В. В. Ратников

995 citations

79 papers · 799 indexed · h-index 16

Condensed Matter Physics top 2%
Materials Chemistry top 10%
Electrical and Electronic Engineering top 10%
Electronic, Optical and Magnetic Materials top 10%
Atomic and Molecular Physics, and Optics top 10%

Co-authors: R. N. Kyutt T. V. Shubina S. V. Ivanov A. N. Titkov V. N. Jmerik Д. В. Нечаев B. Ḿonemar A. А. Ситникова
Topics: GaN-based semiconductor devices and materials (46 papers)Ga2O3 and related materials (28 papers)ZnO doping and properties (22 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Materials Chemistry
Journals: Physical review. B, Condensed matter Applied Physics Letters Journal of Applied Physics
Partner nations: Russia Sweden Belarus

In The Last Decade

В. В. Ратников

77 papers receiving 774 citations

Peers

Countries citing papers authored by В. В. Ратников

Since Specialization

Citations

This map shows the geographic impact of В. В. Ратников's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by В. В. Ратников with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites В. В. Ратников more than expected).

Fields of papers citing papers by В. В. Ратников

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by В. В. Ратников. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by В. В. Ратников. The network helps show where В. В. Ратников may publish in the future.

Co-authorship network of co-authors of В. В. Ратников

This figure shows the co-authorship network connecting the top 25 collaborators of В. В. Ратников. A scholar is included among the top collaborators of В. В. Ратников based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with В. В. Ратников. В. В. Ратников is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Comparison of Characteristics of Thin PZT Films on Si-on-Sapphire and Si Substrates 2021 ·Physics of the Solid State ·(unknown),Н. В. Зайцева,В. В. Ратников,V. S. Yuferev,Д. С. Серегин,К. А. Воротилов,А. С. Сигов	2
2	Сравнение характеристик тонких пленок PZT на подложках из сапфира и кремния 2021 ·Физика твердого тела ·(unknown),Н. В. Зайцева,В. В. Ратников,(unknown),Д. С. Серегин,К. А. Воротилов,А. С. Сигов	1
3	Stress evolution during growth of AlN templates on c-Al2O3 substrates by plasma-assisted molecular beam epitaxy 2019 ·Journal of Physics Conference Series ·(unknown),Д. В. Нечаев,P. N. Brunkov,В. В. Ратников,S. I. Troshkov,С. В. Иванов,V. N. Jmerik	1
4	Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers 2018 ·Semiconductors ·Т. В. Малин,(unknown),V. G. Mansurov,(unknown),(unknown),В. В. Ратников,A. N. Smirnov,V. Yu. Davydov,К. С. Журавлев	5
5	Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c-Al₂O₃ by using flux- and temperature-modulated techniques 2015 ·Journal of materials research/Pratt's guide to venture capital sources ·V. N. Jmerik,Д. В. Нечаев,Sergei Rouvimov,В. В. Ратников,P. S. Kop’ev,(unknown),E. V. Lutsenko,G. P. Yablonskii,(unknown),(unknown),Ahmed Y. Alyamani,S. V. Ivanov	18
6	Nanomaterial disordering in AlGaN/GaN UV LED structures 2015 ·Journal of Physics Conference Series ·(unknown),M. E. Levinshteĭn,M. M. Kulagina,(unknown),(unknown),V. N. Petrov,В. В. Ратников,(unknown),S. I. Troshkov,N. M. Shmidt,A. Usikov,(unknown),Yu.N. Makarov	3
7	Defect engineering in AlGaN-based UV optoelectronic heterostructures grown on c-Al₂O₃ by plasma-assisted molecular beam epitaxy 2015 ·MRS Proceedings ·Sergei Rouvimov,V. N. Jmerik,Д. В. Нечаев,В. В. Ратников,А. А. Торопов,(unknown),P. N. Brunkov,(unknown),E. V. Lutsenko,S. V. Ivanov	1
8	Defects and stresses in MBE-grown GaN and Al0.3Ga0.7N layers doped by silicon using silane 2013 ·Crystallography Reports ·В. В. Ратников,R. N. Kyutt,A. N. Smirnov,V. Yu. Davydov,M. P. Shcheglov,Т. В. Малин,К. С. Журавлев	3
9	Structural and optical properties of porous silicon prepared from a p +-epitaxial layer on n-Si(111) 2013 ·Technical Physics ·A. S. Lenshin,В. М. Кашкаров,(unknown),Б. Л. Агапов,É. P. Domashevskaya,В. В. Ратников,L. M. Sorokin	1
10	X-ray diffraction study of short-period AlN/GaN superlattices 2013 ·Crystallography Reports ·R. N. Kyutt,M. P. Shcheglov,В. В. Ратников,M. A. Yagovkina,V. Yu. Davydov,A. N. Smirnov,(unknown),E. E. Zavarin,W. V. Lundin	4
11	Growth striations and dislocations in highly doped semiconductor single crystals 2008 ·Journal of Crystal Growth ·(unknown),(unknown),Б. Г. Захаров,(unknown),В. В. Ратников,I. L. Shul’pina	10
12	X-ray diffraction study of defect distribution in Czochralski grown silicon highly doped by As 2005 ·Journal of Physics D Applied Physics ·R. N. Kyutt,I. L. Shul’pina,(unknown),В. В. Ратников,L. M. Sorokin,M. P. Scheglov,S.S. Ruvimov,(unknown),V.R. Todt	10
13	P-type GaN epitaxial layers and AlGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE 2004 ·MRS Proceedings ·A. Usikov,O. V. Kovalenkov,V. Ivantsov,(unknown),V. Dmitriev,N. M. Shmidt,D. S. Poloskin,V. N. Petrov,В. В. Ратников	3
14	TEM and HREM study of 3D silicon and platinum nanoscale assemblies in dielectric opal matrix 2001 ·Semiconductor Science and Technology ·Н. А. Феоктистов,В. Г. Голубев,J. L. Hutchison,(unknown),А. Б. Певцов,В. В. Ратников,Jeremy Sloan,L. M. Sorokin	11
15	X-ray diffraction study of changes in the CdTe monocrystal real structure induced by laser radiation 2001 ·Physics of the Solid State ·I. L. Shul’pina,В. В. Ратников,(unknown)	3
16	X-ray measurement of a microdistortion tensor and its application in an analysis of the dislocation structure of thick GaN layers obtained by hydrochloride gaseous-phase epitaxy 2000 ·Physics of the Solid State ·В. В. Ратников,R. N. Kyutt,T. V. Shubina	2
17	GaN and AlN Layers Grown by Nano Epitaxial Lateral Overgrowth Technique on Porous Substrates 1999 ·MRS Proceedings ·M. G. Mynbaeva,A. N. Titkov,(unknown),A. S. Zubrilov,В. В. Ратников,V. Yu. Davydov,N.I. Kuznetsov,K. D. Mynbaev,С. И. Степанов,A. E. Cherenkov,(unknown),D. Tsvetkov,V. Dmitriev	1
18	MBE Growth of Hexagonal InN Films on Sapphire with Different Initial Growth Stages 1999 ·physica status solidi (a) ·V. V. Mamutin,V. A. Vekshin,V. Yu. Davydov,В. В. Ратников,T. V. Shubina,S. V. Ivanov,P. S. Kop’ev,M. Karlsteen,(unknown),M. Willander	40
19	Structural perfection of GaN epitaxial layers according to x-ray diffraction measurements 1999 ·Physics of the Solid State ·R. N. Kyutt,В. В. Ратников,(unknown),M. P. Shcheglov	22
20	Growth of fullerene single crystals from a benzene solution 1996 ·Alexandr V. Talyzin,В. В. Ратников,П. П. Сырников	1

About В. В. Ратников

В. В. Ратников is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 79 papers that have together received 799 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (46 papers), Ga2O3 and related materials (28 papers) and ZnO doping and properties (22 papers). The work is most often cited by research in Condensed Matter Physics (561 citations), Electronic, Optical and Magnetic Materials (285 citations) and Materials Chemistry (380 citations). В. В. Ратников has collaborated with scholars based in Russia, Sweden and Belarus. Frequent co-authors include R. N. Kyutt, T. V. Shubina, S. V. Ivanov, A. N. Titkov, V. N. Jmerik, Д. В. Нечаев, B. Ḿonemar, A. А. Ситникова, N. M. Shmidt and M. P. Shcheglov. Their work appears in journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact