Hangfeng Ji

868 total citations
12 papers, 715 citations indexed

About

Hangfeng Ji is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Hangfeng Ji has authored 12 papers receiving a total of 715 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Condensed Matter Physics, 8 papers in Electrical and Electronic Engineering and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Hangfeng Ji's work include GaN-based semiconductor devices and materials (12 papers), Silicon Carbide Semiconductor Technologies (7 papers) and Semiconductor Quantum Structures and Devices (4 papers). Hangfeng Ji is often cited by papers focused on GaN-based semiconductor devices and materials (12 papers), Silicon Carbide Semiconductor Technologies (7 papers) and Semiconductor Quantum Structures and Devices (4 papers). Hangfeng Ji collaborates with scholars based in United Kingdom, Belgium and United States. Hangfeng Ji's co-authors include Martin Kuball, Andrei Sarua, Michael J. Uren, T. Martin, K.P. Hilton, R.S. Balmer, D. J. Wallis, J. Das, Marianne Germain and G. Borghs and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Nanotechnology.

In The Last Decade

Hangfeng Ji

12 papers receiving 695 citations

Peers

Hangfeng Ji

CMP

EEE

MC

AMPO

EOMM

M. Alomari Germany

B.T. Hughes United Kingdom

Makoto Kiyama Japan

J. Anaya United Kingdom

D. Tsvetkov United States

J.M. Li China

Yuri Makarov Russia

Anindya Nath United States

K. Hazu Japan

J. Senawiratne United States

M. Alomari Germany

Hangfeng Ji

627 ×1.1

CMP

547 ×1.2

EEE

333 ×1.0

MC

128 ×1.0

AMPO

243 ×2.3

EOMM

Citations per year, relative to Hangfeng Ji Hangfeng Ji (= 1×) peers M. Alomari

Countries citing papers authored by Hangfeng Ji

Since Specialization

Citations

This map shows the geographic impact of Hangfeng Ji's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hangfeng Ji with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hangfeng Ji more than expected).

Fields of papers citing papers by Hangfeng Ji

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hangfeng Ji. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hangfeng Ji. The network helps show where Hangfeng Ji may publish in the future.

Co-authorship network of co-authors of Hangfeng Ji

This figure shows the co-authorship network connecting the top 25 collaborators of Hangfeng Ji. A scholar is included among the top collaborators of Hangfeng Ji based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hangfeng Ji. Hangfeng Ji is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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12 of 12 papers shown

1.

Sarua, Andrei, Hangfeng Ji, James W. Pomeroy, et al.. (2010). Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors studied by Raman scattering. Semiconductor Science and Technology. 25(8). 85004–85004. 12 indexed citations

2.

Ji, Hangfeng, J. Das, Marianne Germain, & Martin Kuball. (2009). Laser lift-off transfer of AlGaN/GaN HEMTs from sapphire onto Si: A thermal perspective. Solid-State Electronics. 53(5). 526–529. 16 indexed citations

3.

Sarua, Andrei, Hangfeng Ji, K.P. Hilton, et al.. (2007). Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices. IEEE Transactions on Electron Devices. 54(12). 3152–3158. 236 indexed citations

4.

Kuball, Martin, James W. Pomeroy, R. Simms, et al.. (2007). Thermal Properties and Reliability of GaN Microelectronics: Sub-Micron Spatial and Nanosecond Time Resolution Thermography. 1–4. 18 indexed citations

5.

Ji, Hangfeng, Martin Kuball, Robert A. Burke, & Joan M. Redwing. (2007). Vibrational and optical properties of GaN nanowires synthesized by Ni-assisted catalytic growth. Nanotechnology. 18(44). 445704–445704. 21 indexed citations

6.

Sarua, Andrei, Hangfeng Ji, Martin Kuball, et al.. (2006). Combined Infrared and Raman temperature measurements on device structures. Bristol Research (University of Bristol). 179–182. 5 indexed citations

7.

Ji, Hangfeng, Martin Kuball, Andrei Sarua, et al.. (2006). Three-dimensional thermal analysis of a flip-chip mounted AlGaN/GaN HFET using confocal micro-Raman spectroscopy. IEEE Transactions on Electron Devices. 53(10). 2658–2661. 22 indexed citations

8.

Sarua, Andrei, Hangfeng Ji, Martin Kuball, et al.. (2006). Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures. IEEE Transactions on Electron Devices. 53(10). 2438–2447. 218 indexed citations

9.

Kuball, Martin, Andrei Sarua, Hangfeng Ji, et al.. (2006). Integrated Raman - IR Thermography on AlGaN/GaN Transistors. 1339–1342. 18 indexed citations

10.

Das, J., Herman Oprins, Hangfeng Ji, et al.. (2006). Improved Thermal Performance of AlGaN/GaN HEMTs by an Optimized Flip-Chip Design. IEEE Transactions on Electron Devices. 53(11). 2696–2702. 61 indexed citations

11.

Sarua, Andrei, Hangfeng Ji, Martin Kuball, et al.. (2006). Piezoelectric strain in AlGaN∕GaN heterostructure field-effect transistors under bias. Applied Physics Letters. 88(10). 85 indexed citations

12.

Ji, Hangfeng, Andrei Sarua, Martin Kuball, et al.. (2005). Flip Chip Mounting for Improved Thermal Management of AlGaN/GaN HFETs. MRS Proceedings. 892. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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