D. S. Poloskin

483 total citations
68 papers, 398 citations indexed

About

D. S. Poloskin is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, D. S. Poloskin has authored 68 papers receiving a total of 398 indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Electrical and Electronic Engineering, 36 papers in Atomic and Molecular Physics, and Optics and 27 papers in Materials Chemistry. Recurrent topics in D. S. Poloskin's work include Silicon and Solar Cell Technologies (32 papers), Semiconductor materials and interfaces (24 papers) and Silicon Nanostructures and Photoluminescence (19 papers). D. S. Poloskin is often cited by papers focused on Silicon and Solar Cell Technologies (32 papers), Semiconductor materials and interfaces (24 papers) and Silicon Nanostructures and Photoluminescence (19 papers). D. S. Poloskin collaborates with scholars based in Russia, Germany and United States. D. S. Poloskin's co-authors include V. V. Emtsev, V. V. Emtsev, G. A. Oganesyan, N. M. Shmidt, A. S. Usikov, L. S. Vlasenko, V. Yu. Davydov, W. V. Lundin, Marina P. Vlasenko and R. Laiho and has published in prestigious journals such as Journal of Applied Physics, Physical Review B and Nanotechnology.

In The Last Decade

D. S. Poloskin

63 papers receiving 376 citations

Peers

D. S. Poloskin

EEE

AMPO

CMP

EOMM

B. M. Arora India

P. Bauer Germany

Zhongming Zheng China

M. Mannoh Japan

Patrick Martin France

Yuzaburoh Ban Japan

H. Fitouri Tunisia

W. Wilkening Germany

G. F. McLane United States

H. Tews Germany

B. M. Arora India

D. S. Poloskin

342 ×1.4

EEE

279 ×1.5

AMPO

114 ×0.7

CMP

166 ×1.2

46 ×0.5

EOMM

Citations per year, relative to D. S. Poloskin D. S. Poloskin (= 1×) peers B. M. Arora

Countries citing papers authored by D. S. Poloskin

Since Specialization

Citations

This map shows the geographic impact of D. S. Poloskin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. S. Poloskin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. S. Poloskin more than expected).

Fields of papers citing papers by D. S. Poloskin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. S. Poloskin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. S. Poloskin. The network helps show where D. S. Poloskin may publish in the future.

Co-authorship network of co-authors of D. S. Poloskin

This figure shows the co-authorship network connecting the top 25 collaborators of D. S. Poloskin. A scholar is included among the top collaborators of D. S. Poloskin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. S. Poloskin. D. S. Poloskin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Emtsev, V. V., et al.. (2024). Bismuth-related defects in n-type silicon irradiated with protons: A comparison to similar defects formed under electron irradiation. Journal of Applied Physics. 136(10).

Карташова, А. П., et al.. (2023). Contribution of Zone Fluctuation Potential and Disordering of Heteroboundaries to the Decreased Efficiency of Nitride-Based Leds. Journal of Applied Spectroscopy. 90(1). 24–28. 1 indexed citations

Emtsev, V. V., et al.. (2022). Electron- and proton irradiation of strongly doped silicon of p-type: Formation and annealing of boron-related defects. Journal of Applied Physics. 131(12). 2 indexed citations

Bagraev, N. T., et al.. (2009). Quantum supercurrent and Andreev reflection in silicon nanostructures. Semiconductors. 43(11). 1455–1465. 4 indexed citations

Emtsev, V. V., et al.. (2009). Charge carrier removal rates in n-type silicon and silicon carbide subjected to electron and proton irradiation. Physica B Condensed Matter. 404(23-24). 4752–4754. 13 indexed citations

Hayashi, Hiroshi, et al.. (2009). Dynamic nuclear polarization of 29Si via spin S=1 centers in isotopically controlled silicon. Physica B Condensed Matter. 404(23-24). 5054–5056. 2 indexed citations

Emtsev, V. V., P. Ehrhart, K. V. Emtsev, D. S. Poloskin, & U. Dedek. (2006). Defect production in heavily doped n-Si irradiated with fast electrons at cryogenic temperatures. Physica B Condensed Matter. 376-377. 173–176. 2 indexed citations

Usikov, A., O. V. Kovalenkov, V. Ivantsov, et al.. (2004). P-type GaN epitaxial layers and AlGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE. MRS Proceedings. 831. 3 indexed citations

Kozub, V. I., et al.. (2004). Transition from strong to weak localization in the split-off impurity band in two-dimensional p-GaAs/AlGaAs structures. Journal of Experimental and Theoretical Physics Letters. 80(1). 30–34. 8 indexed citations

10.

Emtsev, V. V., et al.. (2003). Photoluminescence characterization of thermal defects in Czochralski grown silicon heat treated at 600°C. Physica B Condensed Matter. 340-342. 1018–1021. 1 indexed citations

11.

Emtsev, V. V., B. A. Andreev, V. Yu. Davydov, et al.. (2003). Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon. Physica B Condensed Matter. 340-342. 769–772. 7 indexed citations

12.

Vlasenko, L. S., et al.. (2001). Surface gettering of background impurities and defects in GaAs wafers. Semiconductors. 35(2). 177–180. 5 indexed citations

13.

Emtsev, V. V., V. Yu. Davydov, E. E. Häller, et al.. (2001). Radiation-induced defects in n-type GaN and InN. Physica B Condensed Matter. 308-310. 58–61. 26 indexed citations

14.

Davydov, Denis, V. V. Emtsev, A. А. Lebedev, et al.. (2001). Electron Traps in Undoped GaN Layers Subjected to Gamma-Irradiation and Annealing. Materials science forum. 353-356. 799–802. 4 indexed citations

15.

Emtsev, V. V., et al.. (1999). Impurity effects in silicon implanted with rare-earth ions. Physica B Condensed Matter. 273-274. 346–349. 3 indexed citations

16.

Shmidt, N. M., et al.. (1999). Surface Gettering Background Impurities and Defects in GaAs Plates. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 69-70. 279–284. 5 indexed citations

17.

Shmidt, N. M., V. V. Emtsev, I. L. Krestnikov, et al.. (1999). Effect of Annealing on Defects in As-Grown and γ-Ray Irradiated n-GaN Layers. physica status solidi (b). 216(1). 533–536. 32 indexed citations

18.

Emtsev, V. V., P. Ehrhart, D. S. Poloskin, & U. Dedek. (1999). Electron irradiation of heavily doped silicon: group-III impurity ion pairs. Physica B Condensed Matter. 273-274. 287–290. 4 indexed citations

19.

Astrova, E. V., et al.. (1996). Effect of γ irradiation on the properties of porous silicon. Semiconductors. 30(3). 279–282. 6 indexed citations

20.

Bagraev, N. T., et al.. (1985). Spin-dependent negative photoconductivity in silicon. Solid State Communications. 55(9). 791–793. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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