V. V. Kozlovski

692 total citations
56 papers, 548 citations indexed

About

V. V. Kozlovski is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, V. V. Kozlovski has authored 56 papers receiving a total of 548 indexed citations (citations by other indexed papers that have themselves been cited), including 54 papers in Electrical and Electronic Engineering, 29 papers in Atomic and Molecular Physics, and Optics and 3 papers in Condensed Matter Physics. Recurrent topics in V. V. Kozlovski's work include Silicon Carbide Semiconductor Technologies (48 papers), Semiconductor materials and interfaces (29 papers) and Silicon and Solar Cell Technologies (27 papers). V. V. Kozlovski is often cited by papers focused on Silicon Carbide Semiconductor Technologies (48 papers), Semiconductor materials and interfaces (29 papers) and Silicon and Solar Cell Technologies (27 papers). V. V. Kozlovski collaborates with scholars based in Russia, France and United States. V. V. Kozlovski's co-authors include A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina, M. E. Levinshteĭn, A. I. Veı̆nger, A. A. Lebedev, G. A. Oganesyan, S. L. Rumyantsev, John W. Palmour and Е. В. Богданова and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Physics D Applied Physics.

In The Last Decade

V. V. Kozlovski

52 papers receiving 517 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
V. V. Kozlovski Russia	12	508	209	71	29	27	56	548
K. Tone United States	14	478 0.9×	170 0.8×	96 1.4×	19 0.7×	48 1.8×	39	545
H. Bleichner Sweden	14	586 1.2×	176 0.8×	71 1.0×	22 0.8×	49 1.8×	34	606
Anatoly M. Strel’chuk Russia	14	672 1.3×	244 1.2×	103 1.5×	21 0.7×	54 2.0×	95	712
Marianne Etzelmüller Bathen Norway	12	379 0.7×	127 0.6×	192 2.7×	22 0.8×	67 2.5×	43	501
Aliekber Aktağ Türkiye	12	255 0.5×	170 0.8×	154 2.2×	17 0.6×	34 1.3×	22	344
M. K. Linnarsson Sweden	10	341 0.7×	115 0.6×	73 1.0×	68 2.3×	49 1.8×	17	408
Véronique Soulière France	11	312 0.6×	153 0.7×	122 1.7×	9 0.3×	68 2.5×	74	388
N.S. Savkina Russia	13	502 1.0×	175 0.8×	92 1.3×	14 0.5×	50 1.9×	76	538
T. J. Grasby United Kingdom	15	464 0.9×	224 1.1×	92 1.3×	37 1.3×	14 0.5×	28	512
Martin Delaigue France	12	244 0.5×	223 1.1×	43 0.6×	100 3.4×	21 0.8×	37	359

Countries citing papers authored by V. V. Kozlovski

Since Specialization

Citations

This map shows the geographic impact of V. V. Kozlovski's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. V. Kozlovski with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. V. Kozlovski more than expected).

Fields of papers citing papers by V. V. Kozlovski

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. V. Kozlovski. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. V. Kozlovski. The network helps show where V. V. Kozlovski may publish in the future.

Co-authorship network of co-authors of V. V. Kozlovski

This figure shows the co-authorship network connecting the top 25 collaborators of V. V. Kozlovski. A scholar is included among the top collaborators of V. V. Kozlovski based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. V. Kozlovski. V. V. Kozlovski is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Davydov, V. Yu., I. A. Eliseyev, Yu. É. Kitaev, et al.. (2024). Investigation of the Cr3+ Impurity Luminescence in Proton-Irradiated β-Ga2O3. Semiconductors. 58(1). 8–11.

Lebedev, A. А., et al.. (2021). Effect of high temperature irradiation with 15 MeV protons on characteristics of power SiC Schottky diodes. Solid-State Electronics. 181-182. 108009–108009. 6 indexed citations

Lebedev, A. А., et al.. (2021). Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation. Materials. 14(17). 4976–4976. 33 indexed citations

Lebedev, A. А., V. V. Kozlovski, M. E. Levinshteĭn, et al.. (2019). Effect of high energy (15 MeV) proton irradiation on vertical power 4H-SiC MOSFETs. Semiconductor Science and Technology. 34(4). 45004–45004. 11 indexed citations

Макаренко, Л. Ф., et al.. (2019). Formation of a Bistable Interstitial Complex in Irradiated p‐Type Silicon. physica status solidi (a). 216(17). 7 indexed citations

Lebedev, A. А., et al.. (2019). A Study of the Influence Exerted by Structural Defects on Photoluminescence Spectra in n-3C-SiC. Technical Physics Letters. 45(6). 557–559. 2 indexed citations

Lebedev, A. A., et al.. (2019). Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes. Semiconductors. 53(10). 1409–1413. 1 indexed citations

Kozlovski, V. V., et al.. (2018). Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers. Semiconductors. 52(3). 310–315. 2 indexed citations

Kozlovski, V. V., A. А. Lebedev, M. E. Levinshteĭn, S. L. Rumyantsev, & John W. Palmour. (2017). Impact of high energy electron irradiation on high voltage Ni/4H-SiC Schottky diodes. Applied Physics Letters. 110(8). 27 indexed citations

10.

Kozlovski, V. V., et al.. (2016). Effect of recoil atoms on radiation-defect formation in semiconductors under 1–10-MeV proton irradiation. Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques. 10(4). 693–697. 5 indexed citations

11.

Kozlovski, V. V., et al.. (2015). Role of the recoil atom energy in the formation of radiation-induced defects in semiconductors under electron bombardment. Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques. 9(2). 231–236. 7 indexed citations

12.

Ber, B. Ya., et al.. (2015). Radiation-stimulated photoluminescence in electron irradiated 4H-SiC. Journal of Physics D Applied Physics. 48(48). 485106–485106. 22 indexed citations

13.

Lebedev, A. A., M. G. Mynbaeva, Anatoly M. Strel’chuk, et al.. (2015). Radiation hardness of n-GaN schottky diodes. Semiconductors. 49(10). 1341–1343. 2 indexed citations

14.

Lebedev, A. А. & V. V. Kozlovski. (2014). Comparison of the radiation hardness of silicon and silicon carbide. Semiconductors. 48(10). 1293–1295. 8 indexed citations

15.

Emtsev, V. V., V. V. Kozlovski, A. А. Lebedev, et al.. (2012). Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type. Semiconductors. 46(4). 456–465. 30 indexed citations

16.

Lebedev, A. A., et al.. (2012). Annealing of radiation-compensated silicon carbide. Technical Physics Letters. 38(10). 910–912. 2 indexed citations

17.

Kozlovski, V. V., et al.. (2005). RADIATION DEFECT ENGINEERING. International Journal of High Speed Electronics and Systems. 15(1). 1–253. 10 indexed citations

18.

Kozlovski, V. V., et al.. (2004). Formation and study of buried SiC layers with a high content of radiation defects. Semiconductors. 38(10). 1176–1178. 2 indexed citations

19.

Lebedev, A. А., V. V. Kozlovski, N. B. Strokan, et al.. (2002). Radiation hardness of wide-gap semiconductors (using the example of silicon carbide). Semiconductors. 36(11). 1270–1275. 33 indexed citations

20.

Lebedev, A. А., et al.. (2000). Doping of n-type 6H–SiC and 4H–SiC with defects created with a proton beam. Journal of Applied Physics. 88(11). 6265–6271. 88 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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