. 165120–165120. 3 indexed citations
12.
Xu, Xiaodong, Jianqun Yang, Yadong Wei, et al.. (2023). Library of intrinsic defects in β-Ga2O3: First-principles studies. Materials Today Communications. 35. 105898–105898. 17 indexed citations
13.
Wang, Zhaoyang, Yuhang Jing, Yi Sun, et al.. (2023). A machine-learning interatomic potential to understand the anisotropic fracture behavior of BaZrO3 material. Solid State Ionics. 401. 116358–116358. 6 indexed citations
14.
Mu, Zhao, Abdullah Rasmita, Jianqun Yang, Xingji Li, & Weibo Gao. (2021). Room‐Temperature Solid‐State Quantum Emitters in the Telecom Range. Advanced Quantum Technologies. 4(12). 10 indexed citations
15.
Yu, Chenghao, Ying Wang, Xingji Li, et al.. (2021). Study of TID Radiation Effects on the Breakdown Voltage of Buried P-Pillar SOI LDMOSFETs. IEEE Transactions on Device and Materials Reliability. 21(3). 303–309. 8 indexed citations
16.
Zhang, Xiaodong, Ying Wang, Meng-Tian Bao, et al.. (2021). A Snapback Suppressed RC-IGBT With N-Si/n-Ge Heterojunction at Low Temperature. IEEE Transactions on Electron Devices. 68(10). 5062–5067. 4 indexed citations
17.
Tang, Yun, Lei Wang, Huiping Zhu, et al.. (2021). Evolution and Mechanism of P-GaN Films Under Proton Irradiation and Its Influence on Electronic Device. IEEE Transactions on Nuclear Science. 69(3). 225–231. 1 indexed citations
18.
Yu, Chenghao, et al.. (2021). Simulation Study on Single-Event Burnout in Rated 1.2-kV 4H-SiC Super-Junction VDMOS. IEEE Transactions on Electron Devices. 68(10). 5034–5040. 25 indexed citations
19.
Орлов, В. И., П. С. Вергелес, E. B. Yakimov, et al.. (2019). Estimations of Low Temperature Dislocation Mobility in GaN. physica status solidi (a). 216(17). 5 indexed citations
20.
Liu, Chaoming, René Hübner, Yufang Xie, et al.. (2018). Ultra-fast annealing manipulated spinodal nano-decomposition in Mn-implanted Ge. Nanotechnology. 30(5). 54001–54001. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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