S. Inaba

946 total citations
54 papers, 533 citations indexed

About

S. Inaba is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S. Inaba has authored 54 papers receiving a total of 533 indexed citations (citations by other indexed papers that have themselves been cited), including 53 papers in Electrical and Electronic Engineering, 7 papers in Biomedical Engineering and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S. Inaba's work include Semiconductor materials and devices (48 papers), Advancements in Semiconductor Devices and Circuit Design (47 papers) and Silicon Carbide Semiconductor Technologies (11 papers). S. Inaba is often cited by papers focused on Semiconductor materials and devices (48 papers), Advancements in Semiconductor Devices and Circuit Design (47 papers) and Silicon Carbide Semiconductor Technologies (11 papers). S. Inaba collaborates with scholars based in Japan and United States. S. Inaba's co-authors include Y. Toyoshima, Takaaki Tsunomura, Toshiro Hiramoto, Akio Nishida, Shiro Kamohara, Kiyoshi Takeuchi, Tohru Mogami, Kazuo Terada, K. Okano and K. Ishimaru and has published in prestigious journals such as Applied Physics Letters, IEEE Journal of Solid-State Circuits and IEEE Transactions on Electron Devices.

In The Last Decade

S. Inaba

54 papers receiving 490 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Inaba Japan 14 512 57 56 34 22 54 533
C. Kuo United States 5 499 1.0× 74 1.3× 29 0.5× 29 0.9× 19 0.9× 9 516
C. Ortolland Belgium 11 380 0.7× 55 1.0× 61 1.1× 21 0.6× 10 0.5× 37 392
Olivier Faynot France 15 821 1.6× 122 2.1× 27 0.5× 44 1.3× 24 1.1× 80 841
H. Abiko Japan 10 272 0.5× 74 1.3× 54 1.0× 16 0.5× 40 1.8× 26 287
Jenn-Gang Chern United States 7 420 0.8× 66 1.2× 45 0.8× 30 0.9× 23 1.0× 13 436
Rafael Rios United States 10 426 0.8× 108 1.9× 35 0.6× 37 1.1× 9 0.4× 18 440
F. Bénistant Singapore 10 260 0.5× 37 0.6× 55 1.0× 34 1.0× 10 0.5× 52 294
P. O’Neil United States 6 249 0.5× 25 0.4× 59 1.1× 74 2.2× 15 0.7× 14 268
Narain Arora Germany 8 566 1.1× 82 1.4× 41 0.7× 39 1.1× 23 1.0× 15 579
M. Inuishi Japan 13 539 1.1× 32 0.6× 75 1.3× 31 0.9× 64 2.9× 77 556

Countries citing papers authored by S. Inaba

Since Specialization
Citations

This map shows the geographic impact of S. Inaba's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Inaba with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Inaba more than expected).

Fields of papers citing papers by S. Inaba

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Inaba. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Inaba. The network helps show where S. Inaba may publish in the future.

Co-authorship network of co-authors of S. Inaba

This figure shows the co-authorship network connecting the top 25 collaborators of S. Inaba. A scholar is included among the top collaborators of S. Inaba based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Inaba. S. Inaba is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hokazono, A., et al.. (2011). 25-nm Gate Length nMOSFET With Steep Channel Profiles Utilizing Carbon-Doped Silicon Layers (A P-Type Dopant Confinement Layer). IEEE Transactions on Electron Devices. 58(5). 1302–1310. 7 indexed citations
2.
Kondo, Masaki, et al.. (2011). Advantage of Plasma Doping for Source/Drain Extension in Bulk Fin Field Effect Transistor. Japanese Journal of Applied Physics. 50(4S). 04DC15–04DC15. 8 indexed citations
3.
Kumar, A. Senthil, T. Mizutani, Takaaki Tsunomura, et al.. (2010). Origin of “current-onset voltage” variability in scaled MOSFETs. 1–2. 11 indexed citations
4.
Hiramoto, Toshiro, T. Mizutani, A. Senthil Kumar, et al.. (2010). Suppression of DIBL and current-onset voltage variability in intrinsic channel fully depleted SOI MOSFETs. 56. 1–2. 12 indexed citations
5.
Ohguro, T., et al.. (2009). Analysis of Fin width and temperature dependence of flicker noise for bulk-FinFET. 61–64. 4 indexed citations
6.
7.
8.
Kawasaki, H., S. Inaba, N. Aoki, et al.. (2007). FinFET Process and Integration Technology for High Performance LSI in 22 nm node and beyond. 3–8. 5 indexed citations
9.
Tsunomura, Takaaki, Akio Nishida, Kiyoshi Takeuchi, et al.. (2006). A new methodology for evaluating V T variability considering dopant depth profile. Symposium on VLSI Technology. 116–117. 2 indexed citations
10.
Goto, Masakazu, Seiji Inumiya, Masumi Saitoh, et al.. (2006). The study of mobility-tin, trade-off in deeply scaled high-k / metal gate devices and scaling design guideline for 22nm-node generation. Symposium on VLSI Technology. 214–215. 2 indexed citations
11.
Inaba, S., K. Okano, A. Kaneko, et al.. (2006). FinFET: the prospective multi-gate device for future SoC applications. 50–53. 5 indexed citations
12.
Fujiwara, M., T. Morooka, K. Ohuchi, et al.. (2006). Impact of BOX Scaling on 30 nm Gate Length FD SOI MOSFETs. 180–182. 21 indexed citations
13.
Inaba, S., et al.. (2006). Low-Power Logic Circuit and SRAM Cell Applications With Silicon on Depletion Layer CMOS (SODEL CMOS) Technology. IEEE Journal of Solid-State Circuits. 41(6). 1455–1462. 3 indexed citations
14.
Ishimaru, K., M. Takayanagi, T. Watanabe, et al.. (2006). Scaled CMOS with SiON and High-k. ECS Transactions. 2(2). 317–327. 2 indexed citations
15.
Kawasaki, Hikaru, K. Okano, A. Kaneko, et al.. (2006). Embedded Bulk FinFET SRAM Cell Technology with Planar FET Peripheral Circuit for hp32 nm Node and Beyond. 70–71. 34 indexed citations
16.
17.
Inaba, S., K. Miyano, A. Hokazono, et al.. (2004). SODEL FET: Novel Channel and Source/Drain Profile Engineering Schemes by Selective Si Epitaxial Growth Technology. IEEE Transactions on Electron Devices. 51(9). 1401–1408. 3 indexed citations
18.
Murthy, Ch. S. N., R. Rengarajan, O. Dokumaci, et al.. (2002). Nitrogen-induced transient enhanced diffusion of dopants. Applied Physics Letters. 80(15). 2696–2698. 7 indexed citations
19.
Inaba, S., Tomohisa Mizuno, M. Iwase, et al.. (1994). Inverter performance of 0.10 μm CMOS operating at room temperature. IEEE Transactions on Electron Devices. 41(12). 2399–2404. 9 indexed citations
20.
Toriumi, Akira, Toshiki Mizuno, Masayuki Takahashi, et al.. (1992). High Speed 0.1 μm CMOS Devices Operating at Room Temperature. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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