M. Schurman

2.0k citations

62 papers · 1.7k indexed · h-index 21

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 56
- GaN-based semiconductor devices and materials 56
Electronic, Optical and Magnetic Materials 22
- Ga2O3 and related materials 22

Co-authors: Ian T. Ferguson R. A. Stall S. J. Pearton R. F. Karlicek J. Ramer Fred H. Pollak John C. Carrano Joe C. Campbell
Journals: Applied Physics Letters (16 papers)IEEE Journal of Quantum Electronics (3 papers)MRS Internet Journal of Nitride Semiconductor Research (2 papers)Journal of Applied Physics (2 papers)Journal of Crystal Growth (2 papers)
Partner nations: United States Netherlands Singapore

In The Last Decade

M. Schurman

56 papers receiving 1.6k citations

Peers

Countries citing papers authored by M. Schurman

Since Specialization

Citations

This map shows the geographic impact of M. Schurman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Schurman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Schurman more than expected).

Fields of papers citing papers by M. Schurman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Schurman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Schurman. The network helps show where M. Schurman may publish in the future.

Co-authorship network

The 25 scholars most cited alongside M. Schurman, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Schurman Line = papers co-authored together M. Schurman links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Phase separation in bulk InGaN and quantum wells grown by low pressure MOCVD C. A. Tran, R. F. Karlicek, M. Schurman, T. Salagaj, Amanda L. Thompson, R. A. Stall	2002	0
2	Cathodoluminescence of Lateral Epitaxial Overgrowth GaN: Dependencies on Excitation Conditions MRS Proceedings ·G. S. Cargill, Eva M. Campo, Lanping Yue, J. Ramer, M. Schurman, Ian T. Ferguson	2000	2
3	Low dark current GaN avalanche photodiodes IEEE Journal of Quantum Electronics ·Bo Yang, T. Li, Aneta Paczula, C.J. Collins, S. Wang, John C. Carrano, Russell D. Dupuis, Joe C. Campbell, M. Schurman, Ian T. Ferguson	2000	45
4	XRD and Optical Characterisation of GaN and Associated Substrate Materials Materials science forum ·Mahomed Fouad Said, T W Ryan, M. Schurman, Ian T. Ferguson	2000	2
5	Analysis of external quantum efficiencies of GaN homojunction p-i-n ultraviolet photodetectors IEEE Journal of Quantum Electronics ·Ting Li, John C. Carrano, Pranav Balasubramanian, M. Schurman, Ian T. Ferguson	1999	15
6	Photoluminescence and Raman Scattering Characterization of GaN, InGaN and AlGaN Films Using a UV Excitation Raman-Photoluminescence Microscope Materials science forum ·Zhe Chuan Feng, M. Schurman, C. A. Tran, T. Salagaj, Priyanka Malvankar, Ian T. Ferguson, R. A. Stall, Chris Dyer, Kenneth P. J. Williams, G. D. Pitt	1998	3
7	Growth and characterization of III-N semiconductor based quantum well structures by organometallic vapor phase epitaxy PhDT ·M. Schurman	1997	0
8	Growth of GaN blue LEDs with in situ growth monitoring III-Vs Review ·R. F. Karlicek, M. Schurman, C. A. Tran, T. Salagaj, 孙玲莉, R. A. Stall	1997	1
9	High Pressure Study of III-Nitrides and Related Heterostructures MRS Proceedings ·W. Shan, Joel W. Ager, W. Walukiewicz, E. E. Häller, B. D. Little, J. J. Song, B. Goldenberg, Zhe Chuan Feng, M. Schurman, R. A. Stall	1997	0
10	Dielectrics for GaN Based MIS-Diodes MRS Proceedings ·F. Ren, C. R. Abernathy, J. D. MacKenzie, F. Ren, S. J. Pearton, M. Hong, Rodrigo Souza Pereira Lopes, M. Schurman, Albert G. Baca, R. J. Shul	1997	4
11	Temperature dependence of energy gap in GaN thin film studied by thermomodulation Applied Physics Letters ·Yuli Li, Y. Lu, Hao Shen, Sonu Yadav, 稔夫木下, M. Schurman, L. A. Koszi, R. A. Stall	1997	20
12	Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN Journal of Electronic Materials ·Chawon Hwang, M. Schurman, W. E. Mayo, Ratna Sunil Buradagunta, R. A. Stall, T. Salagaj	1997	61
13	The study of nonlinear optical effects of GaN and AlGaN epitaxial films O. Ruiz, Z Adeli, Yanhua Shih, M. Schurman, Zhengchun Peng, R. A. Stall	1996	0
14	The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor MRS Internet Journal of Nitride Semiconductor Research ·Sally Mohamed Farid Mahmoud, M. Schurman, Zhe Chuan Feng, R. F. Karlicek, T. Salagaj, C. A. Tran, R. A. Stall	1996	2
15	Effect of shroud flow on high quality InxGa1−xN deposition in a production scale multi-wafer-rotating-disc reactor Journal of Electronic Materials ·C. YUAN, T. Salagaj, Ts Yordanov, R. A. Stall, M. Schurman, Chawon Hwang, Yuli Li, W. E. Mayo, Yicheng Lu, S. Krishnankutty, R. M. Kolbas	1996	8
16	Inductively coupled plasma etching of GaN Applied Physics Letters ·R. J. Shul, G McClellan, S.A. Casalnuovo, D. J. Rieger, S. J. Pearton, C. Constantine, C. Barratt, R. F. Karlicek, Cao Vinh Tran, M. Schurman	1996	178
17	Photoluminescence and Sims Studies of Hydrogen Passivation of Mg-Doped P-Type Gallium Nitride MRS Proceedings ·Yuli Li, Yuangang Lu, H. Shen, Michael Wraback, Chawon Hwang, M. Schurman, W. E. Mayo, T. Salagaj, R. A. Stall	1995	5
18	The Role of Impurities in LP-MOCVD Grown Gallium Nitride MRS Proceedings ·Chawon Hwang, Yuli Li, M. Schurman, W. E. Mayo, Yi‐Hsuan Lu, R. A. Stall	1995	3
19	Investigation of n- and p-type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactor Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Chris Yuan, T. Salagaj, A. Gurary, A. G. Thompson, Ts Yordanov, R. A. Stall, Chawon Hwang, M. Schurman, 上原元樹, W. E. Mayo, Yuangang Lu, S. Krishnankutty, I. K. Shmagin, R. M. Kolbas, S. J. Pearton	1995	28
20	Line strengths for Δv3=1 transitions in isotopic CS2 species with a stabilized tunable diode laser Journal of Quantitative Spectroscopy and Radiative Transfer ·M. Schurman, Vanja Dunjko, S. L. Goldstein, Mustapha Ammou-Chokroum, A. W. Mantz	1994	8

About M. Schurman

M. Schurman is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Atomic and Molecular Physics, and Optics and Mechanics of Materials, having authored 62 papers that have together received 1.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (56 papers), Ga2O3 and related materials (22 papers), Semiconductor materials and devices (21 papers), Semiconductor Quantum Structures and Devices (15 papers), Metal and Thin Film Mechanics (12 papers), Photocathodes and Microchannel Plates (11 papers), ZnO doping and properties (9 papers) and Optical Coatings and Gratings (4 papers). The work is most often cited by research in Condensed Matter Physics (1.4k citations), Electronic, Optical and Magnetic Materials (675 citations), Atomic and Molecular Physics, and Optics (514 citations), Electrical and Electronic Engineering (776 citations) and Materials Chemistry (626 citations). M. Schurman has collaborated with scholars based in United States, Netherlands and Singapore. Frequent co-authors include Ian T. Ferguson, R. A. Stall, S. J. Pearton, R. F. Karlicek, J. Ramer, Fred H. Pollak, John C. Carrano, Joe C. Campbell, F. Ren and M. Hong. Their work appears in journals such as Applied Physics Letters, IEEE Journal of Quantum Electronics, MRS Internet Journal of Nitride Semiconductor Research, Journal of Applied Physics and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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