X. Li

573 total citations
19 papers, 411 citations indexed

About

X. Li is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, X. Li has authored 19 papers receiving a total of 411 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 3 papers in Materials Chemistry and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in X. Li's work include Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Advanced Memory and Neural Computing (6 papers). X. Li is often cited by papers focused on Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Advanced Memory and Neural Computing (6 papers). X. Li collaborates with scholars based in Singapore, China and United States. X. Li's co-authors include Navab Singh, K. L. Pey, Zheng Fang, Dim‐Lee Kwong, Jinfeng Kang, N. Shen, Bin Gao, Zhixian Chen, D. L. Kwong and Yang Lu and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Advanced materials research.

In The Last Decade

X. Li

17 papers receiving 397 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
X. Li Singapore 10 399 47 46 32 28 19 411
Zia Karim United States 5 286 0.7× 55 1.2× 66 1.4× 36 1.1× 18 0.6× 23 304
A. V-Y. Thean Belgium 10 356 0.9× 100 2.1× 45 1.0× 69 2.2× 22 0.8× 17 388
Shunichi Kaeriyama Japan 12 434 1.1× 42 0.9× 63 1.4× 61 1.9× 37 1.3× 18 441
S. Jeannot France 11 307 0.8× 80 1.7× 53 1.2× 14 0.4× 47 1.7× 29 320
P. Candelier France 12 323 0.8× 46 1.0× 27 0.6× 9 0.3× 12 0.4× 29 337
Yi-Ming Tseng Taiwan 5 313 0.8× 58 1.2× 73 1.6× 35 1.1× 72 2.6× 12 368
Md. Hasan Raza Ansari Saudi Arabia 11 267 0.7× 65 1.4× 42 0.9× 30 0.9× 15 0.5× 33 312
John Niroula United States 12 349 0.9× 35 0.7× 46 1.0× 16 0.5× 31 1.1× 23 378
K.G. McCarthy Ireland 10 318 0.8× 29 0.6× 60 1.3× 147 4.6× 18 0.6× 74 443
Kensuke Ota Japan 10 387 1.0× 113 2.4× 34 0.7× 41 1.3× 16 0.6× 34 403

Countries citing papers authored by X. Li

Since Specialization
Citations

This map shows the geographic impact of X. Li's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by X. Li with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites X. Li more than expected).

Fields of papers citing papers by X. Li

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by X. Li. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by X. Li. The network helps show where X. Li may publish in the future.

Co-authorship network of co-authors of X. Li

This figure shows the co-authorship network connecting the top 25 collaborators of X. Li. A scholar is included among the top collaborators of X. Li based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with X. Li. X. Li is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
2.
3.
Li, X., et al.. (2015). Recent Development and Application of Polymers in Concrete Technology in Singapore. Advanced materials research. 1129. 102–112. 1 indexed citations
4.
Fang, Zheng, et al.. (2013). Fully CMOS-Compatible 1T1R Integration of Vertical Nanopillar GAA Transistor and Oxide-Based RRAM Cell for High-Density Nonvolatile Memory Application. IEEE Transactions on Electron Devices. 60(3). 1108–1113. 24 indexed citations
6.
Fang, Zheng, Hongya Yu, J. A. Chroboczek, et al.. (2012). Low-Frequency Noise in Oxide-Based $(\hbox{TiN}/ \hbox{HfO}_{x}/\hbox{Pt})$ Resistive Random Access Memory Cells. IEEE Transactions on Electron Devices. 59(3). 850–853. 26 indexed citations
7.
Maly, W., Navab Singh, Zhenghua Chen, et al.. (2011). Twin gate, vertical slit FET (VeSFET) for highly periodic layout and 3D integration. International Conference Mixed Design of Integrated Circuits and Systems. 145–150. 52 indexed citations
8.
Kwong, D. L., X. Li, Yi Sun, et al.. (2011). Vertical Silicon Nanowire Platform for Low Power Electronics and Clean Energy Applications. Journal of Nanotechnology. 2012. 1–21. 33 indexed citations
9.
Lu, Yang, Bin Gao, Peng Huang, et al.. (2011). Physical mechanisms of endurance degradation in TMO-RRAM. 12.3.1–12.3.4. 136 indexed citations
12.
Bosman, Michel, Changqing Cheng, X. Li, et al.. (2010). The distribution of chemical elements in Al- or La-capped high-κ metal gate stacks. Applied Physics Letters. 97(10). 20 indexed citations
13.
Pey, K. L., Nagarajan Raghavan, X. Li, et al.. (2010). New insight into the TDDB and breakdown reliability of novel high-к gate dielectric stacks. 354–363. 8 indexed citations
14.
Fang, Zheng, H.Y. Yu, K. L. Pey, et al.. (2010). Bias temperature instability of binary oxide based ReRAM. 90. 964–965. 5 indexed citations
15.
Raghavan, Nagarajan, et al.. (2009). Post breakdown reliability enhancement of ULSI circuits with novel gate dielectric stacks. 505–513. 4 indexed citations
17.
Pey, K. L., et al.. (2009). Observation of switching behaviors in post-breakdown conduction in NiSi-gated stacks. 1–4. 13 indexed citations
18.
Li, X., et al.. (2008). The chemistry of gate dielectric breakdown. 107. 1–4. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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