Jyi-Tsong Lin

728 total citations
124 papers, 517 citations indexed

About

Jyi-Tsong Lin is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, Jyi-Tsong Lin has authored 124 papers receiving a total of 517 indexed citations (citations by other indexed papers that have themselves been cited), including 122 papers in Electrical and Electronic Engineering, 19 papers in Biomedical Engineering and 8 papers in Materials Chemistry. Recurrent topics in Jyi-Tsong Lin's work include Advancements in Semiconductor Devices and Circuit Design (111 papers), Semiconductor materials and devices (111 papers) and Ferroelectric and Negative Capacitance Devices (28 papers). Jyi-Tsong Lin is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (111 papers), Semiconductor materials and devices (111 papers) and Ferroelectric and Negative Capacitance Devices (28 papers). Jyi-Tsong Lin collaborates with scholars based in Taiwan, India and United States. Jyi-Tsong Lin's co-authors include Abhinav Kranti, Md. Hasan Raza Ansari, Meng‐Hsueh Chiang, Wei‐Han Lee, Yun‐Ru Chen, Chih-Ting Yeh, S. Glass, Qing‐Tai Zhao, Yuchun Wang and Keunwoo Kim and has published in prestigious journals such as SHILAP Revista de lepidopterología, Journal of Applied Physics and Scientific Reports.

In The Last Decade

Jyi-Tsong Lin

98 papers receiving 489 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jyi-Tsong Lin Taiwan 12 500 69 37 22 12 124 517
Chenming Hu United States 9 344 0.7× 44 0.6× 44 1.2× 21 1.0× 10 0.8× 19 381
Juin J. Liou United States 10 518 1.0× 70 1.0× 49 1.3× 42 1.9× 30 2.5× 35 568
Javier A. Salcedo United States 16 646 1.3× 41 0.6× 16 0.4× 24 1.1× 15 1.3× 70 669
Zixuan Sun China 12 325 0.7× 23 0.3× 55 1.5× 18 0.8× 10 0.8× 50 362
Subhadeep Mukhopadhyay India 17 844 1.7× 98 1.4× 43 1.2× 63 2.9× 27 2.3× 38 919
Cornelius Fuchs Germany 8 347 0.7× 69 1.0× 77 2.1× 27 1.2× 13 1.1× 12 373
Ru Han China 10 324 0.6× 75 1.1× 36 1.0× 17 0.8× 21 1.8× 31 347
Kaizad Mistry United States 5 396 0.8× 41 0.6× 133 3.6× 22 1.0× 23 1.9× 8 427
Bin Lu China 11 290 0.6× 79 1.1× 69 1.9× 63 2.9× 25 2.1× 51 359
Tewook Bang South Korea 9 333 0.7× 109 1.6× 74 2.0× 22 1.0× 10 0.8× 17 358

Countries citing papers authored by Jyi-Tsong Lin

Since Specialization
Citations

This map shows the geographic impact of Jyi-Tsong Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jyi-Tsong Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jyi-Tsong Lin more than expected).

Fields of papers citing papers by Jyi-Tsong Lin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jyi-Tsong Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jyi-Tsong Lin. The network helps show where Jyi-Tsong Lin may publish in the future.

Co-authorship network of co-authors of Jyi-Tsong Lin

This figure shows the co-authorship network connecting the top 25 collaborators of Jyi-Tsong Lin. A scholar is included among the top collaborators of Jyi-Tsong Lin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jyi-Tsong Lin. Jyi-Tsong Lin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lin, Jyi-Tsong, et al.. (2024). FS-iTFET: advancing tunnel FET technology with Schottky-inductive source and GAA design. SHILAP Revista de lepidopterología. 19(1). 140–140.
2.
Lin, Jyi-Tsong, et al.. (2024). Nanosheet integration of induced tunnel field-effect transistor with lower cost and lower power. SHILAP Revista de lepidopterología. 19(1). 108–108.
3.
Lin, Jyi-Tsong, et al.. (2023). A Simple New Line-Tunneling iTFET with Overlapping Between Gate and Source Contact. 1–4. 1 indexed citations
4.
Lin, Jyi-Tsong, et al.. (2023). Ge/GaAs Heterostructure TFET With Schottky Contact to Suppress Ambipolar and Trap-Assisted Tunneling. IEEE Transactions on Electron Devices. 70(11). 6049–6056. 7 indexed citations
5.
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Lin, Jyi-Tsong, et al.. (2023). Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocket. SHILAP Revista de lepidopterología. 18(1). 121–121. 2 indexed citations
7.
Ansari, Md. Hasan Raza, et al.. (2019). Improving charge retention in capacitorless DRAM through material and device innovation. Japanese Journal of Applied Physics. 58(SB). SBBB03–SBBB03. 2 indexed citations
8.
Lin, Jyi-Tsong, et al.. (2017). Vertical Transistor With n-Bridge and Body on Gate for Low-Power 1T-DRAM Application. IEEE Transactions on Electron Devices. 64(12). 4937–4945. 9 indexed citations
9.
Lin, Jyi-Tsong, et al.. (2016). Improved Retention Time in Twin Gate 1T DRAM With Tunneling Based Read Mechanism. IEEE Electron Device Letters. 37(9). 1127–1130. 40 indexed citations
10.
11.
Lin, Jyi-Tsong, et al.. (2013). Thermal Stability Of A Vertical Soi-Based Capacitorless One-Transistor Dram With Trench-Body Structure. Zenodo (CERN European Organization for Nuclear Research). 7(6). 623–626. 2 indexed citations
12.
Chen, Chun‐Yu, Jyi-Tsong Lin, & Meng‐Hsueh Chiang. (2013). Microscopic study of random dopant fluctuation in silicon nanowire transistors using 3D simulation. 309. 267–270. 1 indexed citations
13.
Lin, Jyi-Tsong, et al.. (2012). Design, simulation, and fabrication of a new poly-Si based capacitor-less 1T-DRAM cell. 30. 85–88. 1 indexed citations
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Sun, Chih-Hung, et al.. (2009). Advanced block oxide MOSFETs for 25 nm technology node. 174–177. 2 indexed citations
17.
Lin, Jyi-Tsong, et al.. (2008). A novel vertical sidewall MOSFET using smart source/body contact without floating-body effect. 481–484. 1 indexed citations
18.
Lin, Jyi-Tsong, et al.. (2007). Self-aligned Block Oxide Process for bFDSOI Devices. 1–4. 1 indexed citations
19.
Lin, Jyi-Tsong, et al.. (2007). Misalignment of the Block Oxide Height in Self-Aligned bSPIFET. 1–4. 1 indexed citations
20.
Lin, Jyi-Tsong, et al.. (2006). A Novel Bottom Gate Polysilicon Thin-Film Transistor with Smart Body Tie. 18. 346–349. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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