M. A. Reshchikov
Impact in
- Condensed Matter Physics top 0.1%
- GaN-based semiconductor devices and materials
-
- Ga2O3 and related materials
Papers in
-
- GaN-based semiconductor devices and materials 178
-
- Ga2O3 and related materials 138
- Co-authors
- H. Morkoç̌V. AvrutinÜmit ÖzgürAli TekeS. DoğanYa. I. AlivovD. O. DemchenkoRoman Y. Korotkov
- Journals
- Journal of Applied Physics (24 papers)Applied Physics Letters (23 papers)Physica B Condensed Matter (14 papers)Physical review. B. (11 papers)physica status solidi (b) (9 papers)
- Partner nations
- United StatesSouth KoreaRussia
In The Last Decade
M. A. Reshchikov
195 papers receiving 15.7k citations
Hit Papers
Peers
Comparison fields: 5 of 107
- Condensed Matter Physics 5.8k
- Electronic, Optical and Magnetic Materials 7.3k
- Materials Chemistry 12.8k
- Electrical and Electronic Engineering 7.6k
- Acoustics and Ultrasonics 55
Countries citing papers authored by M. A. Reshchikov
This map shows the geographic impact of M. A. Reshchikov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. A. Reshchikov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. A. Reshchikov more than expected).
Fields of papers citing papers by M. A. Reshchikov
This network shows the impact of papers produced by M. A. Reshchikov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. A. Reshchikov. The network helps show where M. A. Reshchikov may publish in the future.
Co-authors
The 25 scholars most cited alongside M. A. Reshchikov, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2025 | 2 | |
| 2 | 2025 | 1 | |
| 3 | 2024 | 4 | |
| 4 | 2024 | 3 | |
| 5 | 2023 | 10 | |
| 6 | 2023 | 5 | |
| 7 | 2022 | 21 | |
| 8 | 2022 | 10 | |
| 9 | 2021 | 15 | |
| 10 | 2020 | 20 | |
| 11 | 2019 | 19 | |
| 12 | 2018 | 58 | |
| 13 | 2017 | 58 | |
| 14 | 2016 | 41 | |
| 15 | A comprehensive review of ZnO materials and devices Hit paper breakdown → | 2005 | 9660 |
| 16 | 2005 | 6 | |
| 17 | 2004 | 35 | |
| 18 | Optical and piezospectroscopic properties and the structure of gallium-vacancy-silicon complexes in n-type GaAs: Comparison with gallium-vacancy-tin complexes | 1996 | 2 |
| 19 | Effect of elastic-force nonlinearity and the charge state on the type of equilibrium distortion of defects whose initial electron state has a t 2 symmetry | 1995 | 0 |
| 20 | Investigation of the V Ga Sn Ga complex in GaAs by the polarization photoluminescence and piezospectroscopic methods. I. Structure of the complex and its reorientation under low uniaxial pressures | 1993 | 0 |
About M. A. Reshchikov
M. A. Reshchikov is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering, having authored 204 papers that have together received 16.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (178 papers), Ga2O3 and related materials (138 papers), ZnO doping and properties (114 papers), Semiconductor materials and devices (43 papers), Semiconductor Quantum Structures and Devices (35 papers), Metal and Thin Film Mechanics (10 papers), Photocathodes and Microchannel Plates (10 papers) and Semiconductor materials and interfaces (8 papers). The work is most often cited by research in Condensed Matter Physics (5.8k citations), Electronic, Optical and Magnetic Materials (7.3k citations), Materials Chemistry (12.8k citations), Electrical and Electronic Engineering (7.6k citations) and Acoustics and Ultrasonics (55 citations). M. A. Reshchikov has collaborated with scholars based in United States, South Korea and Russia. Frequent co-authors include H. Morkoç̌, V. Avrutin, Ümit Özgür, Ali Teke, S. Doğan, Ya. I. Alivov, D. O. Demchenko, Roman Y. Korotkov, Bruce W. Wessels and A. A. Baski. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Physica B Condensed Matter, Physical review. B. and physica status solidi (b).
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.