Vera Prozheeva

404 total citations
13 papers, 341 citations indexed

About

Vera Prozheeva is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Vera Prozheeva has authored 13 papers receiving a total of 341 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 7 papers in Electronic, Optical and Magnetic Materials and 7 papers in Materials Chemistry. Recurrent topics in Vera Prozheeva's work include Semiconductor materials and devices (12 papers), Ga2O3 and related materials (7 papers) and GaN-based semiconductor devices and materials (5 papers). Vera Prozheeva is often cited by papers focused on Semiconductor materials and devices (12 papers), Ga2O3 and related materials (7 papers) and GaN-based semiconductor devices and materials (5 papers). Vera Prozheeva collaborates with scholars based in Finland, United States and Germany. Vera Prozheeva's co-authors include Filip Tuomisto, Ilja Makkonen, Holger von Wenckstern, H. Helava, Michał Boćkowski, Marius Grundmann, A. Usikov, T. H. Myers, M. A. Reshchikov and H. Teisseyre and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Vera Prozheeva

13 papers receiving 337 citations

Peers

Countries citing papers authored by Vera Prozheeva

Since Specialization

Citations

This map shows the geographic impact of Vera Prozheeva's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Vera Prozheeva with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Vera Prozheeva more than expected).

Fields of papers citing papers by Vera Prozheeva

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Vera Prozheeva. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Vera Prozheeva. The network helps show where Vera Prozheeva may publish in the future.

Co-authorship network of co-authors of Vera Prozheeva

This figure shows the co-authorship network connecting the top 25 collaborators of Vera Prozheeva. A scholar is included among the top collaborators of Vera Prozheeva based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Vera Prozheeva. Vera Prozheeva is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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13 of 13 papers shown

#	Work	Indexed citations
1	TiSr antisite: An abundant point defect in SrTiO3 2020 ·Journal of Applied Physics ·(unknown), Vera Prozheeva, Ilja Makkonen, Christo Guguschev, T. Markurt, Matthias Bickermann, Filip Tuomisto	12
2	Interfacial N Vacancies in GaN/(Al,Ga)N/GaN Heterostructures 2020 ·Physical Review Applied ·Vera Prozheeva, Ilja Makkonen, Haoran Li, S. Keller, Umesh K. Mishra, Filip Tuomisto	26
3	Split Ga vacancies and the unusually strong anisotropy of positron annihilation spectra in β−Ga2O3 2020 ·Physical review. B. ·(unknown), Vera Prozheeva, (unknown), Ilja Makkonen, (unknown), Joel B. Varley, Filip Tuomisto	45
4	Ga vacancies and electrical compensation in β-Ga2O3 thin films studied with positron annihilation spectroscopy 2019 ·Aaltodoc (Aalto University) ·Ilja Makkonen, (unknown), Vera Prozheeva, G. Wagner, M. Baldini, Filip Tuomisto	7
5	Structural, optical, and electrical properties of orthorhombic κ-(InxGa1−x)2O3 thin films 2019 ·APL Materials ·Anna Hassa, Holger von Wenckstern, Daniel Splith, Chris Sturm, Max Kneiß, Vera Prozheeva, Marius Grundmann	37
6	Unusual properties of the RY3 center in GaN 2019 ·Physical review. B. ·M. A. Reshchikov, (unknown), Ü. Özgür, D. O. Demchenko, J. D. McNamara, Vera Prozheeva, Filip Tuomisto, H. Helava, A. Usikov, Yu.N. Makarov	19
7	Effects of alloy composition and Si-doping on vacancy defect formation in (InxGa1–x)2O3 thin films 2018 ·Journal of Applied Physics ·Vera Prozheeva, (unknown), Holger von Wenckstern, Marius Grundmann, Filip Tuomisto	13
8	Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites 2017 ·Physical Review Letters ·Filip Tuomisto, Vera Prozheeva, Ilja Makkonen, T. H. Myers, Michał Boćkowski, H. Teisseyre	45
9	Radiation-induced alloy rearrangement in InxGa1−xN 2017 ·Applied Physics Letters ·Vera Prozheeva, Ilja Makkonen, R. Cuscó, L. Artús, A. Dadgar, F. Plazaola, Filip Tuomisto	11
10	Evaluation of the concentration of point defects in GaN 2017 ·Scientific Reports ·M. A. Reshchikov, A. Usikov, H. Helava, Yu.N. Makarov, Vera Prozheeva, Ilja Makkonen, Filip Tuomisto, Jacob H. Leach, Kevin Udwary	58
11	Subsurface damage in polishing–annealing processed ZnO substrates 2017 ·Materials Science in Semiconductor Processing ·Vera Prozheeva, K. M. Johansen, (unknown), A. Zubiaga, Lasse Vines, (unknown), Filip Tuomisto	5
12	Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In₂O₃ and SnO₂ 2016 ·Journal of Physics Condensed Matter ·Ilja Makkonen, (unknown), Vera Prozheeva, Filip Tuomisto	59
13	Cation vacancies and electrical compensation in Sb-doped thin-film SnO₂and ZnO 2015 ·Semiconductor Science and Technology ·E. Korhonen, Vera Prozheeva, Filip Tuomisto, Oliver Bierwagen, James S. Speck, Mark E. White, Zbigniew Galazka, (unknown), N. Izyumskaya, V. Avrutin, Ümit Özgür, H. Morkoç̌	4

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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