J. Holst

477 citations

23 papers · 397 indexed · h-index 10

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 23
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 8
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 15
- Strong Light-Matter Interactions 1
Materials Chemistry
- ZnO doping and properties 6
Electrical and Electronic Engineering
- Semiconductor materials and devices 5
Biomedical Engineering
- Nanowire Synthesis and Applications 5
- Acoustic Wave Resonator Technologies 1

Co-authors: A. Hoffmann L. Eckey I. Broser F. Bertram M. Heuken Oliver Schön K. Lischka B. Schineller
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters (4 papers)physica status solidi (b) (3 papers)Journal of Crystal Growth (2 papers)
Partner nations: Germany Japan Russia

In The Last Decade

J. Holst

23 papers receiving 389 citations

Peers

Countries citing papers authored by J. Holst

Since Specialization

Citations

This map shows the geographic impact of J. Holst's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Holst with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Holst more than expected).

Fields of papers citing papers by J. Holst

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Holst. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Holst. The network helps show where J. Holst may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. Holst, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Holst Line = papers co-authored together J. Holst links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	The origin of the PL photoluminescence Stokes shift in ternary group‐III nitrides: field effects and localization Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·M. Straßburg,A. Hoffmann,J. Holst,J. Christen,T. Riemann,F. Bertram,Peter Fischer	2003	11
2	Epitaxy on GaN bulk crystals Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·M. Leszczyński,P. Prystawko,R. Czernecki,Paola Gallego Toro,P. Perlin,P. Wiśniewski,C. Skierbiszewski,T. Suski,G. Nowak,Amit W Chandankhede,J. Holst,I. Grzegory,S. Porowski	2001	1
3	Lasing in Vertical Direction in Structures with InGaN Quantum Dots physica status solidi (a) ·I. L. Krestnikov,A. V. Sakharov,W. V. Lundin,A. Usikov,A. F. Tsatsul’nikov,N. N. Ledentsov,Zh. I. Alfërov,I. P. Soshnikov,Dagmar Gerthsen,中山恵理,J. Holst,A. Hoffmann,D. Bimberg	2000	2
4	Time-resolved micro-photoluminescence of epitaxial laterally overgrown GaN Journal of Luminescence ·A. Kaschner,J. Holst,A. Hoffmann,I. Broser,Peter Fischer,F. Bertram,T. Riemann,J. Christen,K. Hiramatsu,T. Shibata,Nobuhiko Sawaki	2000	3
5	The origin of optical gain in cubic InGaN grown by molecular beam epitaxy Applied Physics Letters ·J. Holst,Amin Sabori,Thierry Epicier,F. Bertram,T. Riemann,J. Christen,T. Frey,D. J. As,D. Schikora,K. Lischka	2000	30
6	Impact of Structural Properties on the Mechanisms of Optical Amplification in Cubic GaInN physica status solidi (b) ·J. Holst,A. Hoffmann,I. Broser,Thierry Epicier,F. Bertram,T. Riemann,J. Christen,T. Frey,D. J. As,D. Schikora,K. Lischka	1999	8
7	Impact of the ZnO buffer on the optical properties of GaN: time resolved micro-photoluminescence Materials Science and Engineering B ·A. Hoffmann,J. Holst,A. Kaschner,H. Siegle,J. Christen,Peter Fischer,F. Bertram,K. Hiramatsu	1999	4
8	Optical Properties of Structures with Single and Multiple InGaN Insertions in a GaN Matrix physica status solidi (b) ·A. V. Sakharov,W. V. Lundin,I. L. Krestnikov,V. A. Semenov,A. Usikov,A. F. Tsatsul’nikov,Yu. G. Musikhin,М. В. Байдакова,Zh. I. Alfërov,N. N. Ledentsov,J. Holst,A. Hoffmann,D. Bimberg,I. P. Soshnikov,Dagmar Gerthsen	1999	14
9	Photoluminescence and Gain of MBE Grown Cubic InxGa1—xN/GaN Heterostructures physica status solidi (b) ·T. Frey,D. J. As,D. Schikora,K. Lischka,J. Holst,A. Hoffmann	1999	7
10	Correlation between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy MRS Proceedings ·A. Kaschner,J. Holst,Chen Jingsheng,A. Hoffmann,F. Bertram,T. Riemann,Thierry Epicier,Peter Fischer,J. Christen,R. Averbeck,H. Riechert	1999	1
11	Time-resolved microphotoluminescence of epitaxial laterally overgrown GaN Applied Physics Letters ·J. Holst,A. Kaschner,A. Hoffmann,Peter Fischer,F. Bertram,T. Riemann,J. Christen,K. Hiramatsu,T. Shibata,Nobuhiko Sawaki	1999	13
12	Optical gain and stimulated emission of cleaved cubic gallium nitrite Applied Physics Letters ·J. Holst,A. Hoffmann,I. Broser,B. Schöttker,D. J. As,D. Schikora,K. Lischka	1999	7
13	Mechanisms of optical gain in cubic gallium nitrite Applied Physics Letters ·J. Holst,L. Eckey,A. Hoffmann,I. Broser,B. Schöttker,D. J. As,D. Schikora,K. Lischka	1998	39
14	Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers Journal of Applied Physics ·L. Eckey,Chen Jingsheng,J. Holst,A. Hoffmann,A. Kaschner,H. Siegle,C. Thomsen,B. Schineller,K. Heime,M. Heuken,Oliver Schön,R. Beccard	1998	85
15	Compensation effects in Mg-doped GaN epilayers Journal of Crystal Growth ·L. Eckey,Chen Jingsheng,J. Holst,A. Hoffmann,B. Schineller,K. Heime,M. Heuken,Oliver Schön,R. Beccard	1998	32
16	On the nature of the 3.41 eV luminescence in hexagonal GaN Journal of Crystal Growth ·Stefan Fischer,G. Steude,D.M. Hofmann,F. Kurth,F. Anderš,Jiatian Luo,Bertrand Meyer,F. Bertram,Michael Schmidt,J. Christen,L. Eckey,J. Holst,A. Hoffmann,B. Mensching,B. Rauschenbach	1998	68
17	Dynamical study of the yellow luminescence band in GaN Solid-State Electronics ·A. Hoffmann,L. Eckey,Peter E. Maxim,J. Holst,R. Heitz,D.M. Hofmann,D. Kovalev,Amélia Augusta Friche de Lima,D. Volm,B. K. Meyer,Theeradetch Detchprohm,Kunihide Hiramatsu,Hiroshi Amano,Isamu Akasaki	1997	31
18	Photoluminescence and optical gain in highly excited GaN Journal of Luminescence ·L. Eckey,J. Holst,Abdulwahab Al-Yahya,I. Broser,Hiroshi Amano,Isamu Akasaki,Theeradetch Detchprohm,Kunihide Hiramatsu	1997	7
19	Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN MRS Internet Journal of Nitride Semiconductor Research ·J. Holst,L. Eckey,A. Hoffmann,I. Broser,Hiroshi Amano,Isamu Akasaki	1997	15
20	Optical-Gain Measurements on GaN and Al_x Ga_1-xN Heterostructures MRS Proceedings ·L. Eckey,J. Holst,Svetlana Kvesko,A. Hoffmann,I. Broser,O. Ambacher,M. Stutzmann,Hiroshi Amano,Isamu Akasaki	1997	2

About J. Holst

J. Holst is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Biomedical Engineering and Materials Chemistry, having authored 23 papers that have together received 397 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (23 papers), Semiconductor Quantum Structures and Devices (15 papers), Ga2O3 and related materials (8 papers), ZnO doping and properties (6 papers), Nanowire Synthesis and Applications (5 papers), Semiconductor materials and devices (5 papers), Acoustic Wave Resonator Technologies (1 paper) and Strong Light-Matter Interactions (1 paper). The work is most often cited by research in Condensed Matter Physics (359 citations), Electronic, Optical and Magnetic Materials (202 citations), Atomic and Molecular Physics, and Optics (179 citations), Materials Chemistry (186 citations) and Electrical and Electronic Engineering (111 citations). J. Holst has collaborated with scholars based in Germany, Japan and Russia. Frequent co-authors include A. Hoffmann, L. Eckey, I. Broser, F. Bertram, M. Heuken, Oliver Schön, K. Lischka, B. Schineller, D. Schikora and D. J. As. Their work appears in journals such as Applied Physics Letters, physica status solidi (b), Journal of Crystal Growth, MRS Internet Journal of Nitride Semiconductor Research and Journal of Luminescence.

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