T. Melde

968 total citations
20 papers, 354 citations indexed

About

T. Melde is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications and Materials Chemistry. According to data from OpenAlex, T. Melde has authored 20 papers receiving a total of 354 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 6 papers in Computer Networks and Communications and 4 papers in Materials Chemistry. Recurrent topics in T. Melde's work include Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Advanced Memory and Neural Computing (7 papers). T. Melde is often cited by papers focused on Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Advanced Memory and Neural Computing (7 papers). T. Melde collaborates with scholars based in Germany, Austria and United States. T. Melde's co-authors include Thomas Mikolajick, Johannes Müller, U. Schröder, Ekaterina Yurchuk, Steve Knebel, Andrew Graham, Jonas Sundqvist, Martin Trentzsch, Stefan Dünkel and Sven Beyer and has published in prestigious journals such as IEEE Transactions on Electron Devices, Thin Solid Films and IEEE Electron Device Letters.

In The Last Decade

T. Melde

20 papers receiving 339 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
T. Melde Germany	8	342	192	18	7	6	20	354
N. K. Zous Taiwan	10	394 1.2×	87 0.5×	48 2.7×	9 1.3×	16 2.7×	37	400
Efraim Aloni Israel	5	487 1.4×	146 0.8×	42 2.3×	14 2.0×	22 3.7×	7	494
E. Lusky Israel	11	434 1.3×	142 0.7×	24 1.3×	8 1.1×	24 4.0×	15	437
A. Subirats Belgium	13	576 1.7×	164 0.9×	45 2.5×	15 2.1×	15 2.5×	33	589
D.E. Brown Australia	6	233 0.7×	101 0.5×	11 0.6×	18 2.6×	7 1.2×	15	252
D. Finzi Israel	4	473 1.4×	147 0.8×	40 2.2×	14 2.0×	39 6.5×	5	480
C.W. Jeong South Korea	6	130 0.4×	120 0.6×	22 1.2×	8 1.1×	6 1.0×	11	161
Y. Higashi Japan	10	246 0.7×	100 0.5×	4 0.2×	8 1.1×	4 0.7×	26	257
Xinlv Duan China	12	239 0.7×	77 0.4×	4 0.2×	29 4.1×	9 1.5×	27	247
G. Chen Singapore	6	310 0.9×	49 0.3×	11 0.6×	10 1.4×	10 1.7×	9	340

Countries citing papers authored by T. Melde

Since Specialization

Citations

This map shows the geographic impact of T. Melde's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Melde with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Melde more than expected).

Fields of papers citing papers by T. Melde

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Melde. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Melde. The network helps show where T. Melde may publish in the future.

Co-authorship network of co-authors of T. Melde

This figure shows the co-authorship network connecting the top 25 collaborators of T. Melde. A scholar is included among the top collaborators of T. Melde based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Melde. T. Melde is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Melde, T., et al.. (2021). Novel embedded single poly floating gate flash demonstrated in 22nm FDSOI technology. 1–4. 1 indexed citations

Breyer, Evelyn T., Halid Mulaosmanovic, Jens Trommer, et al.. (2020). Compact FeFET Circuit Building Blocks for Fast and Efficient Nonvolatile Logic-in-Memory. IEEE Journal of the Electron Devices Society. 8. 748–756. 38 indexed citations

Cagli, C., L. Perniola, F. Gaillard, et al.. (2019). Performance Improvement on HfO₂-Based 1T Ferroelectric NVM by Electrical Preconditioning. SPIRE - Sciences Po Institutional REpository. 1–4. 2 indexed citations

Breyer, Evelyn T., Halid Mulaosmanovic, Jens Trommer, et al.. (2019). Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory. 118–121. 15 indexed citations

Reis, Dayane, Suman Datta, Michael Niemier, et al.. (2019). Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits. 5(2). 103–112. 61 indexed citations

Yurchuk, Ekaterina, Johannes Müller, Steve Knebel, et al.. (2012). Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films. Thin Solid Films. 533. 88–92. 163 indexed citations

Melde, T., et al.. (2011). TaN and $\hbox{Al}_{2}\hbox{O}_{3}$ Sidewall Gate-Etch Damage Influence on Program, Erase, and Retention of Sub-50-nm TANOS nand Flash Memory Cells. IEEE Transactions on Electron Devices. 58(6). 1728–1734. 1 indexed citations

Melde, T., et al.. (2010). Analysis of TANOS Memory Cells With Sealing Oxide Containing Blocking Dielectric. IEEE Transactions on Electron Devices. 57(7). 1590–1596. 11 indexed citations

Vexler, M. I., et al.. (2010). Detailed physical simulation of program disturb mechanisms in Sub-50 nm NAND flash memory strings. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 261–264. 1 indexed citations

10.

Seidel, Konrad, Thomas J. J. Müller, Raik Hoffmann, et al.. (2009). Electrical analysis of unbalanced Flash memory array construction effects and their impact on performance and reliability. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 72–76. 2 indexed citations

11.

Seidel, Konrad, Raik Hoffmann, D. A. Lohr, et al.. (2009). Analysis of trap mechanisms responsible for Random Telegraph Noise and erratic programming on sub-50nm floating gate flash memories. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 67–71. 4 indexed citations

12.

Melde, T., Paul Jarman, M. Czernohorsky, et al.. (2009). Improvement of 48 nm TANOS NAND Cell Performance by Introduction of a Removable Encapsulation Liner. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 1–2. 2 indexed citations

13.

Jarman, Paul, M. Czernohorsky, Kati Biedermann, et al.. (2009). Improved high-temperature etch processing of high-k metal gate stacks in scaled TANOS memory devices. Microelectronic Engineering. 87(5-8). 1629–1633. 4 indexed citations

14.

Melde, T., et al.. (2009). Select Device Disturb Phenomenon in TANOS NAND Flash Memories. IEEE Electron Device Letters. 30(5). 568–570. 6 indexed citations

15.

Mueller, Thomas, T. Melde, M. Ackermann, et al.. (2008). Metal control gate for sub-30nm floating gate NAND memory. 1–4. 3 indexed citations

16.

Melde, T., et al.. (2008). Nitride Thickness Scaling Limitations in TANOS Charge Trapping Devices. 130–132. 11 indexed citations

17.

Melde, T., et al.. (2008). Anomalous Erase Behavior in Charge Trapping Memory Cells. 121–123. 3 indexed citations

18.

Melde, T., et al.. (2008). Accurate program simulation of TANOS charge trapping devices. Zenodo (CERN European Organization for Nuclear Research). 1–5. 5 indexed citations

19.

Mikolajick, Thomas, Michael Specht, N. Nagel, et al.. (2007). The Future of Charge Trapping Memories. 21. 1–4. 8 indexed citations

20.

Specht, Michael, Theresa Lutz, F. Hofmann, et al.. (2006). Multi-level p+ tri-gate SONOS NAND string arrays. 1–4. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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