M. Gassoumi

1.0k total citations
65 papers, 789 citations indexed

About

M. Gassoumi is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, M. Gassoumi has authored 65 papers receiving a total of 789 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Electrical and Electronic Engineering, 33 papers in Condensed Matter Physics and 33 papers in Materials Chemistry. Recurrent topics in M. Gassoumi's work include GaN-based semiconductor devices and materials (29 papers), Semiconductor materials and devices (24 papers) and Magnetic and transport properties of perovskites and related materials (12 papers). M. Gassoumi is often cited by papers focused on GaN-based semiconductor devices and materials (29 papers), Semiconductor materials and devices (24 papers) and Magnetic and transport properties of perovskites and related materials (12 papers). M. Gassoumi collaborates with scholars based in Tunisia, Saudi Arabia and France. M. Gassoumi's co-authors include Christophe Gaquière, H. Rahmouni, K. Khirouni, H. Mâaref, Hassen Maaref, Y. Moualhi, S. Saadaoui, R. M’nassri, A. Selmi and Muaffaq M. Nofal and has published in prestigious journals such as Journal of Applied Physics, RSC Advances and Journal of Alloys and Compounds.

In The Last Decade

M. Gassoumi

59 papers receiving 767 citations

Peers

M. Gassoumi
Chin‐Che Tin United States
Jaetae Seo United States
V. Kubilius Lithuania
Yulei Han China
M. Gassoumi
Citations per year, relative to M. Gassoumi M. Gassoumi (= 1×) peers Giovanni Vinai

Countries citing papers authored by M. Gassoumi

Since Specialization
Citations

This map shows the geographic impact of M. Gassoumi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Gassoumi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Gassoumi more than expected).

Fields of papers citing papers by M. Gassoumi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Gassoumi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Gassoumi. The network helps show where M. Gassoumi may publish in the future.

Co-authorship network of co-authors of M. Gassoumi

This figure shows the co-authorship network connecting the top 25 collaborators of M. Gassoumi. A scholar is included among the top collaborators of M. Gassoumi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Gassoumi. M. Gassoumi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bouazizi, Mohamed Lamjed, et al.. (2025). Detailed structural study, optical, and dielectric properties of Co0.4Ni0.3Zn0.3Fe2O4 ferrite and its potential applications for optoelectronic and electronic devices. Journal of Sol-Gel Science and Technology. 116(1). 378–401. 4 indexed citations
2.
Hcini, Sobhi, et al.. (2025). Structural, optical, and magnetic properties of Pr-substituted magnesium-nickel ferrites prepared by sol-gel method. Ceramics International. 51(23). 38979–38989.
3.
Alvarez‐Serrano, I., et al.. (2024). Chenopodium exsuccum plant extract for green zinc oxide nanoparticles synthesis: Photocatalytic titan yellow degradation and antioxidant and antibacterial properties. Inorganic Chemistry Communications. 172. 113724–113724. 6 indexed citations
4.
Gassoumi, Abdelaziz, et al.. (2024). Experimental study of electrical and dielectric properties of Cu0.6Mg0.2Co0.2FeCrO4 spinel ferrite. Journal of Sol-Gel Science and Technology. 110(3). 859–874. 6 indexed citations
6.
Dhahri, A., et al.. (2024). Critical behavior around the ferromagnetic–paramagnetic phase transition in La2−xCex/2Erx/2NiMnO6 using an iterative approach. Inorganic Chemistry Communications. 170. 113153–113153.
7.
Salem, Moez, et al.. (2023). Ag Doped ZnO Thin Films Deposited by Spin Coating for Silicon Surface Passivation. Silicon. 15(17). 7321–7326. 9 indexed citations
8.
Gassoumi, M., et al.. (2023). Electron confinement enhancement in AlGaN/AlN/GaN HEMT using BGaN buffer. Journal of Ovonic Research. 19(1). 81–86.
9.
Gassoumi, M., et al.. (2022). Electrical characterization of AlGaN/GaN/Si high electron mobility transistors. Journal of Ovonic Research. 18(2). 159–165. 1 indexed citations
10.
Saleh, Sayed M., Wael A. El‐Sayed, May A. El‐Manawaty, M. Gassoumi, & Reham Ali. (2022). An Eco-Friendly Synthetic Approach for Copper Nanoclusters and Their Potential in Lead Ions Sensing and Biological Applications. Biosensors. 12(4). 197–197. 18 indexed citations
11.
Al‐Fakeh, Maged S., et al.. (2021). Characterization, Antimicrobial and Anticancer Properties of Palladium Nanoparticles Biosynthesized Optimally Using Saudi Propolis. Nanomaterials. 11(10). 2666–2666. 35 indexed citations
12.
Moualhi, Y., H. Rahmouni, M. Gassoumi, & K. Khirouni. (2020). Summerfield scaling model and conduction processes defining the transport properties of silver substituted half doped (La–Ca) MnO3 ceramic. Ceramics International. 46(15). 24710–24717. 42 indexed citations
13.
Gassoumi, M.. (2020). Conductance Deep-Level Transient Spectroscopy and Current Transport Mechanisms in Au|Pt|n-GaN Schottky Barrier Diodes. Physics of the Solid State. 62(4). 636–641. 6 indexed citations
14.
Rahmouni, H., et al.. (2020). Transport properties of La0.9Sr0.1MnO3 manganite. The European Physical Journal Plus. 135(6). 35 indexed citations
15.
Helali, Abdelhamid, et al.. (2018). DC and RF characteristics optimization of AlGaN/GaN/BGaN/GaN/Si HEMT for microwave-power and high temperature application. Results in Physics. 12. 302–306. 25 indexed citations
16.
Helali, Abdelhamid, et al.. (2016). Small signal modeling of HEMTs AlGaN/GaN/SiC for sensor and high-temperature applications. Optik. 127(19). 7881–7888. 4 indexed citations
17.
Hamadi, Naoufel Ben, et al.. (2015). Characterisation of the effect of surface passivation with SiO2/SiN on deep levels in AlGaN/GaN/Si HEMTs. Journal of Alloys and Compounds. 653. 624–628. 11 indexed citations
18.
Gassoumi, M., et al.. (2010). Electron traps studied in AIGaN/GaN HEMT on Si substrate using capacitance deep level transient spectroscopy. Journal of Optoelectronics and Advanced Materials. 12(11). 2190–2193. 5 indexed citations
19.
Gassoumi, M., Jean‐Marie Bluet, Hassen Maaref, et al.. (2005). Conductance deep-level transient spectroscopy study of 1μm gate length 4H-SiC MESFETs. Solid-State Electronics. 50(2). 214–219. 7 indexed citations
20.
Gassoumi, M., N. Sghaier, H. Mâaref, et al.. (2004). Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates. Materials science forum. 457-460. 1185–1188. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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