Makoto Kiyama

827 total citations
24 papers, 693 citations indexed

About

Makoto Kiyama is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Makoto Kiyama has authored 24 papers receiving a total of 693 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 9 papers in Condensed Matter Physics and 9 papers in Materials Chemistry. Recurrent topics in Makoto Kiyama's work include Semiconductor materials and devices (10 papers), GaN-based semiconductor devices and materials (9 papers) and Advanced Thermoelectric Materials and Devices (6 papers). Makoto Kiyama is often cited by papers focused on Semiconductor materials and devices (10 papers), GaN-based semiconductor devices and materials (9 papers) and Advanced Thermoelectric Materials and Devices (6 papers). Makoto Kiyama collaborates with scholars based in Japan, United States and Germany. Makoto Kiyama's co-authors include Yusuke Yoshizumi, Masaya Okada, Takao Nakamura, Masaki Ueno, Koji Katayama, Y. Saitoh, Taku Horii, Shin Hashimoto, Kazuhide Sumiyoshi and Hiromu Shiomi and has published in prestigious journals such as Nature Communications, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Makoto Kiyama

23 papers receiving 669 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Makoto Kiyama Japan 11 473 461 286 263 135 24 693
J.M. Li China 15 308 0.7× 184 0.4× 109 0.4× 239 0.9× 221 1.6× 33 510
J. Senawiratne United States 9 151 0.3× 175 0.4× 108 0.4× 328 1.2× 110 0.8× 25 446
Kamal Hussain United States 12 279 0.6× 307 0.7× 208 0.7× 137 0.5× 99 0.7× 48 463
D. Tsvetkov United States 16 376 0.8× 577 1.3× 274 1.0× 275 1.0× 210 1.6× 54 778
B.T. Hughes United Kingdom 8 439 0.9× 490 1.1× 80 0.3× 203 0.8× 189 1.4× 16 607
Duo Cao China 12 360 0.8× 91 0.2× 181 0.6× 199 0.8× 99 0.7× 52 544
Shaowen Han China 12 530 1.1× 611 1.3× 290 1.0× 118 0.4× 146 1.1× 19 704
M. Alomari Germany 14 547 1.2× 627 1.4× 243 0.8× 333 1.3× 128 0.9× 44 867
Hangfeng Ji United Kingdom 10 475 1.0× 563 1.2× 107 0.4× 325 1.2× 132 1.0× 12 715
Akio Wakejima Japan 18 676 1.4× 585 1.3× 227 0.8× 181 0.7× 301 2.2× 84 855

Countries citing papers authored by Makoto Kiyama

Since Specialization
Citations

This map shows the geographic impact of Makoto Kiyama's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Makoto Kiyama with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Makoto Kiyama more than expected).

Fields of papers citing papers by Makoto Kiyama

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Makoto Kiyama. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Makoto Kiyama. The network helps show where Makoto Kiyama may publish in the future.

Co-authorship network of co-authors of Makoto Kiyama

This figure shows the co-authorship network connecting the top 25 collaborators of Makoto Kiyama. A scholar is included among the top collaborators of Makoto Kiyama based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Makoto Kiyama. Makoto Kiyama is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Adachi, Masahiro, et al.. (2020). High Dimensionless Figure of Merit <i>ZT</i> = 1.38 Achieved in p-Type Si–Ge–Au–B Thin Film. MATERIALS TRANSACTIONS. 61(5). 1014–1019. 3 indexed citations
2.
Byeon, Dogyun, Seongho Choi, Keisuke Hirata, et al.. (2019). Discovery of colossal Seebeck effect in metallic Cu2Se. Nature Communications. 10(1). 72–72. 135 indexed citations
3.
Adachi, Masahiro, Makoto Kiyama, Takashi Matsuura, et al.. (2019). Large figure of merit ZT = 1.88 at 873 K achieved with nanostructured Si0.55Ge0.35(P0.10Fe0.01). Applied Physics Express. 12(4). 45507–45507. 23 indexed citations
4.
Adachi, Masahiro, Shunsuke Fujii, Makoto Kiyama, et al.. (2018). Development of amorphous bulk Al-Mn-Si for nano-structured thermoelectric materials. Materials Today Proceedings. 5(4). 10291–10297. 1 indexed citations
5.
Inukai, M., et al.. (2017). Thermoelectric Properties of Nanograined Si-Ge-Au Thin Films Grown by Molecular Beam Deposition. Journal of Electronic Materials. 47(6). 3267–3272. 11 indexed citations
6.
Adachi, Masahiro, Shunsuke Fujii, Makoto Kiyama, et al.. (2016). Control of nano structure by multi films for nano-structured thermoelectric materials. The Japan Society of Applied Physics. 1 indexed citations
7.
Ueno, Masaki, Susumu Yoshimoto, K. Ishihara, et al.. (2014). Fast recovery performance of vertical GaN Schottky barrier diodes on low-dislocation-density GaN substrates. 309–312. 20 indexed citations
8.
Saitoh, Y., Kazuhide Sumiyoshi, Masaya Okada, et al.. (2010). Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates. Applied Physics Express. 3(8). 81001–81001. 221 indexed citations
9.
Okada, Masaya, Y. Saitoh, Koji Katayama, et al.. (2010). Novel Vertical Heterojunction Field-Effect Transistors with Re-grown AlGaN/GaN Two-Dimensional Electron Gas Channels on GaN Substrates. Applied Physics Express. 3(5). 54201–54201. 54 indexed citations
10.
Okada, Masaya, et al.. (2010). Vertical heterojunction field‐effect transistors utilizing re‐grown AlGaN/GaN two‐dimensional electron gas channels on GaN substrates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(2). 450–452. 13 indexed citations
11.
Horii, Taku, et al.. (2009). High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure. Materials science forum. 615-617. 963–966. 20 indexed citations
12.
Yoshizumi, Yusuke, et al.. (2007). High-breakdown-voltage pn-junction diodes on GaN substrates. Journal of Crystal Growth. 298. 875–878. 81 indexed citations
13.
Hashimoto, S., Yusuke Yoshizumi, Takehiko Tanabe, & Makoto Kiyama. (2006). High-purity GaN epitaxial layers for power devices on low-dislocation-density GaN substrates. Journal of Crystal Growth. 298. 871–874. 60 indexed citations
14.
Kiyama, Makoto, Makoto Yamada, & Mitsuaki Tatsumi. (2004). Quantitative analysis of low-frequency current oscillation in semi-insulating GaAs. The European Physical Journal Applied Physics. 27(1-3). 185–188. 8 indexed citations
15.
Kiyama, Makoto, Mitsuaki Tatsumi, & Makoto Yamada. (2004). Electric-field-enhanced electron capture coefficient of EL2 level in semi-insulating GaAs. Applied Physics Letters. 86(1). 10 indexed citations
16.
Sawada, Shin‐ichi, Makoto Kiyama, Ryusuke Nakai, et al.. (2002). Slip defect generation on GaAs wafers during high temperature process: a thermoelastic study from a crystallographic viewpoint. 50–53. 1 indexed citations
17.
Sawada, Shin‐ichi, et al.. (1998). Thermoelastic Analysis of Slip Defect Generation on GaAs Wafers. Japanese Journal of Applied Physics. 37(10R). 5457–5457. 6 indexed citations
18.
Yoshida, Hiroaki, et al.. (1997). Heat-Treatment Study of Deep-Level Defects in Semi-Insulating Liquid-Encapsulated Czochralski Gallium Arsenide Substrates. Japanese Journal of Applied Physics. 36(1R). 19–19. 6 indexed citations
19.
Yoshida, Hiroaki, et al.. (1995). Effects of Activation Annealing on Thermally Stimulated Current in Semi-Insulating LEC GaAs Substrates. Materials science forum. 196-201. 243–248. 1 indexed citations
20.
Morishita, H., et al.. (1993). Vth control in GaAs using substrate parameters. III-Vs Review. 6(3). 36–39. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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