V. Ivantsov

411 total citations
37 papers, 321 citations indexed

About

V. Ivantsov is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, V. Ivantsov has authored 37 papers receiving a total of 321 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Condensed Matter Physics, 23 papers in Electrical and Electronic Engineering and 12 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in V. Ivantsov's work include GaN-based semiconductor devices and materials (30 papers), Silicon Carbide Semiconductor Technologies (14 papers) and Semiconductor materials and devices (11 papers). V. Ivantsov is often cited by papers focused on GaN-based semiconductor devices and materials (30 papers), Silicon Carbide Semiconductor Technologies (14 papers) and Semiconductor materials and devices (11 papers). V. Ivantsov collaborates with scholars based in United States, Russia and France. V. Ivantsov's co-authors include V. Dmitriev, A. Usikov, O. V. Kovalenkov, V. Soukhoveev, A. L. Syrkin, Albert V. Davydov, A. E. Nikolaev, A. Yu. Nikiforov, Jaime A. Freitas and А. И. Печников and has published in prestigious journals such as Journal of Applied Physics, Japanese Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

V. Ivantsov

37 papers receiving 304 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Ivantsov United States 10 244 142 120 115 79 37 321
T. Yu. Chemekova Russia 9 255 1.0× 144 1.0× 143 1.2× 106 0.9× 164 2.1× 16 362
Sascha Kreiskott United States 10 257 1.1× 112 0.8× 177 1.5× 108 0.9× 69 0.9× 12 359
T. Shibata Japan 8 198 0.8× 107 0.8× 141 1.2× 107 0.9× 37 0.5× 13 288
M. P. Shcheglov Russia 8 138 0.6× 159 1.1× 103 0.9× 66 0.6× 60 0.8× 64 294
S. S. Nagalyuk Russia 11 193 0.8× 181 1.3× 125 1.0× 99 0.9× 101 1.3× 45 350
Lung-Hsing Hsu Taiwan 9 156 0.6× 159 1.1× 96 0.8× 86 0.7× 48 0.6× 19 292
Wen-Tai Lin Taiwan 9 103 0.4× 199 1.4× 213 1.8× 96 0.8× 122 1.5× 37 353
Minoru Kawahara Japan 9 303 1.2× 78 0.5× 215 1.8× 180 1.6× 48 0.6× 14 330
O. V. Kovalenkov United States 11 271 1.1× 153 1.1× 128 1.1× 114 1.0× 111 1.4× 33 367
Michael A. Derenge United States 13 228 0.9× 338 2.4× 88 0.7× 78 0.7× 40 0.5× 46 425

Countries citing papers authored by V. Ivantsov

Since Specialization
Citations

This map shows the geographic impact of V. Ivantsov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Ivantsov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Ivantsov more than expected).

Fields of papers citing papers by V. Ivantsov

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Ivantsov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Ivantsov. The network helps show where V. Ivantsov may publish in the future.

Co-authorship network of co-authors of V. Ivantsov

This figure shows the co-authorship network connecting the top 25 collaborators of V. Ivantsov. A scholar is included among the top collaborators of V. Ivantsov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Ivantsov. V. Ivantsov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Usikov, A., et al.. (2013). Accumulation of Background Impurities in Hydride Vapor Phase Epitaxy Grown GaN Layers. Japanese Journal of Applied Physics. 52(8S). 08JB22–08JB22. 10 indexed citations
2.
Usikov, A., V. Soukhoveev, A. L. Syrkin, et al.. (2010). Structural characterization of thick (1122) GaN layers grown by HVPE on m‐plane sapphire. physica status solidi (a). 207(6). 1295–1298. 4 indexed citations
3.
Soukhoveev, V., et al.. (2009). Large area GaN and AlN template substrates fabricated by HVPE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 14 indexed citations
4.
Usikov, A., et al.. (2009). GaN layer growth by HVPE on m‐plane sapphire substrates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 6 indexed citations
5.
Syrkin, A. L., V. Ivantsov, O. V. Kovalenkov, et al.. (2008). First all‐HVPE grown InGaN/InGaN MQW LED structures for 460‐510 nm. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 2244–2246. 4 indexed citations
6.
Soukhoveev, V., O. V. Kovalenkov, V. Ivantsov, et al.. (2006). AlGaN epitaxial layers grown by HVPE on sapphire substrates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 1483–1486. 9 indexed citations
7.
Bellet‐Amalric, E., et al.. (2006). Polishing and characterization of thick AlN layers grown on SiC substrates by stress control hydride vapor phase epitaxy. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 1448–1452. 6 indexed citations
8.
Soukhoveev, V., O. V. Kovalenkov, V. Ivantsov, et al.. (2006). Recent results on AlN growth by HVPE and fabrication of free standing AlN wafers. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 1653–1657. 17 indexed citations
9.
Song, D. Y., V. Kuryatkov, Madivala G. Basavaraj, et al.. (2006). Morphological, electrical, and optical properties of InN grown by hydride vapor phase epitaxy on sapphire and template substrates. Journal of Applied Physics. 99(11). 6 indexed citations
10.
Syrkin, A. L., A. Usikov, V. Soukhoveev, et al.. (2006). InN‐based layers grown by modified HVPE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 1444–1447. 6 indexed citations
11.
Usikov, A., O. V. Kovalenkov, V. Ivantsov, et al.. (2004). P-type GaN epitaxial layers and AlGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE. MRS Proceedings. 831. 3 indexed citations
12.
Mynbaeva, M. G., et al.. (2003). Semi-insulating porous SiC substrates. Semiconductor Science and Technology. 18(6). 602–606. 9 indexed citations
13.
Melnik, Yu., V. Soukhoveev, V. Ivantsov, et al.. (2003). AlN substrates: fabrication via vapor phase growth and characterization. physica status solidi (a). 200(1). 22–25. 16 indexed citations
14.
Mynbaeva, M. G., N.I. Kuznetsov, K. D. Mynbaev, et al.. (2003). Porous SiC: New Applications through In- and Out- Dopant Diffusion. Materials science forum. 433-436. 657–660. 1 indexed citations
15.
Myers, T. H., Brenda L. VanMil, C.D. Stinespring, et al.. (2002). Use of high temperature hydrogen annealing to remove sub-surface damage in bulk GaN. Journal of Crystal Growth. 246(3-4). 244–251. 14 indexed citations
16.
Soukhoveev, V., V. Ivantsov, Yu. Melnik, et al.. (2001). Characterization of 2.5-Inch Diameter Bulk GaN Grown from Melt-Solution. physica status solidi (a). 188(1). 411–414. 9 indexed citations
17.
Herrera, Manuel, et al.. (2000). Origin of yellow luminescence from reduced pressure grown bulk GaN crystals. Applied Physics A. 71(1). 55–58. 2 indexed citations
18.
Ivantsov, V., et al.. (1998). High Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase Epitaxy. Materials science forum. 264-268. 163–166. 27 indexed citations
19.
Ivantsov, V., A. S. Zubrilov, В. И. Николаев, et al.. (1998). Crystal Structure and Optical Properties of Bulk GaN Crystals Grown from a Melt at Reduced Pressure. Materials science forum. 264-268. 1331–1334. 3 indexed citations
20.
Ivantsov, V., et al.. (1997). Physical properties of bulk single-crystal wafers of gallium nitride. Physics of the Solid State. 39(5). 763–765. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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