P. S. Kop’ev

1.7k total citations
63 papers, 1.3k citations indexed

About

P. S. Kop’ev is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, P. S. Kop’ev has authored 63 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 52 papers in Atomic and Molecular Physics, and Optics, 49 papers in Electrical and Electronic Engineering and 11 papers in Condensed Matter Physics. Recurrent topics in P. S. Kop’ev's work include Semiconductor Quantum Structures and Devices (44 papers), Semiconductor Lasers and Optical Devices (28 papers) and Photonic and Optical Devices (21 papers). P. S. Kop’ev is often cited by papers focused on Semiconductor Quantum Structures and Devices (44 papers), Semiconductor Lasers and Optical Devices (28 papers) and Photonic and Optical Devices (21 papers). P. S. Kop’ev collaborates with scholars based in Russia, Germany and Belarus. P. S. Kop’ev's co-authors include V. M. Ustinov, D. Bimberg, Zh. I. Alfërov, N. N. Ledentsov, N. Kirstaedter, A. Yu. Egorov, M. V. Maximov, A. E. Zhukov, Oliver G. Schmidt and N. N. Ledentsov and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Applied Surface Science.

In The Last Decade

P. S. Kop’ev

63 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
P. S. Kop’ev Russia	15	1.1k	1.0k	317	157	119	63	1.3k
Philippe Christol France	16	866 0.8×	674 0.7×	279 0.9×	158 1.0×	98 0.8×	49	1.1k
S. Loualiche France	25	1.7k 1.5×	1.6k 1.6×	416 1.3×	118 0.8×	203 1.7×	121	1.9k
Bang‐Fen Zhu China	18	1.3k 1.2×	714 0.7×	476 1.5×	195 1.2×	132 1.1×	51	1.5k
Hiromitsu Asai Japan	18	1.0k 0.9×	1.1k 1.1×	284 0.9×	181 1.2×	118 1.0×	61	1.3k
Yu. G. Musikhin Russia	23	1.6k 1.4×	1.4k 1.3×	582 1.8×	305 1.9×	174 1.5×	81	1.8k
A. Y. Cho United States	20	1.1k 1.0×	935 0.9×	227 0.7×	235 1.5×	110 0.9×	54	1.3k
P. S. Kop’ev Russia	18	1.3k 1.2×	1.1k 1.1×	637 2.0×	291 1.9×	148 1.2×	60	1.6k
J. P. R. David United Kingdom	19	1.3k 1.2×	1.1k 1.1×	413 1.3×	158 1.0×	153 1.3×	54	1.5k
I. L. Krestnikov Germany	25	1.9k 1.7×	1.9k 1.9×	654 2.1×	331 2.1×	156 1.3×	105	2.3k
N. V. Kryzhanovskaya Russia	21	1.2k 1.1×	1.3k 1.3×	266 0.8×	200 1.3×	221 1.9×	225	1.5k

Countries citing papers authored by P. S. Kop’ev

Since Specialization

Citations

This map shows the geographic impact of P. S. Kop’ev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. S. Kop’ev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. S. Kop’ev more than expected).

Fields of papers citing papers by P. S. Kop’ev

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. S. Kop’ev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. S. Kop’ev. The network helps show where P. S. Kop’ev may publish in the future.

Co-authorship network of co-authors of P. S. Kop’ev

This figure shows the co-authorship network connecting the top 25 collaborators of P. S. Kop’ev. A scholar is included among the top collaborators of P. S. Kop’ev based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. S. Kop’ev. P. S. Kop’ev is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Slipchenko, S. O., A. V. Lyutetskiĭ, A. A. Podoskin, et al.. (2023). High-Power Laser Diodes Based on InGaAs(P)/Al(In)GaAs(P)/GaAs Heterostructures with Low Internal Optical Loss. Bulletin of the Lebedev Physics Institute. 50(S4). S494–S512. 4 indexed citations

Slipchenko, S. O., A. A. Podoskin, N. A. Pikhtin, et al.. (2021). Tunnel-Coupled Laser Diode Microarray as a kW-Level 100-ns Pulsed Optical Power Source (λ = 910 nm). IEEE Photonics Technology Letters. 34(1). 35–38. 12 indexed citations

Leshko, A. Yu., V. V. Shamakhov, V. A. Kapitonov, et al.. (2021). Output Optical Power Dynamics of Semiconductor Lasers (1070 nm) with a Few-Mode Lateral Waveguide of Mesa-Stripe Design at Ultrahigh Drive Currents. Technical Physics Letters. 47(5). 368–371. 1 indexed citations

Нечаев, Д. В., V. N. Jmerik, A. M. Mizerov, P. S. Kop’ev, & S. V. Ivanov. (2012). RHEED monitoring of elastic stresses during MBE growth of group III nitride heterostructures. Technical Physics Letters. 38(5). 443–445. 4 indexed citations

Ivanov, S. V., O. G. Lyublinskaya, I. V. Sedova, et al.. (2007). Correlation of CdSe quantum dot morphology, structure design and lasing properties of optically pumped green CdSe/ZnMgSSe lasers. physica status solidi (a). 204(1). 251–256. 3 indexed citations

Kovsh, A. R., A. E. Zhukov, A. Yu. Egorov, et al.. (1999). Gain in injection lasers based on self-organized quantum dots. Semiconductors. 33(2). 184–191. 4 indexed citations

Bimberg, D., N. N. Ledentsov, Marius Grundmann, et al.. (1998). Competitive Vertical Cavity and Edge Emitting Quantum Dot Lasers. Conference on Lasers and Electro-Optics Europe. CTuG1–CTuG1. 1 indexed citations

Zhukov, A. E., V. M. Ustinov, A. Yu. Egorov, et al.. (1997). Negative Characteristic Temperature of InGaAs Quantum Dot Injection Laser ( Quantum Dot Structures). 36(6). 4216–4218. 2 indexed citations

Иванов, С. В., et al.. (1997). Characteristics of the formation of (Al, Ga)Sb/InAs heterointerfaces in molecular-beam epitaxy. Semiconductors. 31(10). 1067–1070. 8 indexed citations

10.

Bimberg, D., N. Kirstaedter, N. N. Ledentsov, et al.. (1997). InGaAs-GaAs quantum-dot lasers. IEEE Journal of Selected Topics in Quantum Electronics. 3(2). 196–205. 409 indexed citations

11.

Egorov, A. Yu., A. E. Zhukov, P. S. Kop’ev, et al.. (1996). Formation of vertically aligned arrays of strained InAs quantum dots in a GaAs(100) matrix. Semiconductors. 30(9). 879–883. 8 indexed citations

12.

Alfërov, Zh. I., Н. А. Берт, A. Yu. Egorov, et al.. (1996). An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix. Semiconductors. 30. 194. 21 indexed citations

13.

Tsatsul’nikov, A. F., N. N. Ledentsov, М. В. Максимов, et al.. (1996). Photoluminescence of arrays of vertically coupled, stressed InAs quantum dots in a GaAs (100) matrix. Semiconductors. 30(10). 953–958. 2 indexed citations

14.

Alfërov, Zh. I., N. Yu. Gordeev, P. S. Kop’ev, et al.. (1996). A low-threshold injection heterojunction laser based on quantum dots, produced by gas-phase epitaxy from organometallic compounds. 30(2). 197–200. 5 indexed citations

15.

Egorov, A. Yu., A. E. Zhukov, P. S. Kop’ev, et al.. (1996). Optical emission range of structures with strained InAs quantum dots in GaAs. 30(8). 707–710. 1 indexed citations

16.

Ustinov, V. M., et al.. (1995). Effect of growth temperature on the electron mobility in InAlAs/InGaAs transistor structures grown on InP substrates by molecular beam epitaxy. Semiconductors. 29(8). 750–753. 2 indexed citations

17.

Ledentsov, N. N., et al.. (1995). Luminescence of localized electron-hole pairs in the fundamental absorption region of Zn(S,Se)-(Zn,Cd)Se quantum-well structures. Semiconductors. 29. 34. 1 indexed citations

18.

Egorov, A. Yu., A. E. Zhukov, P. S. Kop’ev, et al.. (1994). Effect of deposition conditions on the formation of (In,Ga)As quantum clusters in a GaAs matrix. 28(8). 809–811. 2 indexed citations

19.

Kyutt, R. N., Roland W. Scholz, S. Ruvimov, et al.. (1993). Dislocation structure of epitaxial GaSb films grown on (001) GaAs substrates by molecular beam epitaxy. Physics of the Solid State. 35(3). 372–378. 5 indexed citations

20.

Иванов, С. В., T. S. Argunova, V. V. Chaldyshev, et al.. (1993). Molecular beam epitaxy growth and characterization of thin (<2 mu m) GaSb layers on GaAs(100) substrates. Semiconductor Science and Technology. 8(3). 347–356. 37 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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