Étienne Okada

654 total citations
43 papers, 417 citations indexed

About

Étienne Okada is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Étienne Okada has authored 43 papers receiving a total of 417 indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 18 papers in Condensed Matter Physics and 13 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Étienne Okada's work include Radio Frequency Integrated Circuit Design (19 papers), GaN-based semiconductor devices and materials (18 papers) and Semiconductor materials and devices (12 papers). Étienne Okada is often cited by papers focused on Radio Frequency Integrated Circuit Design (19 papers), GaN-based semiconductor devices and materials (18 papers) and Semiconductor materials and devices (12 papers). Étienne Okada collaborates with scholars based in France, India and China. Étienne Okada's co-authors include Farid Medjdoub, Riad Kabouche, Y. Cordier, Marie Lesecq, Virginie Hoel, D. Lippens, Jean-Claude de Jaeger, Ludovic Burgnies, Éric Lheurette and N. Defrance and has published in prestigious journals such as Applied Physics Letters, Sensors and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

Étienne Okada

36 papers receiving 394 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Étienne Okada France	10	303	266	142	106	72	43	417
Yang Lu China	14	398 1.3×	415 1.6×	169 1.2×	121 1.1×	30 0.4×	65	530
Chih-Wei Yang Taiwan	12	409 1.3×	227 0.9×	117 0.8×	66 0.6×	25 0.3×	53	461
C. Liu China	11	160 0.5×	162 0.6×	102 0.7×	37 0.3×	36 0.5×	18	355
H. Takahashi Japan	14	413 1.4×	195 0.7×	100 0.7×	183 1.7×	59 0.8×	55	520
Kyekun Cheon South Korea	8	206 0.7×	397 1.5×	86 0.6×	49 0.5×	349 4.8×	10	470
K. Yamazaki Japan	13	146 0.5×	340 1.3×	98 0.7×	49 0.5×	262 3.6×	24	416
Vladimir V. Talanov United States	9	148 0.5×	170 0.6×	93 0.7×	97 0.9×	100 1.4×	37	324
Shiro Ozaki Japan	13	477 1.6×	430 1.6×	225 1.6×	110 1.0×	28 0.4×	50	596
S. N. Yurkov Russia	12	568 1.9×	222 0.8×	85 0.6×	257 2.4×	40 0.6×	42	689

Countries citing papers authored by Étienne Okada

Since Specialization

Citations

This map shows the geographic impact of Étienne Okada's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Étienne Okada with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Étienne Okada more than expected).

Fields of papers citing papers by Étienne Okada

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Étienne Okada. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Étienne Okada. The network helps show where Étienne Okada may publish in the future.

Co-authorship network of co-authors of Étienne Okada

This figure shows the co-authorship network connecting the top 25 collaborators of Étienne Okada. A scholar is included among the top collaborators of Étienne Okada based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Étienne Okada. Étienne Okada is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Zegaoui, Malek, J. Mateos, T. González, et al.. (2024). GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement. Gredos (University of Salamanca). 375–378.

Okada, Étienne, et al.. (2024). Thermoelectric characterization of crystalline nano-patterned silicon membranes. Materials Advances. 5(14). 5998–6006.

Morvan, E., et al.. (2024). Nonlinear Modeling of CMOS Compatible SiN/AlN/GaN MIS-HEMT on 200mm Si Operating at mm-Wave Frequencies. SPIRE - Sciences Po Institutional REpository. 303–306.

Venkatachalam, Srisaran, et al.. (2023). Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier. Micromachines. 14(2). 291–291. 8 indexed citations

Defrance, N., et al.. (2023). Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes. Electronics. 12(9). 2007–2007.

Lampin, Jean‐François, et al.. (2023). On-wafer RF high-power measurement with an LSMO load at 40 GHz. SPIRE - Sciences Po Institutional REpository. 1–2.

Okada, Étienne, et al.. (2021). Temperature compensated power detector towards power consumption optimization in 5G devices. Microelectronics Journal. 120. 105351–105351. 1 indexed citations

Maricot, Sophie, et al.. (2021). Plasmonic Layer as a Localized Temperature Control Element for Surface Plasmonic Resonance-Based Sensors. Sensors. 21(6). 2035–2035. 3 indexed citations

Okada, Étienne, et al.. (2021). Design of zero bias power detectors towards power consumption optimization in 5G devices. Microelectronics Journal. 111. 105035–105035. 2 indexed citations

10.

Okada, Étienne, et al.. (2021). Load-Pull Setup Development at 185 GHz for On-Wafer Characterization of SiGe HBT in BiCMOS 55 nm Technology. IEEE Transactions on Microwave Theory and Techniques. 70(1). 444–452. 3 indexed citations

11.

Lesecq, Marie, et al.. (2019). 2 W mm ⁻¹ power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz. Semiconductor Science and Technology. 34(12). 12LT01–12LT01. 9 indexed citations

12.

Kabouche, Riad, et al.. (2019). High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation. IEEE Journal of the Electron Devices Society. 7. 1145–1150. 87 indexed citations

13.

Okada, Étienne, Flavie Braud, J.F. Robillard, et al.. (2019). Thermal Analysis of Ultimately-Thinned-and-Transfer-Bonded CMOS on Mechanically Flexible Foils. IEEE Journal of the Electron Devices Society. 7. 973–978. 2 indexed citations

14.

Okada, Étienne, et al.. (2019). A 30.1 mW / $\mu$ m² SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node. IEEE Electron Device Letters. 41(1). 12–14. 3 indexed citations

15.

Cristini, O., Bin Wei, Bernard Rémy, et al.. (2018). Local Schottky contacts of embedded Ag nanoparticles in Al₂O₃/SiN_x:H stacks on Si: a design to enhance field effect passivation of Si junctions. Nanotechnology. 29(28). 285403–285403. 6 indexed citations

16.

Krzeminski, Christophe, et al.. (2017). Optical and electrical properties of nanostructured implanted silicon n+-p junction passivated by atomic layer deposited Al2O3. Physica E Low-dimensional Systems and Nanostructures. 93. 190–195. 5 indexed citations

17.

Kabouche, Riad, et al.. (2017). High power, high PAE Q-band sub-10 nm barrier thickness AlN/GaN HEMTs. physica status solidi (a). 214(8). 1600797–1600797. 12 indexed citations

18.

Théron, D., B. Grimbert, Isabelle Roch‐Jeune, et al.. (2016). Gallium nitride MEMS resonators: How residual stress impacts design and performances. 1–4.

19.

Zaknoune, M., Étienne Okada, Yannick Roelens, et al.. (2014). 0.2-$\mu{\rm m}$ InP/GaAsSb DHBT Power Performance With 10 ${\rm mW}/\mu{\rm m}^{2}$ and 25% PAE at 94 GHz. IEEE Electron Device Letters. 35(3). 321–323. 3 indexed citations

20.

Soltani, A., Y. Cordier, Jean-Claude Gerbedoen, et al.. (2013). Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology. Semiconductor Science and Technology. 28(9). 94003–94003. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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