Kensuke Ota

516 total citations
34 papers, 403 citations indexed

About

Kensuke Ota is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Kensuke Ota has authored 34 papers receiving a total of 403 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 9 papers in Biomedical Engineering and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Kensuke Ota's work include Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (25 papers) and Ferroelectric and Negative Capacitance Devices (16 papers). Kensuke Ota is often cited by papers focused on Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (25 papers) and Ferroelectric and Negative Capacitance Devices (16 papers). Kensuke Ota collaborates with scholars based in Japan, South Korea and Belgium. Kensuke Ota's co-authors include Masumi Saitoh, Shosuke Fujii, Jun Deguchi, Takao Marukame, Toshinori Numata, M. Yamaguchi, Radu Berdan, Yoshifumi Nishi, Ken Uchida and Daisuke Matsushita and has published in prestigious journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

Kensuke Ota

32 papers receiving 387 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Kensuke Ota Japan 10 387 113 41 34 34 34 403
Lingfei Wang China 9 263 0.7× 107 0.9× 42 1.0× 50 1.5× 23 0.7× 34 306
Ryun‐Han Koo South Korea 14 431 1.1× 106 0.9× 66 1.6× 45 1.3× 52 1.5× 69 478
Sumeet K. Gupta United States 8 372 1.0× 168 1.5× 19 0.5× 45 1.3× 33 1.0× 12 395
Chang-Hsien Lin Taiwan 8 497 1.3× 199 1.8× 33 0.8× 29 0.9× 47 1.4× 20 526
Jong-Ho Lee South Korea 12 410 1.1× 154 1.4× 59 1.4× 30 0.9× 14 0.4× 32 476
Md. Hasan Raza Ansari Saudi Arabia 11 267 0.7× 65 0.6× 30 0.7× 42 1.2× 25 0.7× 33 312
Changhyun Kim South Korea 3 185 0.5× 117 1.0× 40 1.0× 31 0.9× 40 1.2× 5 259
Daewoong Kwon South Korea 14 499 1.3× 188 1.7× 35 0.9× 39 1.1× 41 1.2× 34 526
A. V-Y. Thean Belgium 10 356 0.9× 100 0.9× 69 1.7× 45 1.3× 18 0.5× 17 388
Doohyeok Lim South Korea 14 397 1.0× 50 0.4× 101 2.5× 41 1.2× 42 1.2× 33 417

Countries citing papers authored by Kensuke Ota

Since Specialization
Citations

This map shows the geographic impact of Kensuke Ota's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kensuke Ota with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kensuke Ota more than expected).

Fields of papers citing papers by Kensuke Ota

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kensuke Ota. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kensuke Ota. The network helps show where Kensuke Ota may publish in the future.

Co-authorship network of co-authors of Kensuke Ota

This figure shows the co-authorship network connecting the top 25 collaborators of Kensuke Ota. A scholar is included among the top collaborators of Kensuke Ota based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kensuke Ota. Kensuke Ota is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Berdan, Radu, Takao Marukame, Kensuke Ota, et al.. (2020). Low-power linear computation using nonlinear ferroelectric tunnel junction memristors. Nature Electronics. 3(5). 259–266. 183 indexed citations
3.
Ota, Kensuke, et al.. (2020). Performance Maximization of In-Memory Reinforcement Learning with Variability-Controlled Hf1-xZrxO2 Ferroelectric Tunnel Junctions -- *. IEICE Technical Report; IEICE Tech. Rep.. 119(397). 9–9. 1 indexed citations
5.
Ota, Kensuke, et al.. (2019). Comprehensive study of variability in poly-Si channel nanowire transistor. Japanese Journal of Applied Physics. 58(SB). SBBA06–SBBA06.
6.
Ota, Kensuke, et al.. (2019). Random Telegraph Noise after Hot Carrier Injection in Tri-gate Nanowire Transistor. 169–171. 2 indexed citations
7.
Berdan, Radu, Takao Marukame, Kensuke Ota, et al.. (2019). In-memory Reinforcement Learning with Moderately-Stochastic Conductance Switching of Ferroelectric Tunnel Junctions. T22–T23. 30 indexed citations
8.
Ota, Kensuke, et al.. (2016). Experimental study of time-dependent dielectric breakdown in tri-gate nanowire transistor. Japanese Journal of Applied Physics. 55(8S2). 08PD05–08PD05. 1 indexed citations
10.
Ota, Kensuke, et al.. (2014). Low-cost and scalable embedded nonvolatile memory using quasi-planar bulk transistor with standard CMOS gate stacks. Japanese Journal of Applied Physics. 53(4S). 04EC13–04EC13. 1 indexed citations
12.
Saitoh, Masumi, et al.. (2013). Systematic understanding of channel-size dependence of low-frequency noise in 10nm-diameter tri-gate nanowire MOSFETs. Symposium on VLSI Technology. 4 indexed citations
13.
Ota, Kensuke, et al.. (2012). 10nm-Diameter Tri-Gate Silicon Nanowire MOSFETs with Enhanced High-Field Transport and Vth Tunability through Thin BOX. IEICE Technical Report; IEICE Tech. Rep.. 112(169). 37–42. 7 indexed citations
14.
Ota, Kensuke, et al.. (2012). Enhanced Degradation by Negative Bias Temperature Stress in Si Nanowire Transistor. Japanese Journal of Applied Physics. 51(2S). 02BC08–02BC08. 3 indexed citations
15.
Saitoh, Masumi, et al.. (2012). Performance, variability and reliability of silicon tri-gate nanowire MOSFETs. 6A.3.1–6A.3.6. 7 indexed citations
16.
Saitoh, Masumi, et al.. (2012). SOI tri-gate nanowire MOSFETs for ultra-low power LSI. 53. 1–2. 2 indexed citations
17.
Saitoh, Masumi, et al.. (2011). Spice-based performance analysis of ultra-low voltage Si nanowire CMOS circuits. 27. 159–162. 1 indexed citations
20.
Ota, Kensuke, et al.. (2010). Threshold voltage shift and drain current degradation by NBT stress in Si (110) pMOSFETs. 134–137. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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