B. Fléchet

557 citations

43 papers · 270 indexed · h-index 10

Impact in

Electrical and Electronic Engineering
- Semiconductor materials and devices
- 3D IC and TSV technologies
- Electromagnetic Compatibility and Noise Suppression
- Electronic Packaging and Soldering Technologies
- Ferroelectric and Negative Capacitance Devices
- Microwave and Dielectric Measurement Techniques
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability

Papers in ⓘ

Electrical and Electronic Engineering 42
- Semiconductor materials and devices 22
- 3D IC and TSV technologies 20
- Electromagnetic Compatibility and Noise Suppression 12
- Electronic Packaging and Soldering Technologies 7
- Low-power high-performance VLSI design 5
- Microwave and Dielectric Measurement Techniques 5
Electronic, Optical and Magnetic Materials 24
- Copper Interconnects and Reliability 23

Co-authors: C. Bermond (33 shared papers)A. Farcy (34 shared papers)T. Lacrevaz (24 shared papers)Philippe Ferrari (3 shared papers)M. Gros‐Jean (5 shared papers)S. Blonkowski (3 shared papers)T. Bertaud (3 shared papers)C. Vallée (2 shared papers)
Journals: Microelectronic Engineering (13 papers)IEEE Electron Device Letters (1 paper)Applied Physics Letters (1 paper)Electronics Letters (1 paper)Journal of Applied Physics (1 paper)
Partner nations: France Switzerland United States

In The Last Decade

B. Fléchet

40 papers receiving 261 citations

Peers

Countries citing papers authored by B. Fléchet

Since Specialization

Citations

This map shows the geographic impact of B. Fléchet's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Fléchet with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Fléchet more than expected).

Fields of papers citing papers by B. Fléchet

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Fléchet. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Fléchet. The network helps show where B. Fléchet may publish in the future.

Co-authors

The 25 scholars most cited alongside B. Fléchet, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Fléchet Line = papers co-authored together B. Fléchet links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 43 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Investigation on TSV impact on 65nm CMOS devices and circuits H. Chaabouni, Maxime Rousseau, Philip R. LeDuc, A. Farcy, R. El Farhane, Aurélie Thuaire, G. Haury, Alexandre Valentian, G. Billiot, M. Assous, F. de Crécy, J. Cluzel, A. Toffoli, D. Bouchu, L. Cadix, T. Lacrevaz, P. Ancey, N. Sillon, B. Fléchet	2010	41
2	Frequency Effect on Voltage Linearity of $ \hbox{ZrO}_{2}$-Based RF Metal–Insulator–Metal Capacitors IEEE Electron Device Letters ·T. Bertaud, S. Blonkowski, C. Bermond, C. Vallée, P. Gonon, M. Gros‐Jean, B. Fléchet	2010	29
3	Time domain characterization of lossy arbitrary characteristic impedance transmission lines IEEE Microwave and Guided Wave Letters ·Philippe Ferrari, B. Fléchet, G. Angénieux	1994	27
4	Ferroelectric properties of Pb(Zr,Ti)O3 thin films until 40 GHz Applied Physics Letters ·Emmanuel Defaÿ, T. Lacrevaz, Trinh Vo, V. Sbrugnera, C. Bermond, M. Aïd, B. Fléchet	2009	19
5	RF characterization and modelling of high density Through Silicon Vias for 3D chip stacking Microelectronic Engineering ·L. Cadix, C. Bermond, C. Fuchs, A. Farcy, Philip R. LeDuc, L. DiCioccio, M. Assous, Maxime Rousseau, F. Lorut, Laurent Chapelon, B. Fléchet, N. Sillon, P. Ancey	2009	19
6	Intercomparison of permittivity measurement techniques for ferroelectric thin layers Journal of Applied Physics ·Patrick Quéffélec, Vincent Laur, Alexis Chevalier, Jean-Michel Le Floch, Damien Passerieux, D. Cros, Valérie Madrangeas, Arnaud le Febvrier, Stéphanie Députier, Maryline Guilloux‐Viry, Grégory Houzet, T. Lacrevaz, C. Bermond, B. Fléchet	2014	17
7	Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors Microelectronic Engineering ·T. Bertaud, C. Bermond, T. Lacrevaz, C. Vallée, Y. Morand, B. Fléchet, A. Farcy, M. Gros‐Jean, S. Blonkowski	2009	17
8	Wide band frequency and in situ characterisation of high permittivity insulators (High-K) for H.F. integrated passives Microelectronic Engineering ·T. Lacrevaz, B. Fléchet, A. Farcy, J. Torrès, M. Gros‐Jean, C. Bermond, Trinh Vo, O. Cueto, B. Blampey, G. Angénieux, J. Piquet, F. de Crécy	2006	11
9	Extraction of (R,L,C,G) interconnect parameters in 2D transmission lines using fast and efficient numerical tools F. Charlet, C. Bermond, Sylvie Putot, G. Le Carval, B. Fléchet	2002	10
10	Characterization and optimization of a new Cu/SiN/TaN/Cu damascene architecture for metal–insulator–metal capacitors Microelectronic Engineering ·M. Thomas, J. Piquet, A. Farcy, C. Bermond, J. Torrès, T. Lacrevaz, B. Fléchet, N. Casanova, C. Perrot, P. Caubet, B. Chenevier	2005	9
11	Simulation and characterization of high-frequency performances of advanced MIM capacitors J. Piquet, O. Cueto, F. Charlet, M. Thomas, C. Bermond, A. Farcy, J. Torrès, B. Fléchet	2005	7
12	Characterization and modelling of Si-substrate noise induced by RF signal propagating in TSV of 3D-IC stack M. Brocard, Patrick Le Maître, C. Bermond, P. Bar, R. Anciant, A. Farcy, T. Lacrevaz, Philip R. LeDuc, P. Coudrain, N. Hotellier, Haykel Ben Jamaa, S. Chéramy, N. Sillon, J-C. Marin, B. Fléchet	2012	7
13	Extraction of equivalent high frequency models for TSV and RDL interconnects embedded in stacks of the 3D integration technology Ludovic Fourneaud, T. Lacrevaz, Jean Charbonnier, C. Fuchs, A. Farcy, C. Bermond, E. Eid, J. Roullard, B. Fléchet	2011	6
14	Reliable 3D Damascene MIM architecture embedded into Cu interconnect for a Ta<inf>2</inf>O<inf>5</inf> capacitor record density of 17 fF/¿m<sup>2</sup> M. Thomas, A. Farcy, C. Perrot, E. Deloffre, M. Gros‐Jean, Daniel L. Benoit, C. Richard, P. Caubet, S. Guillaumet, R. Pantel, M. Cordeau, J. Piquet, C. Bermond, B. Fléchet, B. Chenevier, J. Torrès	2007	5
15	A simple and systematic method for the design of tapered nonlinear transmission lines A. Jrad, Philippe Ferrari, C. Fuchs, A. Dominjon, Junwu Tao, B. Fléchet, G. Angénieux	2002	4
16	Impact of process parameters on circuit performance for the 32nm technology node Microelectronic Engineering ·A. Farcy, M. Gallitre, V. Arnal, Manuel Sellier, L. Guibe, B. Blampey, C. Bermond, B. Fléchet, J. Torrès	2007	4
17	Presentation of a new time domain simulation tool and application to the analysis of advanced interconnect performance dependence on design and process parameters A. Farcy, O. Cueto, B. Blampey, T. Lacrevaz, B. Fléchet, F. de Crécy, J. Torrès	2005	4
18	RF characterization of the substrate coupling noise between TSV and active devices in 3D integrated circuits Microelectronic Engineering ·C. Bermond, M. Brocard, T. Lacrevaz, A. Farcy, Patrick Le Maître, Philip R. LeDuc, Haykel Ben Jamaa, S. Chéramy, N. Sillon, B. Fléchet	2014	3
19	Characterization and modeling of RF substrate coupling effects in 3D integrated circuit stacking Microelectronic Engineering ·E. Eid, T. Lacrevaz, C. Bermond, S. Capraro, J. Roullard, B. Fléchet, L. Cadix, A. Farcy, P. Ancey, Françis Calmon, Olivier Valorge, Philip R. LeDuc	2010	3
20	Impact of Design on High-Frequency Performance of Advanced MIM Capacitors Using Si$_{3}$N$_{4}$ Dielectric Layers IEEE Transactions on Components and Packaging Technologies ·J. Piquet, C. Bermond, M. Thomas, A. Farcy, T. Lacrevaz, B. Blampey, J. Torrès, B. Fléchet, G. Angénieux	2008	3

About B. Fléchet

B. Fléchet is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry, Atomic and Molecular Physics, and Optics and Aerospace Engineering, having authored 43 papers that have together received 270 indexed citations. Recurring topics across this work include Copper Interconnects and Reliability (23 papers), Semiconductor materials and devices (22 papers), 3D IC and TSV technologies (20 papers), Electromagnetic Compatibility and Noise Suppression (12 papers), Electronic Packaging and Soldering Technologies (7 papers), Low-power high-performance VLSI design (5 papers), Microwave and Dielectric Measurement Techniques (5 papers) and Ferroelectric and Piezoelectric Materials (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (251 citations), Electronic, Optical and Magnetic Materials (60 citations), Materials Chemistry (56 citations), Acoustics and Ultrasonics (1 citation) and Hardware and Architecture (6 citations). B. Fléchet has collaborated with scholars based in France, Switzerland and United States. Frequent co-authors include C. Bermond, A. Farcy, T. Lacrevaz, Philippe Ferrari, M. Gros‐Jean, S. Blonkowski, T. Bertaud, C. Vallée, J. Torrès and Philip R. LeDuc. Their work appears in journals such as Microelectronic Engineering, IEEE Electron Device Letters, Applied Physics Letters, Electronics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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