J.M. Li

601 total citations
33 papers, 510 citations indexed

About

J.M. Li is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, J.M. Li has authored 33 papers receiving a total of 510 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 14 papers in Materials Chemistry and 13 papers in Condensed Matter Physics. Recurrent topics in J.M. Li's work include GaN-based semiconductor devices and materials (13 papers), Ga2O3 and related materials (9 papers) and Semiconductor Quantum Structures and Devices (7 papers). J.M. Li is often cited by papers focused on GaN-based semiconductor devices and materials (13 papers), Ga2O3 and related materials (9 papers) and Semiconductor Quantum Structures and Devices (7 papers). J.M. Li collaborates with scholars based in China, United States and Singapore. J.M. Li's co-authors include Y.P. Zeng, Junpeng Wang, Xingli Wang, Jian Zhang, Di Li, Chunjun Song, Xiaoying Qin, Le Wang, Tongbo Wei and Bin Xiong and has published in prestigious journals such as Applied Surface Science, Journal of Alloys and Compounds and Journal of Crystal Growth.

In The Last Decade

J.M. Li

32 papers receiving 489 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J.M. Li China	15	308	239	221	184	109	33	510
Thomas Gessmann United States	10	247 0.8×	203 0.8×	150 0.7×	273 1.5×	96 0.9×	14	482
Hangfeng Ji United Kingdom	10	475 1.5×	325 1.4×	132 0.6×	563 3.1×	107 1.0×	12	715
J. Senawiratne United States	9	151 0.5×	328 1.4×	110 0.5×	175 1.0×	108 1.0×	25	446
M. F. MacMillan United States	16	672 2.2×	182 0.8×	232 1.0×	155 0.8×	181 1.7×	50	813
Hoon Jeong South Korea	13	326 1.1×	143 0.6×	168 0.8×	85 0.5×	48 0.4×	63	455
A. Escobosa Mexico	13	258 0.8×	241 1.0×	172 0.8×	139 0.8×	91 0.8×	59	432
Yuri Makarov Russia	11	325 1.1×	205 0.9×	121 0.5×	304 1.7×	174 1.6×	55	616
Q. Huang China	11	171 0.6×	160 0.7×	133 0.6×	55 0.3×	42 0.4×	36	331
P. Kruszewski Poland	12	324 1.1×	264 1.1×	105 0.5×	214 1.2×	163 1.5×	47	480
M. H. Hsieh Taiwan	9	169 0.5×	237 1.0×	143 0.6×	360 2.0×	132 1.2×	15	446

Countries citing papers authored by J.M. Li

Since Specialization

Citations

This map shows the geographic impact of J.M. Li's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.M. Li with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.M. Li more than expected).

Fields of papers citing papers by J.M. Li

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.M. Li. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.M. Li. The network helps show where J.M. Li may publish in the future.

Co-authorship network of co-authors of J.M. Li

This figure shows the co-authorship network connecting the top 25 collaborators of J.M. Li. A scholar is included among the top collaborators of J.M. Li based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.M. Li. J.M. Li is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Li, J.M., Hongwei Ming, Chunjun Song, et al.. (2020). Synergetic modulation of power factor and thermal conductivity for Cu3SbSe4-based system. Materials Today Energy. 18. 100491–100491. 25 indexed citations

Li, J.M., Di Li, Chunjun Song, et al.. (2019). Realized high power factor and thermoelectric performance in Cu3SbSe4. Intermetallics. 109. 68–73. 25 indexed citations

Huang, Lulu, Chen Zhu, Rui Xu, et al.. (2018). Preparation and enhanced thermoelectric performance of Pb-doped tetrahedrite Cu12-xPbxSb4S13. Journal of Alloys and Compounds. 769. 478–483. 23 indexed citations

Huang, Lulu, Jian Zhang, Ziming Wang, et al.. (2018). High thermoelectric performance of tetrahedrites through InSb inclusion. Materialia. 3. 169–173. 12 indexed citations

Zhang, Ning, Ruiqing Pan, Xuelin Zhang, et al.. (2018). QTL for sensitivity of seedling height to exogenous GA₃and their effects on adult plant height in common wheat. Cereal Research Communications. 46(3). 412–423. 2 indexed citations

Yuan, G. D., Zhi‐Quan Liu, Tongbo Wei, et al.. (2016). GaN nanowire arrays by a patterned metal-assisted chemical etching. Journal of Crystal Growth. 440. 96–101. 16 indexed citations

Tang, Jau, et al.. (2011). Semiconductor type single wall carbon nanotube absorber for passive mode-locked Nd:YVO4 laser. Optik. 123(14). 1279–1281. 4 indexed citations

Sun, Liqun, Lei Zhang, Huanghe Yu, et al.. (2010). 880 nm LD pumped passive mode-locked TEM00 Nd:YVO4 laser based on SESAM. Laser Physics Letters. 7(10). 711–714. 50 indexed citations

Wei, Tongbo, et al.. (2010). Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching. Journal of Crystal Growth. 314(1). 141–145. 14 indexed citations

10.

Liang, Hui, Y. Z. Wan, Fang He, et al.. (2006). Bioactivity of Mg-ion-implanted zirconia and titanium. Applied Surface Science. 253(6). 3326–3333. 28 indexed citations

11.

Wang, Xingli, et al.. (2005). Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates. Solid-State Electronics. 49(8). 1387–1390. 58 indexed citations

12.

Luo, Min, J.M. Li, Q.M. Wang, et al.. (2003). Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitridation. Journal of Crystal Growth. 249(1-2). 1–8. 10 indexed citations

13.

Dong, Hongwei, et al.. (2003). Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy. Journal of Crystal Growth. 250(3-4). 364–369. 4 indexed citations

14.

Luo, Min, Xingli Wang, J.M. Li, et al.. (2002). Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE. Journal of Crystal Growth. 244(3-4). 229–235. 9 indexed citations

15.

Gao, Fang, et al.. (2001). Changing the size and shape of Ge island by chemical etching. Journal of Crystal Growth. 231(1-2). 17–21. 5 indexed citations

16.

Gao, Fu‐Ping, et al.. (2001). Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy. Journal of Crystal Growth. 223(4). 489–493.

17.

Zhuang, Qiandong, et al.. (2001). Structural, optical and intraband absorption properties of vertically aligned In0.32Ga0.68As/GaAs quantum dots superlattices. Physica E Low-dimensional Systems and Nanostructures. 11(4). 384–390. 1 indexed citations

18.

Gao, Feng, et al.. (2000). Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy. Journal of Crystal Growth. 220(4). 461–465. 8 indexed citations

19.

Pan, Dong, et al.. (1996). Normal incident infrared absorption from InGaAs/GaAsquantum dot superlattice. Electronics Letters. 32(18). 1726–1727. 50 indexed citations

20.

Li, J.M., et al.. (1992). New type of silicon material with very high quality surface layer on insulating defect layer. Electronics Letters. 28(7). 652–653. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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