B. Fléchet

557 total citations
43 papers, 270 citations indexed

About

B. Fléchet is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, B. Fléchet has authored 43 papers receiving a total of 270 indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Electrical and Electronic Engineering, 24 papers in Electronic, Optical and Magnetic Materials and 6 papers in Materials Chemistry. Recurrent topics in B. Fléchet's work include Copper Interconnects and Reliability (23 papers), Semiconductor materials and devices (22 papers) and 3D IC and TSV technologies (20 papers). B. Fléchet is often cited by papers focused on Copper Interconnects and Reliability (23 papers), Semiconductor materials and devices (22 papers) and 3D IC and TSV technologies (20 papers). B. Fléchet collaborates with scholars based in France, Switzerland and United States. B. Fléchet's co-authors include C. Bermond, A. Farcy, T. Lacrevaz, Philippe Ferrari, M. Gros‐Jean, J. Torrès, C. Vallée, T. Bertaud, S. Blonkowski and Philip R. LeDuc and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

B. Fléchet

40 papers receiving 261 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Fléchet France 10 251 60 56 32 14 43 270
C. Bermond France 8 191 0.8× 53 0.9× 62 1.1× 36 1.1× 15 1.1× 44 222
T. Lacrevaz France 7 145 0.6× 37 0.6× 36 0.6× 33 1.0× 7 0.5× 37 172
Jong‐Min Yook South Korea 13 387 1.5× 20 0.3× 27 0.5× 43 1.3× 33 2.4× 53 410
Ki-Hyun Yoon South Korea 8 340 1.4× 39 0.7× 80 1.4× 28 0.9× 17 1.2× 12 367
C. Perrot France 8 159 0.6× 18 0.3× 45 0.8× 38 1.2× 9 0.6× 15 188
J. Li United States 10 218 0.9× 30 0.5× 42 0.8× 42 1.3× 14 1.0× 29 245
S. Jenei Belgium 10 468 1.9× 28 0.5× 14 0.3× 94 2.9× 25 1.8× 28 479
Xiaorui Xu China 10 247 1.0× 63 1.1× 42 0.8× 6 0.2× 33 2.4× 39 299
Juergen Boemmels Belgium 7 316 1.3× 46 0.8× 36 0.6× 54 1.7× 17 1.2× 28 351
Y. Kamigaki Japan 9 355 1.4× 19 0.3× 95 1.7× 27 0.8× 32 2.3× 18 370

Countries citing papers authored by B. Fléchet

Since Specialization
Citations

This map shows the geographic impact of B. Fléchet's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Fléchet with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Fléchet more than expected).

Fields of papers citing papers by B. Fléchet

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Fléchet. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Fléchet. The network helps show where B. Fléchet may publish in the future.

Co-authorship network of co-authors of B. Fléchet

This figure shows the co-authorship network connecting the top 25 collaborators of B. Fléchet. A scholar is included among the top collaborators of B. Fléchet based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Fléchet. B. Fléchet is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lacrevaz, T., A. Farcy, Philip R. LeDuc, et al.. (2014). RF characterization of the substrate coupling noise between TSV and active devices in 3D integrated circuits. Microelectronic Engineering. 130. 74–81. 3 indexed citations
2.
Quéffélec, Patrick, Alexis Chevalier, Jean-Michel Le Floch, et al.. (2014). Intercomparison of permittivity measurement techniques for ferroelectric thin layers. Journal of Applied Physics. 115(2). 17 indexed citations
3.
Rivaz, S. de, A. Farcy, D. Deschacht, T. Lacrevaz, & B. Fléchet. (2010). Effective interconnect networks design in CMOS 45 nm circuits to joint reductions of XT and delay for transmission of very high speed signals. 1–4. 2 indexed citations
4.
Lacrevaz, T., et al.. (2010). Innovative HF extraction procedure of the characteristic impedance for embedded planar transmission line on high conductive Si substrate. 606–609. 1 indexed citations
5.
Defaÿ, Emmanuel, T. Lacrevaz, Trinh Vo, et al.. (2009). Ferroelectric properties of Pb(Zr,Ti)O3 thin films until 40 GHz. Applied Physics Letters. 94(5). 19 indexed citations
6.
Blampey, B., A. Farcy, T. Lacrevaz, et al.. (2009). Microwave characterization of porous SiOCH permittivity after integration dedicated to the 32nm node. Microelectronic Engineering. 87(3). 329–332. 1 indexed citations
7.
Rivaz, S. de, T. Lacrevaz, A. Farcy, et al.. (2008). Dielectric Loss Effects on the Modeling of Interconnect Responses for the 45 nm Node. 1–4. 1 indexed citations
8.
9.
Farcy, A., V. Arnal, B. Blampey, et al.. (2007). Impact of process parameters on circuit performance for the 32nm technology node. Microelectronic Engineering. 84(11). 2738–2743. 4 indexed citations
10.
Lacrevaz, T., B. Fléchet, A. Farcy, et al.. (2006). Wide band frequency and in situ characterisation of high permittivity insulators (High-K) for H.F. integrated passives. Microelectronic Engineering. 83(11-12). 2184–2188. 11 indexed citations
11.
Lacrevaz, T., B. Fléchet, A. Farcy, et al.. (2006). Wide Band Frequency Characterization of High Permittivity Dielectrics (High-K) for RF MIM Capacitors Integrated in BEOL. 78–80. 1 indexed citations
12.
Bermond, C., B. Fléchet, A. Farcy, et al.. (2006). High frequencies characterization of Cu-MIM capacitors in parallel configuration for advanced integrated circuits. Microelectronic Engineering. 83(11-12). 2341–2345. 1 indexed citations
13.
14.
Farcy, A., C. Bermond, J. Torrès, et al.. (2005). Characterization and optimization of a new Cu/SiN/TaN/Cu damascene architecture for metal–insulator–metal capacitors. Microelectronic Engineering. 82(3-4). 521–528. 9 indexed citations
15.
Bermond, C., A. Farcy, T. Lacrevaz, et al.. (2005). Impact of Design on High Frequency Performances of Advanced MIM Capacitors Using SiN Dielectric Layers. IEEE MTT-S International Microwave Symposium Digest, 2005.. 24. 291–294. 2 indexed citations
16.
Blampey, B., et al.. (2004). Impact of copper dummies on interconnect propagation performance in advanced integrated circuits. Microelectronic Engineering. 76(1-4). 119–125. 1 indexed citations
17.
Ferrari, Philippe, et al.. (2002). A simple and systematic method for the design of tapered nonlinear transmission lines. 3. 1627–1630. 4 indexed citations
18.
19.
Bermond, C., et al.. (2000). Performance Characterization of Advanced Interconnects on High Speed VLSI Circuits. 216–219. 1 indexed citations
20.
Ferrari, Philippe, et al.. (1994). Time domain characterization of lossy arbitrary characteristic impedance transmission lines. IEEE Microwave and Guided Wave Letters. 4(6). 177–179. 27 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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