Ü. Özgür

5.0k total citations · 1 hit paper
143 papers, 4.1k citations indexed

About

Ü. Özgür is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, Ü. Özgür has authored 143 papers receiving a total of 4.1k indexed citations (citations by other indexed papers that have themselves been cited), including 92 papers in Condensed Matter Physics, 82 papers in Electrical and Electronic Engineering and 66 papers in Materials Chemistry. Recurrent topics in Ü. Özgür's work include GaN-based semiconductor devices and materials (92 papers), Ga2O3 and related materials (47 papers) and ZnO doping and properties (46 papers). Ü. Özgür is often cited by papers focused on GaN-based semiconductor devices and materials (92 papers), Ga2O3 and related materials (47 papers) and ZnO doping and properties (46 papers). Ü. Özgür collaborates with scholars based in United States, Lithuania and Türkiye. Ü. Özgür's co-authors include H. Morkoç̌, H. Morkoç, Henry O. Everitt, Yahya Alivov, V. Avrutin, Xianfeng Ni, S. Doğan, Ryoko Shimada, Qian Fan and Jinqiao Xie and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Ü. Özgür

132 papers receiving 4.0k citations

Hit Papers

Excitonic fine structure and recombination dynamics in si... 2004 2026 2011 2018 2004 200 400 600

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ü. Özgür United States 30 2.4k 2.0k 1.9k 1.8k 1.2k 143 4.1k
Michael Wraback United States 31 2.1k 0.9× 2.3k 1.2× 2.1k 1.1× 2.1k 1.2× 1.3k 1.1× 168 4.5k
J. Zúñiga‐Pérez France 37 2.4k 1.0× 789 0.4× 1.5k 0.8× 1.4k 0.8× 1.1k 1.0× 146 3.8k
Y.K. Su Taiwan 33 1.9k 0.8× 2.5k 1.2× 1.9k 1.0× 1.1k 0.6× 1.2k 1.1× 145 3.9k
Yan‐Kuin Su Taiwan 29 1.5k 0.6× 1.1k 0.6× 1.8k 1.0× 947 0.5× 564 0.5× 174 2.9k
S. J. Chua Singapore 32 2.3k 0.9× 1.3k 0.7× 2.1k 1.1× 1.2k 0.6× 903 0.8× 174 3.7k
T. G. Holesinger United States 35 2.1k 0.9× 2.5k 1.2× 820 0.4× 1.1k 0.6× 526 0.5× 127 4.0k
Travis J. Anderson United States 37 2.4k 1.0× 2.4k 1.2× 3.2k 1.7× 1.4k 0.8× 651 0.6× 260 4.7k
Cheolsoo Sone South Korea 33 2.5k 1.0× 3.1k 1.6× 1.7k 0.9× 1.2k 0.7× 1.5k 1.3× 89 4.7k
Jianchang Yan China 30 1.4k 0.6× 1.7k 0.8× 1.2k 0.6× 1.3k 0.7× 804 0.7× 141 3.0k
M. E. Hawley United States 27 3.0k 1.2× 1.3k 0.6× 1.0k 0.5× 2.4k 1.3× 451 0.4× 94 4.2k

Countries citing papers authored by Ü. Özgür

Since Specialization
Citations

This map shows the geographic impact of Ü. Özgür's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ü. Özgür with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ü. Özgür more than expected).

Fields of papers citing papers by Ü. Özgür

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ü. Özgür. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ü. Özgür. The network helps show where Ü. Özgür may publish in the future.

Co-authorship network of co-authors of Ü. Özgür

This figure shows the co-authorship network connecting the top 25 collaborators of Ü. Özgür. A scholar is included among the top collaborators of Ü. Özgür based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ü. Özgür. Ü. Özgür is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Smith, Bennett E., et al.. (2025). Overcoming Welding and Contact Degradation Failures Incurred by Complementary N/MEMS Logic Gate Structures Fabricated on SOI Wafers. Journal of Microelectromechanical Systems. 34(2). 231–239.
3.
Crittenden, Scott, et al.. (2024). Reduction in density of interface traps determined by C-V analysis in III-nitride-based MOSHFET structure. Applied Physics Letters. 124(11). 2 indexed citations
4.
Pate, D., et al.. (2024). Cryogenic DRIE processes for high-precision silicon etching in MEMS applications. Journal of Micromechanics and Microengineering. 34(7). 75008–75008. 5 indexed citations
6.
Smith, Bennett E., et al.. (2024). Electrical arc discharge in air between Pt-coated NEMS electrodes at nanoscale separation. Journal of Micromechanics and Microengineering. 34(6). 65001–65001. 1 indexed citations
7.
Smith, Bennett E., et al.. (2023). Multi-Gate In-Plane Actuated NEMS Relays for Effective Complementary Logic Gate Designs. Journal of Microelectromechanical Systems. 32(6). 604–611. 3 indexed citations
8.
Crittenden, Scott, Dongkyu Lee, V. Avrutin, et al.. (2023). MOCVD-grown β-Ga2O3 as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor. Crystals. 13(2). 231–231. 4 indexed citations
9.
Pate, D., et al.. (2023). Colloidal Synthesis of Homogeneous Ge1–xySiySnx Nanoalloys with Composition-Tunable Visible to Near-IR Optical Properties. Chemistry of Materials. 35(21). 9007–9018. 3 indexed citations
10.
Green, Ryan B., Kai Ding, V. Avrutin, Ü. Özgür, & Erdem Topsakal. (2022). Optically Transparent Antenna Arrays for the Next Generation of Mobile Networks. IEEE Open Journal of Antennas and Propagation. 3. 538–548. 7 indexed citations
12.
Reshchikov, M. A., Ü. Özgür, D. O. Demchenko, et al.. (2019). Unusual properties of the RY3 center in GaN. Physical review. B.. 100(4). 19 indexed citations
13.
Özgür, Ü., et al.. (2011). Field-assisted emission in AlGaN/GaN heterostructure field-effect transistors using low-frequency noise technique. Journal of Applied Physics. 109(8). 20 indexed citations
14.
Wu, M., Jacob H. Leach, X. Ni, et al.. (2010). InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 28(5). 908–911. 9 indexed citations
15.
Özgür, Ü., et al.. (2010). Ballistic transport in InGaN-based LEDs: impact on efficiency. Semiconductor Science and Technology. 26(1). 14022–14022. 25 indexed citations
16.
Ni, X., Ü. Özgür, H. Morkoç̌, Z. Liliental‐Weber, & Henry O. Everitt. (2007). Epitaxial lateral overgrowth of a-plane GaN by metalorganic chemical vapor deposition. Journal of Applied Physics. 102(5). 25 indexed citations
17.
Alivov, Ya. I., Ü. Özgür, S. Doğan, et al.. (2005). Photoresponse of n-ZnO∕p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy. Applied Physics Letters. 86(24). 130 indexed citations
18.
Özgür, Ü., Henry O. Everitt, S. Keller, & Steven P. DenBaars. (2003). Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells. Applied Physics Letters. 82(9). 1416–1418. 14 indexed citations
19.
Özgür, Ü., Chang‐Won Lee, & Henry O. Everitt. (2000). Control of Coherent Acoustic Phonons in InGaN Multiple Quantum Wells. arXiv (Cornell University). 1 indexed citations
20.
Bergmann, Michael, Ü. Özgür, H. C. Casey, & Henry O. Everitt. (2000). Ultrafast optical measurements on InGaN multiple quantum wells. APS March Meeting Abstracts.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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