K. Matsuzawa

549 total citations
42 papers, 388 citations indexed

About

K. Matsuzawa is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Artificial Intelligence. According to data from OpenAlex, K. Matsuzawa has authored 42 papers receiving a total of 388 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 7 papers in Atomic and Molecular Physics, and Optics and 5 papers in Artificial Intelligence. Recurrent topics in K. Matsuzawa's work include Advancements in Semiconductor Devices and Circuit Design (31 papers), Semiconductor materials and devices (26 papers) and Silicon Carbide Semiconductor Technologies (9 papers). K. Matsuzawa is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (31 papers), Semiconductor materials and devices (26 papers) and Silicon Carbide Semiconductor Technologies (9 papers). K. Matsuzawa collaborates with scholars based in Japan, South Korea and Hong Kong. K. Matsuzawa's co-authors include Akira Nishiyama, Ken‐ichi Uchida, Nobuyuki Sano, N. Nakayama, Akira Hiroki, S. Takagi, M. Yoshimi, Atsushi Murakoshi, Y. Ushiku and N. Shigyo and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Electron Devices and IEEE Transactions on Power Delivery.

In The Last Decade

K. Matsuzawa

38 papers receiving 365 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. Matsuzawa Japan 10 357 86 41 34 10 42 388
F. Bénistant Singapore 10 260 0.7× 55 0.6× 37 0.9× 34 1.0× 6 0.6× 52 294
Thomas A. DeMassa United States 11 393 1.1× 67 0.8× 69 1.7× 32 0.9× 9 0.9× 44 413
J. Johnson United States 6 465 1.3× 72 0.8× 80 2.0× 83 2.4× 8 0.8× 17 510
Roshan Achal Canada 8 266 0.7× 149 1.7× 45 1.1× 58 1.7× 8 0.8× 10 328
H. Iizuka Japan 11 327 0.9× 58 0.7× 22 0.5× 42 1.2× 11 1.1× 27 343
S. Okhonin Switzerland 12 602 1.7× 51 0.6× 56 1.4× 52 1.5× 5 0.5× 29 632
Oleg Gluschenkov United States 9 346 1.0× 62 0.7× 66 1.6× 54 1.6× 4 0.4× 21 374
P. Scheer France 11 374 1.0× 53 0.6× 35 0.9× 22 0.6× 3 0.3× 43 390
Jenn-Gang Chern United States 7 420 1.2× 45 0.5× 66 1.6× 30 0.9× 3 0.3× 13 436
K. Joardar United States 9 391 1.1× 32 0.4× 36 0.9× 18 0.5× 9 0.9× 20 399

Countries citing papers authored by K. Matsuzawa

Since Specialization
Citations

This map shows the geographic impact of K. Matsuzawa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Matsuzawa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Matsuzawa more than expected).

Fields of papers citing papers by K. Matsuzawa

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Matsuzawa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Matsuzawa. The network helps show where K. Matsuzawa may publish in the future.

Co-authorship network of co-authors of K. Matsuzawa

This figure shows the co-authorship network connecting the top 25 collaborators of K. Matsuzawa. A scholar is included among the top collaborators of K. Matsuzawa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Matsuzawa. K. Matsuzawa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhang, Li, M. Koike, Mizuki Ono, et al.. (2015). Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications. Microelectronics Reliability. 55(9-10). 1559–1563. 5 indexed citations
2.
Mitani, Yuichiro, et al.. (2012). Lifetime prediction of channel hot carrier degradation in pMOSFETs separating NBTI component. 1–4. 2 indexed citations
3.
Higashi, Y., Masato Oda, K. Matsuzawa, et al.. (2009). 90nm node RF CMOS technology with latch-up immunity on high-resistivity substrate. 65–68. 3 indexed citations
4.
Matsuzawa, K. & Eiji Fujiwara. (2003). Masking asymmetric line faults using semi-distance codes. 354–359. 1 indexed citations
5.
Matsuzawa, K., et al.. (2003). An elicitation principle of subject probabilities from statements on the Internet. 3. 459–463. 4 indexed citations
6.
7.
Matsuzawa, K., Ken Uchida, & Akira Nishiyama. (2003). Monte Carlo simulation of 50 nm devices with Schottky contact model. 35–38. 4 indexed citations
8.
Matsuzawa, K., et al.. (2003). Simulation of number of pulses to breakdown during TLP for ESD testing. 129–132. 7 indexed citations
9.
Kikuchi, Hidekazu, et al.. (2002). TWIN: a parallel scheme for a production system featuring both control and data parallelism. i. 64–70. 1 indexed citations
10.
Matsuzawa, K., Ken Uchida, & Akira Nishiyama. (2002). Simulations of Schottky barrier diodes and tunnel transistors. edl 7. 163–165. 1 indexed citations
11.
12.
13.
Sano, Nobuyuki, Akira Hiroki, & K. Matsuzawa. (2002). Device modeling and simulations toward sub-10 nm semiconductor devices. IEEE Transactions on Nanotechnology. 1(1). 63–71. 30 indexed citations
14.
Nishiyama, Akira, K. Matsuzawa, & S. Takagi. (2001). SiGe source/drain structure for the suppression of the short-channel effect of sub-0.1-μm p-channel MOSFETs. IEEE Transactions on Electron Devices. 48(6). 1114–1120. 18 indexed citations
15.
Matsuzawa, K., Ken‐ichi Uchida, & Akira Nishiyama. (2000). A unified simulation of Schottky and ohmic contacts. IEEE Transactions on Electron Devices. 47(1). 103–108. 106 indexed citations
16.
Yoshimi, M., Akira Nishiyama, Atsushi Murakoshi, et al.. (1997). Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si/sub 1-x/Ge/sub x/ source structure. IEEE Transactions on Electron Devices. 44(3). 423–430. 37 indexed citations
17.
Hirose, M., et al.. (1996). A lightly doped deep drain GaAs MESFET structure for linear amplifiers of personal handy-phone systems. IEEE Transactions on Electron Devices. 43(12). 2062–2067. 2 indexed citations
18.
Matsuzawa, K., et al.. (1992). A physically based base pushout model for submicrometer BJTs in the presence of velocity overshoot. IEEE Transactions on Electron Devices. 39(2). 396–403. 11 indexed citations
19.
Masuda, Keita, et al.. (1986). A giant chip multigate transistor ROM circuit design. IEEE Journal of Solid-State Circuits. 21(5). 713–719. 3 indexed citations
20.
Matsuzawa, K., et al.. (1984). Development Of Metal-Enclosed Switchgear Equipped With Automatic Dehumidifier. IEEE Transactions on Power Apparatus and Systems. PAS-103(10). 3014–3020. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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