N. N. Ledentsov

9.1k citations

263 papers · 6.2k indexed · 1 hit paper · h-index 39

Impact in

Atomic and Molecular Physics, and Optics top 0.2%
- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
Electrical and Electronic Engineering top 0.5%
- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- Advanced Semiconductor Detectors and Materials
- Optical Network Technologies

Papers in

Atomic and Molecular Physics, and Optics 174
- Semiconductor Quantum Structures and Devices 157
- Photonic Crystals and Applications 17
Electrical and Electronic Engineering 223
- Semiconductor Lasers and Optical Devices 184
- Photonic and Optical Devices 145
- Optical Network Technologies 67
- Advanced Semiconductor Detectors and Materials 30

Co-authors: D. Bimberg V. M. Ustinov Zh. I. Alfërov Marius Grundmann M. V. Maximov P. S. Kop’ev N. Kirstaedter V. A. Shchukin
Journals: Applied Physics Letters (24 papers)Electronics Letters (16 papers)Physical review. B, Condensed matter (9 papers)Journal of Lightwave Technology (6 papers)IEEE Journal of Selected Topics in Quantum Electronics (6 papers)
Partner nations: Germany Russia Poland

In The Last Decade

N. N. Ledentsov

248 papers receiving 6.0k citations

Hit Papers

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Low threshold, large T _o injectionlaser emissionfrom (InGa)As quantum dots 1994 · 564 citations

Peers

Countries citing papers authored by N. N. Ledentsov

Since Specialization

Citations

This map shows the geographic impact of N. N. Ledentsov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. N. Ledentsov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. N. Ledentsov more than expected).

Fields of papers citing papers by N. N. Ledentsov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. N. Ledentsov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. N. Ledentsov. The network helps show where N. N. Ledentsov may publish in the future.

Co-authors

The 25 scholars most cited alongside N. N. Ledentsov, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with N. N. Ledentsov Line = papers co-authored together N. N. Ledentsov links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Characterization of Chirp Properties of an 850 nm Single-Mode Multi-Aperture Vertical-Cavity Surface-Emitting Laser and Analysis of Transmission Performance over Multimode and Single-Mode Fibers Photonics ·Xin Chen, N. N. Ledentsov, Abdullah S. Karar, Jason E. Hurley, O. Makarov, Hao Dong, Ahmad Atieh, Ming-Jun Li, N. N. Ledentsov	2025	1
2	Laterally coupled vertical-cavity surface-emitting lasers with tunable resonance width and frequency Journal of Applied Physics ·Markus Lindemann, Martino D’Alessandro, N. N. Ledentsov, O. Makarov, N. N. Ledentsov, Alberto Tibaldi, Nils C. Gerhardt, Martin R. Hofmann	2025	1
3	VCSELs: Influence of Design on Performance and Data Transmission over Multi-Mode and Single-Mode Fibers Photonics ·N. N. Ledentsov, N. N. Ledentsov, V. A. Shchukin, Alexander N. Ledentsov, O. Makarov, Ilya E. Titkov, Markus Lindemann, Thomas de Adelsburg Ettmayer, Nils C. Gerhardt, Martin R. Hofmann, Xin Chen, Jason E. Hurley, Hao Dong, Ming-Jun Li	2025	0
4	Impact of stress current on electro-optical properties of the active cavity region in 850 nm VCSELs Arndt Jaeger, N. N. Ledentsov, Helmut Meinert, Maximilian Stock, Kevin Ehling, Ilya E. Titkov, O. Makarov	2024	0
5	Miniaturized Vertical‐Cavity Surface‐Emitting Laser Array with a Novel Electrode Design for High‐Speed, Low‐Noise, and High‐Brightness Performance SHILAP Revista de lepidopterología ·Zuhaib Khan, Min-Long Wu, Cheng‐Wei Lin, Cheng-Chun Chen, Chia‐Jui Chang, Tien‐Chang Lu, N. N. Ledentsov, N. N. Ledentsov, Jin‐Wei Shi	2023	1
6	Miniaturized Vertical‐Cavity Surface‐Emitting Laser Array with a Novel Electrode Design for High‐Speed, Low‐Noise, and High‐Brightness Performance Advanced Photonics Research ·Zuhaib Khan, Min-Long Wu, Cheng‐Wei Lin, Cheng-Chun Chen, Chia‐Jui Chang, Tien‐Chang Lu, N. N. Ledentsov, N. N. Ledentsov, Jin‐Wei Shi	2023	0
7	Single-Mode 940 nm VCSELs With Narrow Divergence Angles and High-Power Performances for Fiber and Free-Space Optical Communications IEEE Access ·Zuhaib Khan, N. N. Ledentsov, Łukasz Chorchos, Jie-Chen Shih, Yung-Hao Chang, Jin‐Wei Shi	2020	14
8	25.78 Gbit/s data transmission over 2 km multi‐mode‐fibre with 850 and 910 nm single‐mode VCSELs and a commercial quad small form‐factor pluggable transceiver Electronics Letters ·(unknown), (unknown), M. Agustin, Łukasz Chorchos, N. N. Ledentsov, J. P. Turkiewicz	2018	11
9	(In,Ga,Al)P–GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range Semiconductor Science and Technology ·N. N. Ledentsov, V. A. Shchukin, Yu. M. Shernyakov, M. M. Kulagina, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, N. Cherkashin	2017	4
10	Formation of Three-Dimensional Islands in Subcritical Layer Deposition in Stranski-Krastanow Growth Physical Review Letters ·V. A. Shchukin, N. N. Ledentsov, Sergei Rouvimov	2013	8
11	83 fJ/bit energy-to-data ratio of 850-nm VCSEL at 17 Gb/s Philip Moser, Werner Hofmann, P. Wolf, G. Fiol, James A. Lott, N. N. Ledentsov, D. Bimberg	2011	3
12	High--power ultrashort pulses output from a modelocked two-section quantum-dot laser Conference on Lasers and Electro-Optics ·Edik U. Rafailov, Maria Ana Cataluna, W. Sibbett, N. D. Il’inskaya, Yu. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, Alexey Kovsh, N. N. Ledentsov	2004	6
13	Capacitance spectroscopy of electron energy levels in InAs quantum dots in a GaAs matrix Semiconductors ·P. N. Brunkov, S. G. Konnikov, V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov, М. В. Максимов, N. N. Ledentsov, P. S. Kop’ev	1996	16
14	Identification of radiative recombination channels in quantum dot structures Semiconductors ·A. F. Tsatsul’nikov, N. N. Ledentsov, М. В. Максимов, A. Yu. Egorov, A. E. Zhukov, S. Ruvimov, V. M. Ustinov, V. V. Komin, I. V. Kochnev, P. S. Kop’ev, Zh. I. Alfërov, D. Bimberg	1996	5
15	Strained submonolayer heterostructures and heterojunctions with quantum points Physics-Uspekhi ·Zh. I. Alfërov, D. Bimberg, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, N. N. Ledentsov, S. Ruvimov, V. M. Ustinov, I. Khejdenrajkh	1995	2
16	Self-organization of strained quantum-size In x Ga 1 - x As structures grown on misoriented (100) surfaces of GaAs during submonolayer molecular-beam epitaxy Semiconductors ·G. M. Gur’yanov, Г. Э. Цырлин, V. N. Petrov, Yu. B. Samsonenko, V. B. Gubanov, N. K. Polyakov, A. O. Golubok, S. Ya. Tipisev, E. P. Musikhina, N. N. Ledentsov	1995	4
17	Luminescence of localized electron-hole pairs in the fundamental absorption region of Zn(S,Se)-(Zn,Cd)Se quantum-well structures Semiconductors ·N. N. Ledentsov, S. V. Ivanov, В. М. Максимов, I. V. Sedova, I. G. Tabatadze, P. S. Kop’ev	1995	1
18	Growth of (In,Ga)As/GaAs quantum-well heterostructures through the deposition of ``submonolayer'' strained InAs layers Semiconductors ·A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, N. N. Ledentsov, М. В. Максимов, V. M. Ustinov	1994	5
19	Optical properties of heterostructures with InGaAs-GaAs quantum clusters Semiconductors ·N. N. Ledentsov, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, М. В. Максимов, I. G. Tabatadze, P. S. Kop’ev	1994	66
20	Yb-Ba-Cu-O growth using a BaO molecular beam Soviet physics. Technical physics ·A. Yu. Egorov, P. S. Kop’ev, N. N. Ledentsov, М. В. Максимов, V. V. Mamutin, M. E. Alferieff	1991	1

About N. N. Ledentsov

N. N. Ledentsov is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Condensed Matter Physics, Materials Chemistry and Spectroscopy, having authored 263 papers that have together received 6.2k indexed citations. Recurring topics across this work include Semiconductor Lasers and Optical Devices (184 papers), Semiconductor Quantum Structures and Devices (157 papers), Photonic and Optical Devices (145 papers), Optical Network Technologies (67 papers), Quantum Dots Synthesis And Properties (32 papers), Advanced Semiconductor Detectors and Materials (30 papers), GaN-based semiconductor devices and materials (19 papers) and Photonic Crystals and Applications (17 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (5.0k citations), Electrical and Electronic Engineering (5.1k citations), Condensed Matter Physics (557 citations), Materials Chemistry (1.6k citations) and Spectroscopy (217 citations). N. N. Ledentsov has collaborated with scholars based in Germany, Russia and Poland. Frequent co-authors include D. Bimberg, V. M. Ustinov, Zh. I. Alfërov, Marius Grundmann, M. V. Maximov, P. S. Kop’ev, N. Kirstaedter, V. A. Shchukin, P. S. Kop’ev and A. R. Kovsh. Their work appears in journals such as Applied Physics Letters, Electronics Letters, Physical review. B, Condensed matter, Journal of Lightwave Technology and IEEE Journal of Selected Topics in Quantum Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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