Tewook Bang

424 total citations
17 papers, 358 citations indexed

About

Tewook Bang is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Tewook Bang has authored 17 papers receiving a total of 358 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 2 papers in Biomedical Engineering and 1 paper in Atomic and Molecular Physics, and Optics. Recurrent topics in Tewook Bang's work include Semiconductor materials and devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). Tewook Bang is often cited by papers focused on Semiconductor materials and devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). Tewook Bang collaborates with scholars based in South Korea and United States. Tewook Bang's co-authors include Yang‐Kyu Choi, Jae Hur, Min‐Ho Kang, Seung‐Bae Jeon, Choong‐Ki Kim, Jun-Young Park, Dong Il Lee, Byung-Hyun Lee, Byung-Hyun Lee and Hagyoul Bae and has published in prestigious journals such as Nano Letters, Applied Physics Letters and ACS Applied Materials & Interfaces.

In The Last Decade

Tewook Bang

16 papers receiving 350 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Tewook Bang South Korea 9 333 109 74 22 11 17 358
Oana Moldovan Spain 13 525 1.6× 83 0.8× 112 1.5× 52 2.4× 12 1.1× 29 559
Didier Bouvet Switzerland 11 420 1.3× 150 1.4× 119 1.6× 33 1.5× 9 0.8× 34 459
Ching-Sung Ho China 6 268 0.8× 43 0.4× 33 0.4× 16 0.7× 8 0.7× 7 284
Kunal Singh India 15 930 2.8× 219 2.0× 63 0.9× 16 0.7× 6 0.5× 57 954
Annie Kumar Singapore 12 351 1.1× 77 0.7× 109 1.5× 42 1.9× 22 2.0× 27 367
Sunil Rathore India 10 281 0.8× 61 0.6× 49 0.7× 17 0.8× 3 0.3× 37 310
M. J. Trainor United Kingdom 12 518 1.6× 163 1.5× 219 3.0× 24 1.1× 29 2.6× 17 543
G. Le Carval France 11 352 1.1× 58 0.5× 50 0.7× 34 1.5× 9 0.8× 40 372
Kanghoon Jeon United States 8 473 1.4× 162 1.5× 55 0.7× 32 1.5× 16 1.5× 13 487

Countries citing papers authored by Tewook Bang

Since Specialization
Citations

This map shows the geographic impact of Tewook Bang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tewook Bang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tewook Bang more than expected).

Fields of papers citing papers by Tewook Bang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tewook Bang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tewook Bang. The network helps show where Tewook Bang may publish in the future.

Co-authorship network of co-authors of Tewook Bang

This figure shows the co-authorship network connecting the top 25 collaborators of Tewook Bang. A scholar is included among the top collaborators of Tewook Bang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tewook Bang. Tewook Bang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Lee, Geon‐Beom, et al.. (2021). Lateral profiling of gate dielectric damage by off-state stress and positive-bias temperature instability. Microelectronics Reliability. 127. 114383–114383. 2 indexed citations
2.
Lee, Geon‐Beom, et al.. (2021). Improved Self-Curing Effect in a MOSFET With Gate Biasing. IEEE Electron Device Letters. 42(12). 1731–1734. 5 indexed citations
3.
Lee, Geon‐Beom, et al.. (2019). Analysis of damage curing in a MOSFET with joule heat generated by forward junction current at the source and drain. Microelectronics Reliability. 104. 113548–113548. 1 indexed citations
4.
Bae, Hagyoul, Jae Hur, Choong‐Ki Kim, et al.. (2018). Highly Biased Linear Condition Method for Separately Extracting Source and Drain Resistance in MOSFETs. IEEE Transactions on Electron Devices. 65(2). 419–423. 5 indexed citations
5.
Lee, Geon‐Beom, Choong‐Ki Kim, Jun-Young Park, et al.. (2017). A Novel Technique for Curing Hot-Carrier-Induced Damage by Utilizing the Forward Current of the PN-Junction in a MOSFET. IEEE Electron Device Letters. 38(8). 1012–1014. 23 indexed citations
6.
Bae, Hagyoul, Tewook Bang, Choong‐Ki Kim, et al.. (2017). Improved Technique for Extraction of Effective Mobility by Considering Gate Bias-Dependent Inversion Charges in a Floating-Body Si/SiGe pMOSFET. Journal of Nanoscience and Nanotechnology. 17(5). 3247–3250.
7.
Lee, Seung-Wook, Tewook Bang, Choong‐Ki Kim, et al.. (2017). Comprehensive Study on the Relation Between Low-Frequency Noise and Asymmetric Parasitic Resistances in a Vertical Pillar-Type FET. IEEE Electron Device Letters. 38(8). 1008–1011. 7 indexed citations
8.
Lee, Byung-Hyun, et al.. (2016). Impact of crystalline damage on a vertically integrated junctionless nanowire transistor. Applied Physics Letters. 109(18). 5 indexed citations
9.
Bang, Tewook, Byung-Hyun Lee, Choong‐Ki Kim, et al.. (2016). Low-Frequency Noise Characteristics in SONOS Flash Memory With Vertically Stacked Nanowire FETs. IEEE Electron Device Letters. 38(1). 40–43. 21 indexed citations
10.
Kim, Eungtaek, Choong‐Ki Kim, Tewook Bang, et al.. (2016). Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors. Applied Physics Letters. 108(18). 27 indexed citations
11.
Park, Jun-Young, Dong‐Il Moon, Myeong‐Lok Seol, et al.. (2016). Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection. IEEE Transactions on Electron Devices. 63(3). 910–915. 33 indexed citations
12.
Bang, Tewook, et al.. (2016). Optimization of the intrinsic length of a PIN diode for a reconfigurable antenna. 95?97. 1–4. 2 indexed citations
13.
Kim, Choong‐Ki, Hagyoul Bae, Dong‐Il Moon, et al.. (2016). Investigation of Low-Frequency Noise in Nonvolatile Memory Composed of a Gate- All-Around Junctionless Nanowire FET. IEEE Transactions on Electron Devices. 63(5). 2210–2213. 18 indexed citations
14.
Lee, Byung-Hyun, Jae Hur, Min‐Ho Kang, et al.. (2016). A Vertically Integrated Junctionless Nanowire Transistor. Nano Letters. 16(3). 1840–1847. 62 indexed citations
15.
Hur, Jae, Byung-Hyun Lee, Min‐Ho Kang, et al.. (2016). Comprehensive Analysis of Gate-Induced Drain Leakage in Vertically Stacked Nanowire FETs: Inversion-Mode Versus Junctionless Mode. IEEE Electron Device Letters. 37(5). 541–544. 69 indexed citations
16.
Kim, Choong‐Ki, Eungtaek Kim, Jun-Young Park, et al.. (2016). Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs). ACS Applied Materials & Interfaces. 8(36). 23820–23826. 19 indexed citations
17.
Lee, Byung-Hyun, Min‐Ho Kang, Jun-Young Park, et al.. (2015). Vertically Integrated Multiple Nanowire Field Effect Transistor. Nano Letters. 15(12). 8056–8061. 59 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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