Marie-Anne Jaud

471 total citations
16 papers, 299 citations indexed

About

Marie-Anne Jaud is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Marie-Anne Jaud has authored 16 papers receiving a total of 299 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 8 papers in Condensed Matter Physics and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Marie-Anne Jaud's work include Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and GaN-based semiconductor devices and materials (8 papers). Marie-Anne Jaud is often cited by papers focused on Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and GaN-based semiconductor devices and materials (8 papers). Marie-Anne Jaud collaborates with scholars based in France and Switzerland. Marie-Anne Jaud's co-authors include O. Rozeau, T. Poiroux, C. Le Royer, O. Weber, P. Scheiblin, P. Rivallin, F. Bœuf, C. Fenouillet-Béranger, Maud Vinet and Amara Amara and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and Energies.

In The Last Decade

Marie-Anne Jaud

16 papers receiving 293 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Marie-Anne Jaud France 6 291 41 29 29 17 16 299
M.-A. Jaud France 11 325 1.1× 72 1.8× 28 1.0× 20 0.7× 19 1.1× 17 337
Meng-Tian Bao China 11 320 1.1× 26 0.6× 38 1.3× 19 0.7× 25 1.5× 33 343
Guan Huei See Singapore 11 341 1.2× 42 1.0× 11 0.4× 32 1.1× 12 0.7× 44 355
T. Iizuka Japan 9 411 1.4× 21 0.5× 21 0.7× 32 1.1× 14 0.8× 61 424
A.O. Adan United States 9 351 1.2× 28 0.7× 35 1.2× 17 0.6× 8 0.5× 22 358
D. Blachier France 7 145 0.5× 33 0.8× 19 0.7× 18 0.6× 12 0.7× 23 156
Munkang Choi United States 11 329 1.1× 57 1.4× 30 1.0× 18 0.6× 19 1.1× 27 347
S. Makovejev Belgium 14 463 1.6× 42 1.0× 23 0.8× 26 0.9× 9 0.5× 28 472
M. Hattendorf United States 9 355 1.2× 46 1.1× 54 1.9× 84 2.9× 17 1.0× 17 365
S. Cristoloveanu France 9 295 1.0× 22 0.5× 56 1.9× 14 0.5× 21 1.2× 14 312

Countries citing papers authored by Marie-Anne Jaud

Since Specialization
Citations

This map shows the geographic impact of Marie-Anne Jaud's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Marie-Anne Jaud with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Marie-Anne Jaud more than expected).

Fields of papers citing papers by Marie-Anne Jaud

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Marie-Anne Jaud. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Marie-Anne Jaud. The network helps show where Marie-Anne Jaud may publish in the future.

Co-authorship network of co-authors of Marie-Anne Jaud

This figure shows the co-authorship network connecting the top 25 collaborators of Marie-Anne Jaud. A scholar is included among the top collaborators of Marie-Anne Jaud based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Marie-Anne Jaud. Marie-Anne Jaud is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

16 of 16 papers shown
1.
Buckley, Julien, et al.. (2023). Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation. Energies. 16(14). 5447–5447. 5 indexed citations
2.
Triozon, François, et al.. (2022). Calculation of the mobility in Al2O3/GaN electron channel: Effect of p-doping and comparison with experiments. Solid-State Electronics. 198. 108470–108470. 4 indexed citations
3.
Buckley, Julien, Matthew Charles, Marie-Anne Jaud, et al.. (2022). Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors. Energies. 15(19). 7062–7062. 1 indexed citations
4.
5.
Jaud, Marie-Anne, et al.. (2020). Surge Current Capability in lateral AlGaN/GaN Hybrid Anode Diodes with p-GaN/Schottky Anode. SPIRE - Sciences Po Institutional REpository. 233–236. 1 indexed citations
6.
Triozon, François, et al.. (2020). MOS-like approach for compact modeling of High-Electron-Mobility Transistor. SPIRE - Sciences Po Institutional REpository. 221–224. 1 indexed citations
7.
Jaud, Marie-Anne, et al.. (2019). Gate length effect on trapping properties in AlGaN/GaN high-electron-mobility transistors. Semiconductor Science and Technology. 34(4). 45011–45011. 5 indexed citations
8.
Jaud, Marie-Anne, et al.. (2019). Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation. Journal of Applied Physics. 125(3). 10 indexed citations
9.
Hutin, Louis, O. Rozeau, Marie-Anne Jaud, et al.. (2016). Modeling of Fermi-Level Pinning Alleviation With MIS Contacts: n and pMOSFETs Cointegration Considerations—Part I. IEEE Transactions on Electron Devices. 63(9). 3413–3418. 6 indexed citations
10.
Hutin, Louis, O. Rozeau, Marie-Anne Jaud, et al.. (2016). Modeling of Fermi-Level Pinning Alleviation With MIS Contacts: n and pMOSFETs Cointegration Considerations—Part II. IEEE Transactions on Electron Devices. 63(9). 3419–3423. 4 indexed citations
11.
Poiroux, T., O. Rozeau, P. Scheer, et al.. (2015). Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part II: DC and AC Model Description. IEEE Transactions on Electron Devices. 62(9). 2760–2768. 38 indexed citations
12.
Carval, G. Le, et al.. (2014). Further Insights in TFET Operation. IEEE Transactions on Electron Devices. 61(8). 2893–2898. 54 indexed citations
13.
Noël, Jean-Philippe, Olivier Thomas, Marie-Anne Jaud, et al.. (2011). Multi-$V_{T}$ UTBB FDSOI Device Architectures for Low-Power CMOS Circuit. IEEE Transactions on Electron Devices. 58(8). 2473–2482. 137 indexed citations
14.
Rozeau, O., et al.. (2011). Surface potential based model of ultra-thin fully depleted SOI MOSFET for IC simulations. 1–22. 19 indexed citations
15.
Jaud, Marie-Anne, P. Scheiblin, M. Cassé, et al.. (2010). TCAD simulation vs. experimental results in FDSOI technology: From advanced mobility modeling to 6T-SRAM cell characteristics prediction. 283–286. 4 indexed citations
16.
Jaud, Marie-Anne, et al.. (2008). A Pearson Effective Potential for Monte Carlo Simulation of Quantum Confinement Effects in nMOSFETs. IEEE Transactions on Electron Devices. 55(12). 3450–3458. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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