S. I. Troshkov

592 citations

74 papers · 441 indexed · h-index 11

Impact in

Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices
- Photonic Crystals and Applications

Papers in

Condensed Matter Physics 34
- GaN-based semiconductor devices and materials 34
Atomic and Molecular Physics, and Optics 42
- Semiconductor Quantum Structures and Devices 39
- Photonic Crystals and Applications 11

Co-authors: M. M. Kulagina N. V. Kryzhanovskaya M. V. Maximov W. V. Lundin A. A. Lipovskiĭ A. E. Zhukov E. I. Moiseev A. F. Tsatsul’nikov
Journals: Journal of Crystal Growth (5 papers)Journal of Applied Physics (4 papers)Journal of Experimental and Theoretical Physics Letters (3 papers)physica status solidi (a) (3 papers)Optics Express (2 papers)
Partner nations: Russia United States Belarus

In The Last Decade

S. I. Troshkov

69 papers receiving 418 citations

Peers

Countries citing papers authored by S. I. Troshkov

Since Specialization

Citations

This map shows the geographic impact of S. I. Troshkov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. I. Troshkov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. I. Troshkov more than expected).

Fields of papers citing papers by S. I. Troshkov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. I. Troshkov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. I. Troshkov. The network helps show where S. I. Troshkov may publish in the future.

Co-authors

The 25 scholars most cited alongside S. I. Troshkov, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. I. Troshkov Line = papers co-authored together S. I. Troshkov links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Low-defect and stress-free AlN(0001) nanoprisms and microrods selectively grown on micro-patterned c-sapphire substrate by plasma-assisted molecular beam epitaxy Applied Physics Letters ·V. N. Jmerik, Alexey Semenov, Д. В. Нечаев, S. I. Troshkov, D. D. Sakhno, P. A. Alekseev, Demid A. Kirilenko, I. A. Eliseyev, V. Yu. Davydov, Arwa Saud Abbas	2024	0
2	Low-Threshold Surface-Emitting Whispering-Gallery Mode Microlasers IEEE Journal of Selected Topics in Quantum Electronics ·A. V. Babichev, Ivan Makhov, N. V. Kryzhanovskaya, S. I. Troshkov, Yuriy Zadiranov, Yulia Salii, M. M. Kulagina, M. A. Bobrov, А. Э. Васильев, S. A. Blokhin, N. A. Maleev, L. Ya. Karachinsky, I. I. Novikov, A. Yu. Egorov	2024	0
3	Lasing via excited state of type A InP/GaInP quantum dots embedded in microdisks Journal of Applied Physics ·D. V. Lebedev, A. M. Mintairov, A. S. Vlasov, M. M. Kulagina, Yu. A. Guseva, S. I. Troshkov, G. Juška, E. Pelucchi, Agnieszka Gocalińska	2022	2
4	Monolayer‐Range Compositional Modulations in Al_xGa_1−xN_{(x = 0.6–0.75)} Layers Grown Using Plasma‐Assisted Molecular Beam Epitaxy under Me‐Rich Conditions with an Off‐Centered Spatial Distribution of Activated Nitrogen Flux physica status solidi (a) ·V. N. Jmerik, Д. В. Нечаев, M. A. Yagovkina, A. А. Ситникова, S. I. Troshkov, M. V. Rzheutski, E. V. Lutsenko, Sergei Rouvimov	2022	1
5	Stress evolution during growth of AlN templates on c-Al2O3 substrates by plasma-assisted molecular beam epitaxy Journal of Physics Conference Series ·O A Koshelev, Д. В. Нечаев, P. N. Brunkov, В. В. Ратников, S. I. Troshkov, С. В. Иванов, V. N. Jmerik	2019	1
6	InGaN/GaN light-emitting diode microwires of submillimeter length Semiconductors ·W. V. Lundin, S. N. Rodin, A. V. Sakharov, E. Yu. Lundina, S. O. Usov, Yu. M. Zadiranov, S. I. Troshkov, A. F. Tsatsul’nikov	2017	2
7	Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates Journal of Crystal Growth ·V. N. Jmerik, Nadezda Kuznetsova, Д. В. Нечаев, T. V. Shubina, Demid A. Kirilenko, S. I. Troshkov, V. Yu. Davydov, A. N. Smirnov, S. V. Ivanov	2017	6
8	Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range Semiconductors ·A. V. Babichev, N. V. Kryzhanovskaya, E. I. Moiseev, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, S. A. Blokhin, M. A. Bobrov, Yu. M. Zadiranov, S. I. Troshkov, A. Yu. Egorov	2017	2
9	3.5-μm radius race-track microlasers operating at room temperature with 1.3-μm quantum dot active region Journal of Applied Physics ·N. V. Kryzhanovskaya, Yu. S. Polubavkina, Sergey Scherbak, E. I. Moiseev, Valentina Zhurikhina, F. I. Zubov, A. A. Lipovskiĭ, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, M. V. Maximov, A. E. Zhukov	2017	4
10	Microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum wells Journal of Applied Physics ·N. V. Kryzhanovskaya, E. I. Moiseev, Yu. S. Polubavkina, F. I. Zubov, M. V. Maximov, A. A. Lipovskiĭ, M. M. Kulagina, S. I. Troshkov, Ville‐Markus Korpijärvi, Tapio Niemi, Riku Isoaho, Mircea Guină, М. В. Лебедев, T. V. L’vova, A. E. Zhukov	2016	7
11	Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping Technical Physics Letters ·S. A. Blokhin, N. V. Kryzhanovskaya, E. I. Moiseev, M. A. Bobrov, A. G. Kuzmenkov, A. A. Blokhin, А. П. Васильев, I. O. Karpovskii, Yu. M. Zadiranov, S. I. Troshkov, В. Н. Неведомский, E. V. Nikitina, N. A. Maleev, V. M. Ustinov	2016	3
12	Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling physica status solidi (a) ·M. M. Rozhavskaya, W. V. Lundin, S. I. Troshkov, A. F. Tsatsul’nikov, В. Г. Дубровский	2015	16
13	The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots Technical Physics Letters ·N. V. Kryzhanovskaya, М. В. Лебедев, T. V. L’vova, Yu. V. Kudashova, I.I. Shostak, E. I. Moiseev, A. E. Zhukov, M. V. Maximov, M. M. Kulagina, A. M. Nadtochiy, S. I. Troshkov, A. A. Blokhin, M. A. Bobrov	2015	3
14	The effect of the sulfide passivation on the luminescence of microdisk mesas with quantum wells and quantum dots Journal of Physics Conference Series ·N. V. Kryzhanovskaya, М. В. Лебедев, T. V. L’vova, Yu. V. Kudashova, I.I. Shostak, E. I. Moiseev, A. E. Zhukov, M. V. Maximov, M. M. Kulagina, A. M. Nadtochiy, S. I. Troshkov	2015	1
15	Nanomaterial disordering in AlGaN/GaN UV LED structures Journal of Physics Conference Series ·E. I. Shabunina, M. E. Levinshteĭn, M. M. Kulagina, S Yu Kurin, A. E. Chernyakov, V. N. Petrov, В. В. Ратников, I N Smirnova, S. I. Troshkov, N. M. Shmidt, A. Usikov, H. Helava, Yu.N. Makarov	2015	3
16	Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN Semiconductors ·M. M. Rozhavskaya, W. V. Lundin, E. E. Zavarin, S. I. Troshkov, P. N. Brunkov, A. F. Tsatsul’nikov	2013	2
17	Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture Technical Physics Letters ·A. M. Nadtochiy, S. A. Blokhin, A. G. Kuzmenkov, М. В. Максимов, N. A. Maleev, S. I. Troshkov, N. N. Ledentsov, V. M. Ustinov, A. Mutig, D. Bimberg	2012	5
18	Fast AlGaN growth in a whole composition range in planetary reactor Journal of Crystal Growth ·W. V. Lundin, A. E. Nikolaev, M. M. Rozhavskaya, E. E. Zavarin, A. V. Sakharov, S. I. Troshkov, M. A. Yagovkina, A. F. Tsatsul’nikov	2012	15
19	Molecular beam epitaxy of cubic GaN on a (001) GaAs substrate using hydrazine Semiconductors ·Vladimir G. Antipov, A. S. Zubrilov, A. Merkulov, S. A. Nikishin, A. А. Ситникова, M. V. Stepanov, S. I. Troshkov, V. P. Ulin, N. N. Faleev	1995	9
20	Solar heterophotocells with increased p--n junction depth V. M. Andreev, B. V. Egorov, V. M. Lantratov, V. D. Rumi︠a︡nt︠s︡ev, S. I. Troshkov	1983	1

About S. I. Troshkov

S. I. Troshkov is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Mechanics of Materials, having authored 74 papers that have together received 441 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (39 papers), Photonic and Optical Devices (37 papers), GaN-based semiconductor devices and materials (34 papers), Semiconductor Lasers and Optical Devices (24 papers), Ga2O3 and related materials (13 papers), Photonic Crystals and Applications (11 papers), Nanowire Synthesis and Applications (10 papers) and ZnO doping and properties (10 papers). The work is most often cited by research in Condensed Matter Physics (160 citations), Atomic and Molecular Physics, and Optics (247 citations), Electrical and Electronic Engineering (308 citations), Electronic, Optical and Magnetic Materials (81 citations) and Materials Chemistry (105 citations). S. I. Troshkov has collaborated with scholars based in Russia, United States and Belarus. Frequent co-authors include M. M. Kulagina, N. V. Kryzhanovskaya, M. V. Maximov, W. V. Lundin, A. A. Lipovskiĭ, A. E. Zhukov, E. I. Moiseev, A. F. Tsatsul’nikov, S. V. Ivanov and V. N. Jmerik. Their work appears in journals such as Journal of Crystal Growth, Journal of Applied Physics, Journal of Experimental and Theoretical Physics Letters, physica status solidi (a) and Optics Express.

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