C. Bermond

534 citations

44 papers · 222 indexed · h-index 8

Impact in

Electrical and Electronic Engineering
- Semiconductor materials and devices
- 3D IC and TSV technologies
- Ferroelectric and Negative Capacitance Devices
- Electromagnetic Compatibility and Noise Suppression
- Advancements in Semiconductor Devices and Circuit Design
- Electronic Packaging and Soldering Technologies
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability

Papers in ⓘ

Electrical and Electronic Engineering 40
- Semiconductor materials and devices 20
- 3D IC and TSV technologies 18
- Electromagnetic Compatibility and Noise Suppression 12
- Electronic Packaging and Soldering Technologies 6
- Low-power high-performance VLSI design 5
- Microwave and Dielectric Measurement Techniques 4
Electronic, Optical and Magnetic Materials 21
- Copper Interconnects and Reliability 20

Co-authors: B. Fléchet (33 shared papers)T. Lacrevaz (24 shared papers)A. Farcy (29 shared papers)T. Bertaud (5 shared papers)M. Gros‐Jean (5 shared papers)S. Blonkowski (2 shared papers)C. Vallée (2 shared papers)J. Torrès (17 shared papers)
Journals: Microelectronic Engineering (12 papers)IEEE Transactions on Components Packaging and Manufacturing Technology (2 papers)IEEE Electron Device Letters (1 paper)IEEE Antennas and Wireless Propagation Letters (1 paper)Applied Physics Letters (1 paper)
Partner nations: France Switzerland United States

In The Last Decade

C. Bermond

40 papers receiving 213 citations

Peers

Countries citing papers authored by C. Bermond

Since Specialization

Citations

This map shows the geographic impact of C. Bermond's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Bermond with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Bermond more than expected).

Fields of papers citing papers by C. Bermond

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Bermond. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Bermond. The network helps show where C. Bermond may publish in the future.

Co-authors

The 25 scholars most cited alongside C. Bermond, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. Bermond Line = papers co-authored together C. Bermond links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 44 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Frequency Effect on Voltage Linearity of $ \hbox{ZrO}_{2}$-Based RF Metal–Insulator–Metal Capacitors IEEE Electron Device Letters ·T. Bertaud, S. Blonkowski, C. Bermond, C. Vallée, P. Gonon, M. Gros‐Jean, B. Fléchet	2010	29
2	Ferroelectric properties of Pb(Zr,Ti)O3 thin films until 40 GHz Applied Physics Letters ·Emmanuel Defaÿ, T. Lacrevaz, Trinh Vo, V. Sbrugnera, C. Bermond, M. Aïd, B. Fléchet	2009	19
3	RF characterization and modelling of high density Through Silicon Vias for 3D chip stacking Microelectronic Engineering ·L. Cadix, C. Bermond, C. Fuchs, A. Farcy, Philip R. LeDuc, L. DiCioccio, M. Assous, Maxime Rousseau, F. Lorut, Laurent Chapelon, B. Fléchet, N. Sillon, P. Ancey	2009	19
4	Intercomparison of permittivity measurement techniques for ferroelectric thin layers Journal of Applied Physics ·Patrick Quéffélec, Vincent Laur, Alexis Chevalier, Jean-Michel Le Floch, Damien Passerieux, D. Cros, Valérie Madrangeas, Arnaud le Febvrier, Stéphanie Députier, Maryline Guilloux‐Viry, Grégory Houzet, T. Lacrevaz, C. Bermond, B. Fléchet	2014	17
5	Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors Microelectronic Engineering ·T. Bertaud, C. Bermond, T. Lacrevaz, C. Vallée, Y. Morand, B. Fléchet, A. Farcy, M. Gros‐Jean, S. Blonkowski	2009	17
6	Wide band frequency and in situ characterisation of high permittivity insulators (High-K) for H.F. integrated passives Microelectronic Engineering ·T. Lacrevaz, B. Fléchet, A. Farcy, J. Torrès, M. Gros‐Jean, C. Bermond, Trinh Vo, O. Cueto, B. Blampey, G. Angénieux, J. Piquet, F. de Crécy	2006	11
7	Extraction of (R,L,C,G) interconnect parameters in 2D transmission lines using fast and efficient numerical tools F. Charlet, C. Bermond, Sylvie Putot, G. Le Carval, B. Fléchet	2002	10
8	Characterization and optimization of a new Cu/SiN/TaN/Cu damascene architecture for metal–insulator–metal capacitors Microelectronic Engineering ·M. Thomas, J. Piquet, A. Farcy, C. Bermond, J. Torrès, T. Lacrevaz, B. Fléchet, N. Casanova, C. Perrot, P. Caubet, B. Chenevier	2005	9
9	Simulation and characterization of high-frequency performances of advanced MIM capacitors J. Piquet, O. Cueto, F. Charlet, M. Thomas, C. Bermond, A. Farcy, J. Torrès, B. Fléchet	2005	7
10	Effect of water content on microwave dielectric properties of building materials Construction and Building Materials ·Romain Damez, Philippe Artillan, Arthur Hellouin de Ménibus, C. Bermond, Pascal Xavier	2020	7
11	Characterization and modelling of Si-substrate noise induced by RF signal propagating in TSV of 3D-IC stack M. Brocard, Patrick Le Maître, C. Bermond, P. Bar, R. Anciant, A. Farcy, T. Lacrevaz, Philip R. LeDuc, P. Coudrain, N. Hotellier, Haykel Ben Jamaa, S. Chéramy, N. Sillon, J-C. Marin, B. Fléchet	2012	7
12	Extraction of equivalent high frequency models for TSV and RDL interconnects embedded in stacks of the 3D integration technology Ludovic Fourneaud, T. Lacrevaz, Jean Charbonnier, C. Fuchs, A. Farcy, C. Bermond, E. Eid, J. Roullard, B. Fléchet	2011	6
13	Modeling and Frequency Performance Analysis of Through Silicon Capacitors in Silicon Interposers IEEE Transactions on Components Packaging and Manufacturing Technology ·Khadim Dieng, Philippe Artillan, C. Bermond, Olivier Guiller, T. Lacrevaz, Sylvain Joblot, Grégory Houzet, A. Farcy, Anne‐Laure Perrier, Yann Lamy, Bernard Fléchet	2017	5
14	Lateral Field Excitation of membrane-based Aluminum Nitride resonators M. Gorisse, Alexandre Reinhardt, C. Billard, Michel Borel, Emmanuel Defaÿ, T. Bertaud, T. Lacrevaz, C. Bermond	2011	5
15	Reliable 3D Damascene MIM architecture embedded into Cu interconnect for a Ta<inf>2</inf>O<inf>5</inf> capacitor record density of 17 fF/¿m<sup>2</sup> M. Thomas, A. Farcy, C. Perrot, E. Deloffre, M. Gros‐Jean, Daniel L. Benoit, C. Richard, P. Caubet, S. Guillaumet, R. Pantel, M. Cordeau, J. Piquet, C. Bermond, B. Fléchet, B. Chenevier, J. Torrès	2007	5
16	In-situ characterization up to 100 GHz of insulators used in new 3D “System in Package on board” (SiPoB) technologies Microelectronics Journal ·Grégory Houzet, T. Lacrevaz, C. Bermond, Philippe Artillan, David Auchère, Laurent Schwarz, Bernard Fléchet	2021	5
17	In situ microwave characterisation of medium- k HfO ₂ and high- k SrTiO ₃ dielectrics for metal–insulator–metal capacitors integrated in back-end of line of integrated circuits IET Microwaves Antennas & Propagation ·Trinh Vo, T. Lacrevaz, C. Bermond, T. Bertaud, Bernard Fléchet, A. Farcy, Y. Morand, S. Blonkowski, J. Torrès, B. Guigues, Emmanuel Defaÿ	2008	5
18	20 GHz Antenna Radiation Pattern Obtained From Near-Field Mapping With Electrooptic Probe on a Single Plane IEEE Antennas and Wireless Propagation Letters ·Gwenaël Gaborit, Philippe Artillan, C. Bermond, Guillaume Revillod, Guillaume Chevrier-Gros, Lionel Duvillaret	2020	5
19	Impact of process parameters on circuit performance for the 32nm technology node Microelectronic Engineering ·A. Farcy, M. Gallitre, V. Arnal, Manuel Sellier, L. Guibe, B. Blampey, C. Bermond, B. Fléchet, J. Torrès	2007	4
20	Electrical Broadband Characterization Method of Dielectric Molding in 3-D IC and Results IEEE Transactions on Components Packaging and Manufacturing Technology ·T. Lacrevaz, C. Bermond, O. El Bouayadi, Grégory Houzet, Philippe Artillan, Yann Lamy, Khadim Dieng, Bernard Fléchet	2014	3

About C. Bermond

C. Bermond is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry, Biomedical Engineering and Atomic and Molecular Physics, and Optics, having authored 44 papers that have together received 222 indexed citations. Recurring topics across this work include Copper Interconnects and Reliability (20 papers), Semiconductor materials and devices (20 papers), 3D IC and TSV technologies (18 papers), Electromagnetic Compatibility and Noise Suppression (12 papers), Electronic Packaging and Soldering Technologies (6 papers), Low-power high-performance VLSI design (5 papers), Ferroelectric and Piezoelectric Materials (5 papers) and Microwave and Dielectric Measurement Techniques (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (191 citations), Electronic, Optical and Magnetic Materials (53 citations), Materials Chemistry (62 citations), Acoustics and Ultrasonics (1 citation) and Biomedical Engineering (36 citations). C. Bermond has collaborated with scholars based in France, Switzerland and United States. Frequent co-authors include B. Fléchet, T. Lacrevaz, A. Farcy, T. Bertaud, M. Gros‐Jean, S. Blonkowski, C. Vallée, J. Torrès, Trinh Vo and Emmanuel Defaÿ. Their work appears in journals such as Microelectronic Engineering, IEEE Transactions on Components Packaging and Manufacturing Technology, IEEE Electron Device Letters, IEEE Antennas and Wireless Propagation Letters and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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