E. Landgraf

464 total citations
28 papers, 335 citations indexed

About

E. Landgraf is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Computer Networks and Communications. According to data from OpenAlex, E. Landgraf has authored 28 papers receiving a total of 335 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 4 papers in Biomedical Engineering and 2 papers in Computer Networks and Communications. Recurrent topics in E. Landgraf's work include Semiconductor materials and devices (25 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Silicon Carbide Semiconductor Technologies (7 papers). E. Landgraf is often cited by papers focused on Semiconductor materials and devices (25 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Silicon Carbide Semiconductor Technologies (7 papers). E. Landgraf collaborates with scholars based in Germany and United States. E. Landgraf's co-authors include W. Rösner, Lorenz Risch, T. Schulz, Michael Specht, F. Hofmann, R.J. Luyken, J. Hartwich, Johannes Kretz, M. Städele and H. Reisinger and has published in prestigious journals such as Japanese Journal of Applied Physics, IEEE Electron Device Letters and Sensors and Actuators A Physical.

In The Last Decade

E. Landgraf

26 papers receiving 318 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
E. Landgraf Germany	12	313	72	42	27	20	28	335
F.S. Shoucair United States	12	398 1.3×	111 1.5×	22 0.5×	42 1.6×	7 0.3×	22	421
Yaqing Chi China	11	407 1.3×	24 0.3×	65 1.5×	28 1.0×	16 0.8×	90	459
Ryun‐Han Koo South Korea	14	431 1.4×	66 0.9×	106 2.5×	12 0.4×	45 2.3×	69	478
Joonho Gil South Korea	10	360 1.2×	91 1.3×	8 0.2×	14 0.5×	8 0.4×	26	392
Costin Anghel France	11	609 1.9×	117 1.6×	21 0.5×	21 0.8×	23 1.1×	25	627
Chenming Hu United States	9	344 1.1×	44 0.6×	44 1.0×	21 0.8×	4 0.2×	19	381
R.J. Reay United States	9	223 0.7×	190 2.6×	16 0.4×	42 1.6×	32 1.6×	14	307
Debdatta Panigrahi Japan	10	207 0.7×	81 1.1×	41 1.0×	12 0.4×	19 0.9×	19	301
M. Noh South Korea	8	346 1.1×	22 0.3×	72 1.7×	35 1.3×	5 0.3×	16	367
Changhyun Kim South Korea	3	185 0.6×	40 0.6×	117 2.8×	15 0.6×	31 1.6×	5	259

Countries citing papers authored by E. Landgraf

Since Specialization

Citations

This map shows the geographic impact of E. Landgraf's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Landgraf with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Landgraf more than expected).

Fields of papers citing papers by E. Landgraf

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Landgraf. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Landgraf. The network helps show where E. Landgraf may publish in the future.

Co-authorship network of co-authors of E. Landgraf

This figure shows the co-authorship network connecting the top 25 collaborators of E. Landgraf. A scholar is included among the top collaborators of E. Landgraf based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Landgraf. E. Landgraf is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Städele, M., et al.. (2008). Reduction of layout variations with stress-compensated hybrid STI fills: a comprehensive analysis. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). asmc 2007. 130–131.

Landgraf, E., et al.. (2007). A novel cell arrangement enabling Trench DRAM scaling to 40nm and beyond. 31–34. 2 indexed citations

Graham, Anthony, J. Hartwich, Johannes Kretz, et al.. (2006). Comparison of Trimming Techniques for Sub-Lithographic Silicon Structures. Japanese Journal of Applied Physics. 45(6S). 5552–5552. 4 indexed citations

Weber, W., W. Rösner, J. Hartwich, et al.. (2006). Planar Double Gate Transistors with Asymmetric Independent Gates. 20. 126–127. 2 indexed citations

Nawaz, Muhammad, et al.. (2006). Full 3D Process and Device Simulation for FinFET optimization. 40–41. 1 indexed citations

Specht, Michael, Theresa Lutz, F. Hofmann, et al.. (2006). Multi-level p+ tri-gate SONOS NAND string arrays. 1–4. 13 indexed citations

Hartwich, J., F. Hofmann, Johannes Kretz, et al.. (2005). Fabrication of ultra-thin-film SOI transistors using the recessed channel concept. Microelectronic Engineering. 78-79. 224–228. 2 indexed citations

Specht, Michael, H. Reisinger, F. Hofmann, et al.. (2005). Charge trapping memory structures with Al2O3 trapping dielectric for high-temperature applications. Solid-State Electronics. 49(5). 716–720. 54 indexed citations

Specht, Michael, Ulrich Dorda, Johannes Kretz, et al.. (2005). 20 nm tri-gate SONOS memory cells with multi-level operation. 1083–1085. 23 indexed citations

10.

Rösner, W., E. Landgraf, H. Schäfer, et al.. (2004). Nanoscale finFETs for low power applications. 763. 452–453. 3 indexed citations

11.

Rösner, W., E. Landgraf, Johannes Kretz, et al.. (2004). Nanoscale FinFETs for low power applications. Solid-State Electronics. 48(10-11). 1819–1823. 18 indexed citations

12.

Luyken, R.J., Michael Specht, W. Rösner, et al.. (2004). Drain leakage mechanisms in fully depleted SOI devices with undoped channel [MOSFETs]. 419–422. 1 indexed citations

13.

Hartwich, J., F. Hofmann, Johannes Kretz, et al.. (2004). Off current adjustment in ultra-thin SOI MOSFETs. 305–308. 3 indexed citations

14.

Specht, Michael, H. Reisinger, M. Städele, et al.. (2004). Retention time of novel charge trapping memories using Al/sub 2/O/sub 3/ dielectrics. e84 c. 155–158. 3 indexed citations

15.

Städele, M., R.J. Luyken, Michael Specht, et al.. (2004). A comprehensive study of corner effects in tri-gate transistors. 165–168. 25 indexed citations

16.

Schulz, T., C. Pacha, R.J. Luyken, et al.. (2003). Impact of technology parameters on device performance of UTB-SOI CMOS. Solid-State Electronics. 48(4). 521–527. 11 indexed citations

17.

Schulz, T., W. Rösner, E. Landgraf, Lorenz Risch, & U. Langmann. (2002). Planar and vertical double gate concepts. Solid-State Electronics. 46(7). 985–989. 25 indexed citations

18.

Hierold, Christofer, et al.. (2002). Implantable low power integrated pressure sensor system for minimal invasive telemetric patient monitoring. 568–573. 25 indexed citations

19.

Hofmann, F., W. Rösner, & E. Landgraf. (2000). High Voltage MOS Transistor with a Folded n- Region for Flash Technology. 232–235. 1 indexed citations

20.

Hierold, C., et al.. (1999). Low power integrated pressure sensor system for medical applications. Sensors and Actuators A Physical. 73(1-2). 58–67. 52 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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