A. E. Cherenkov

630 citations

18 papers · 542 indexed · h-index 7

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in ⓘ

Condensed Matter Physics 12
- GaN-based semiconductor devices and materials 12
Electronic, Optical and Magnetic Materials 8
- Ga2O3 and related materials 7

Co-authors: A. K. Omaev (2 shared papers)B. M. Ataev (2 shared papers)D. C. Look (2 shared papers)М. В. Чукичев (2 shared papers)E. V. Kalinina (2 shared papers)Ya. I. Alivov (2 shared papers)Darren M. Bagnall (2 shared papers)V. Dmitriev (7 shared papers)
Journals: Journal of Crystal Growth (2 papers)MRS Internet Journal of Nitride Semiconductor Research (1 paper)Applied Physics Letters (1 paper)Materials Science and Engineering B (1 paper)Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena (1 paper)
Partner nations: Russia United States United Kingdom

In The Last Decade

A. E. Cherenkov

17 papers receiving 523 citations

Peers

Countries citing papers authored by A. E. Cherenkov

Since Specialization

Citations

This map shows the geographic impact of A. E. Cherenkov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. E. Cherenkov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. E. Cherenkov more than expected).

Fields of papers citing papers by A. E. Cherenkov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. E. Cherenkov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. E. Cherenkov. The network helps show where A. E. Cherenkov may publish in the future.

Co-authors

The 25 scholars most cited alongside A. E. Cherenkov, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. E. Cherenkov Line = papers co-authored together A. E. Cherenkov links everyone, so they are left out of the graph.

All Works

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18 of 18 papers shown

#	Work
1	Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates Applied Physics Letters ·Ya. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, М. В. Чукичев, Darren M. Bagnall	2003	404
2	Strain relaxation in GaN layers grown on porous GaN sublayers MRS Internet Journal of Nitride Semiconductor Research ·M. G. Mynbaeva, A. N. Titkov, A. Kryzhanovski, I. S. Kotousova, A. S. Zubrilov, В. В. Ратников, V. Yu. Davydov, N.I. Kuznetsov, K. D. Mynbaev, D. Tsvetkov, С. И. Степанов, A. E. Cherenkov, V. Dmitriev	1999	44
3	Growth of SiC and SiC-AlN solid solution by container-free liquid phase epitaxy Journal of Crystal Growth ·V. Dmitriev, A. E. Cherenkov	1993	22
4	Properties of AlN Layers Grown on SiC Substrates in Wide Temperature Range by HVPE Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Oleg Ledyaev, A. E. Cherenkov, A. E. Nikolaev, И.П. Никитина, N.I. Kuznetsov, M. Dunaevski, A. N. Titkov, V. A. Dmitriev	2002	16
5	High quality GaN layers grown by hydride vapor phase epitaxy — a high resolution X-ray diffractometry and synchrotron X-ray topography study Materials Science and Engineering B ·J. Chaudhuri, C. Ignatiev, С. И. Степанов, D. Tsvetkov, A. E. Cherenkov, V. Dmitriev, Z. U. Rek	2000	12
6	Mechanism of the current flow in Pd-(heavily doped p-AlxGa1−x N) ohmic contact Semiconductors ·Tanya Blank, Yu. A. Goldberg, Elena Kalinina, O. V. Konstantinov, A. E. Nikolaev, А. В. Фомин, A. E. Cherenkov	2001	11
7	The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates Journal of Crystal Growth ·T.S. Cheng, С. В. Новиков, V. Lebedev, R. P. Campion, N.J. Jeffs, Yu. Melnik, D. Tsvetkov, С. И. Степанов, A. E. Cherenkov, V. Dmitriev, D. Korakakis, O. H. Hughes, C. T. Foxon	1999	8
8	Growth of SiC and GaN on Porous Buffer Layers Materials science forum ·M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova, M. P. Scheglov, A. А. Lebedev, A. S. Zubrilov, A. N. Titkov, A. Kryganovski, K. D. Mynbaev, N. V. Seredova, D. Tsvetkov, С. И. Степанов, A. E. Cherenkov, I. S. Kotousova, Vladimir Dmitriev	2000	4
9	Present Status of Razorbills Alca Torda in Russia: Occurrence, Population and Migrations Marine ornithology ·A. E. Cherenkov, Sergey Kouzov, Vladimir Semashko, Grigori Tertitski, Evgeny V. Semashko	2016	3
10	Temperature and current dependence of the intensity of the edge injection electroluminescence of SiC p-n structures Semiconductors ·M. M. Anikin, Anatoly M. Strel’chuk, A. L. Syrkin, V. E. Chelnokov, A. E. Cherenkov	1994	3
11	A study of n +-6H/n-3C/p +-6H-SiC heterostructures grown by sublimation epitaxy Semiconductors ·A. А. Lebedev, Anatoly M. Strel’chuk, S. Yu. Davydov, A. E. Cherenkov, Alexey N. Kuznetsov, A. S. Tregubova, L. M. Sorokin, M. P. Shcheglov, A. V. Sadokhin, S. Yoneda, S. Nishino	2006	3
12	6H(n<sup>+</sup>)/3C(n)/6H(p<sup>+</sup>) - SiC Structures Grown by Sublimation Epitaxy Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Anatoly M. Strel’chuk, A. А. Lebedev, A. E. Cherenkov, Alexey N. Kuznetsov, A. S. Tregubova, M. P. Scheglov, L. M. Sorokin, S. Yoneda, Shigehiro Nishino	2005	3
13	Forward and reverse current in 6H SiC p-n structures grown by container-free liquid epitaxy Semiconductors ·Anatoly M. Strel’chuk, V. V. Evstropov, В. А. Дмитриев, A. E. Cherenkov	1995	2
14	Photoelectrical Properties of AlGaN Epitaxial Layers Grown by HVPE Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Grigory Onushkin, A. E. Nikolaev, А. В. Фомин, Oleg Ledyaev, A. E. Cherenkov, E. V. Kalinina, И.П. Никитина, O. V. Kovalenkov, V. Dmitriev	2002	2
15	Heteropolytype structures with SiC quantum dots Technical Physics Letters ·A. A. Lebedev, В. Н. Петров, A. N. Titkov, L. M. Sorokin, A. S. Tregubova, G. N. Mosina, A. E. Cherenkov, M. P. Shcheglov	2005	2
16	Properties of GaN Homoepitaxial Layers Grown on GaN Epitaxial Wafers MRS Proceedings ·V. Dmitriev, A. E. Nikolaev, A. E. Cherenkov, D. Tsvetkov, С. А. Степанов, N.I. Kuznetsov, И.П. Никитина, A.P. Kovarsky, M. A. Yagovkina, V. Davidov	1998	2
17	GaN and AlN Layers Grown by Nano Epitaxial Lateral Overgrowth Technique on Porous Substrates MRS Proceedings ·M. G. Mynbaeva, A. N. Titkov, A. Kryzhanovski, A. S. Zubrilov, В. В. Ратников, V. Yu. Davydov, N.I. Kuznetsov, K. D. Mynbaev, С. И. Степанов, A. E. Cherenkov, I. S. Kotousova, D. Tsvetkov, V. Dmitriev	1999	1
18	ZnO/AlGaN ultraviolet light emitting diodes. MRS Proceedings ·Darren M. Bagnall, Ya. I. Alivov, Elena Kalinina, D. C. Look, B. M. Ataev, М. В. Чукичев, A. E. Cherenkov, A. K. Omaev	2003	0

About A. E. Cherenkov

A. E. Cherenkov is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Ceramics and Composites and Materials Chemistry, having authored 18 papers that have together received 542 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (12 papers), Silicon Carbide Semiconductor Technologies (10 papers), Ga2O3 and related materials (7 papers), Semiconductor materials and devices (7 papers), ZnO doping and properties (4 papers), Metal and Thin Film Mechanics (3 papers), Electromagnetic Compatibility and Noise Suppression (2 papers) and Semiconductor materials and interfaces (1 paper). The work is most often cited by research in Condensed Matter Physics (208 citations), Electronic, Optical and Magnetic Materials (266 citations), Materials Chemistry (426 citations), Electrical and Electronic Engineering (283 citations) and Acoustics and Ultrasonics (2 citations). A. E. Cherenkov has collaborated with scholars based in Russia, United States and United Kingdom. Frequent co-authors include A. K. Omaev, B. M. Ataev, D. C. Look, М. В. Чукичев, E. V. Kalinina, Ya. I. Alivov, Darren M. Bagnall, V. Dmitriev, С. И. Степанов and D. Tsvetkov. Their work appears in journals such as Journal of Crystal Growth, MRS Internet Journal of Nitride Semiconductor Research, Applied Physics Letters, Materials Science and Engineering B and Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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