Seema Vinayak

609 total citations
39 papers, 478 citations indexed

About

Seema Vinayak is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Seema Vinayak has authored 39 papers receiving a total of 478 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 27 papers in Condensed Matter Physics and 18 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Seema Vinayak's work include GaN-based semiconductor devices and materials (27 papers), Semiconductor materials and devices (16 papers) and Semiconductor materials and interfaces (11 papers). Seema Vinayak is often cited by papers focused on GaN-based semiconductor devices and materials (27 papers), Semiconductor materials and devices (16 papers) and Semiconductor materials and interfaces (11 papers). Seema Vinayak collaborates with scholars based in India, Taiwan and Italy. Seema Vinayak's co-authors include Rajendra Singh, D. S. Rawal, Ashish Kumar, Chandan Sharma, V. D. Vankar, H. P. Vyas, K. Muraleedharan, Manoj Saxena, Rajesh Kumar Sharma and Sunil Sharma and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and IEEE Transactions on Electron Devices.

In The Last Decade

Seema Vinayak

38 papers receiving 448 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Seema Vinayak India 15 327 292 160 128 119 39 478
Hassan Maher France 13 498 1.5× 397 1.4× 118 0.7× 152 1.2× 136 1.1× 71 632
Andrew J. Trunek United States 13 488 1.5× 136 0.5× 120 0.8× 143 1.1× 122 1.0× 53 596
Malek Zegaoui France 19 639 2.0× 492 1.7× 210 1.3× 233 1.8× 120 1.0× 55 835
Randy P. Tompkins United States 13 213 0.7× 227 0.8× 119 0.7× 133 1.0× 171 1.4× 33 381
A. L. Syrkin United States 13 337 1.0× 236 0.8× 171 1.1× 145 1.1× 168 1.4× 53 524
S. Lee United States 9 153 0.5× 196 0.7× 132 0.8× 316 2.5× 171 1.4× 26 549
Chunhui Yan United States 9 231 0.7× 474 1.6× 281 1.8× 176 1.4× 291 2.4× 20 611
M. Mamor France 13 439 1.3× 111 0.4× 333 2.1× 67 0.5× 202 1.7× 53 549
Ge Yuan United States 12 150 0.5× 253 0.9× 75 0.5× 150 1.2× 194 1.6× 15 378
Örjan Danielsson Sweden 16 506 1.5× 120 0.4× 53 0.3× 216 1.7× 163 1.4× 41 629

Countries citing papers authored by Seema Vinayak

Since Specialization
Citations

This map shows the geographic impact of Seema Vinayak's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Seema Vinayak with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Seema Vinayak more than expected).

Fields of papers citing papers by Seema Vinayak

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Seema Vinayak. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Seema Vinayak. The network helps show where Seema Vinayak may publish in the future.

Co-authorship network of co-authors of Seema Vinayak

This figure shows the co-authorship network connecting the top 25 collaborators of Seema Vinayak. A scholar is included among the top collaborators of Seema Vinayak based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Seema Vinayak. Seema Vinayak is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sehra, Khushwant, et al.. (2022). Impact of Gamma Radiations on Static, Pulsed I–V, and RF Performance Parameters of AlGaN/GaN HEMT. IEEE Transactions on Electron Devices. 69(5). 2299–2306. 14 indexed citations
2.
Sharma, Chandan, et al.. (2021). Improvement in Schottky barrier inhomogeneities of Ni/AlGaN/GaN Schottky diodes after cumulative γ -ray irradiation. Semiconductor Science and Technology. 36(6). 65012–65012. 3 indexed citations
3.
Sharma, Chandan, Nicola Modolo, Tian‐Li Wu, et al.. (2020). Understanding $\gamma$ -Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact Model. IEEE Transactions on Electron Devices. 67(3). 1126–1131. 16 indexed citations
4.
Rawal, D. S., et al.. (2019). Improvement in DC and pulse characteristics of AlGaN/GaN HEMT by employing dual metal gate structure. Semiconductor Science and Technology. 34(10). 105013–105013. 16 indexed citations
5.
Kumar, Sunil, et al.. (2019). Memory effect in silicon nitride deposition using ICPCVD technique. Journal of theoretical and applied physics. 13(4). 299–304. 3 indexed citations
6.
Jindal, Ashish, et al.. (2019). 1 KW GaN HEMT Based Power Amplifier in UHF Band. 1–4. 2 indexed citations
7.
Sharma, Chandan, et al.. (2019). Cumulative dose γ -irradiation effects on material properties of AlGaN/GaN hetero-structures and electrical properties of HEMT devices. Semiconductor Science and Technology. 34(6). 65024–65024. 30 indexed citations
8.
Sharma, Chandan, et al.. (2019). Effect of γ-ray irradiation on Schottky and ohmic contacts on AlGaN/GaN hetero-structures. Microelectronics Reliability. 105. 113565–113565. 21 indexed citations
9.
10.
Sharma, Chandan, et al.. (2017). Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices. AIP Advances. 7(8). 12 indexed citations
11.
Vinayak, Seema, et al.. (2017). Performance enhancement of gate-annealed AlGaN/GaN HEMTs. Journal of the Korean Physical Society. 70(5). 533–538. 7 indexed citations
12.
Kumar, Ashish, et al.. (2016). Studies on the Thermal Stability of Ni/n–GaN and Pt/n–GaN Schottky Barrier Diodes. Materials Research Express. 3(8). 85901–85901. 6 indexed citations
13.
Jindal, Ashish, et al.. (2015). Design of a 2.8 W S-band power amplifier using load pull measurement. 1–2. 1 indexed citations
14.
Mishra, Meena, et al.. (2015). Design and development of S band 10W And 20W power amplifier. 1–2. 4 indexed citations
15.
Sharma, Sunil, et al.. (2014). Analysis of reverse leakage current in differently passivated AlGaN/GaN HEMTs: A case study. 42. 1–4. 1 indexed citations
16.
Kumar, Ashish, et al.. (2014). Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme. Applied Physics Letters. 104(13). 22 indexed citations
17.
Vinayak, Seema, et al.. (2014). Micro-structural evaluation of Ti/Al/Ni/Au ohmic contacts with different Ti/Al thicknesses in AlGaN/GaN HEMTs. Materials Science and Engineering B. 183. 47–53. 29 indexed citations
18.
Rawal, D. S., Seema Vinayak, A. K. Kapoor, et al.. (2012). GaN etch rate and surface roughness evolution in Cl2/Ar based inductively coupled plasma etching. Thin Solid Films. 520(24). 7212–7218. 16 indexed citations
19.
Vinayak, Seema, H. P. Vyas, K. Muraleedharan, & V. D. Vankar. (2006). Ni–Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits. Thin Solid Films. 514(1-2). 52–57. 32 indexed citations
20.
Bhattacharya, Bhaskar, et al.. (1998). Thermal reliability of n-GaAs/Ti/Pt/Au Schottky contacts with thin Ti films for reduced gate resistance. Thin Solid Films. 330(2). 146–149. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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