Т. В. Малин

598 citations

80 papers · 435 · h-index 10

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 73
- GaN-based semiconductor devices and materials 73
Electronic, Optical and Magnetic Materials 48
- Ga2O3 and related materials 48

Co-authors: К. С. Журавлев (77 shared papers)V. G. Mansurov (47 shared papers)B. Pécz (8 shared papers)S.B. Lişesivdin (7 shared papers)E. Tiraş (6 shared papers)П. А. Бохан (9 shared papers)A. F. Tsatsul’nikov (1 shared paper)С. Б. Эренбург (5 shared papers)
Journals: Journal of Crystal Growth (6 papers)Applied Surface Science (5 papers)Japanese Journal of Applied Physics (3 papers)Semiconductor Science and Technology (3 papers)Journal of Luminescence (2 papers)
Partner nations: Russia Hungary Türkiye

In The Last Decade

Т. В. Малин

75 papers receiving 412 citations

Peers

Countries citing papers authored by Т. В. Малин

Since Specialization

Citations

This map shows the geographic impact of Т. В. Малин's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Т. В. Малин with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Т. В. Малин more than expected).

Fields of papers citing papers by Т. В. Малин

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Т. В. Малин. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Т. В. Малин. The network helps show where Т. В. Малин may publish in the future.

Co-authors

The 25 scholars most cited alongside Т. В. Малин, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Т. В. Малин Line = papers co-authored together Т. В. Малин links everyone, so they are left out of the graph.

All Works

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#	Work
1	Graphene-like AlN layer formation on (111)Si surface by ammonia molecular beam epitaxy Journal of Crystal Growth ·V. G. Mansurov, Т. В. Малин, Yu. G. Galitsyn, К. С. Журавлев	2015	70
2	Diffusion in GaN/AlN superlattices: DFT and EXAFS study Applied Surface Science ·I. A. Aleksandrov, Т. В. Малин, К. С. Журавлев, С. В. Трубина, С. Б. Эренбург, B. Pécz, Y. V. Lebiadok	2020	28
3	Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas Semiconductors ·D. Yu. Protasov, Т. В. Малин, A.V. Tikhonov, A. F. Tsatsul’nikov, К. С. Журавлев	2013	25
4	Characterization of the green band in photoluminescence spectra of heavily doped Al_xGa₁₋ _xN:Si with the Al content x > 0.5 Japanese Journal of Applied Physics ·I. V. Osinnykh, Т. В. Малин, Viktor F. Plyusnin, A. S. Suranov, Alexander Gilinsky, К. С. Журавлев	2016	18
5	2D AlN crystal phase formation on (0001) Al₂O₃ surface by ammonia MBE Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Т. В. Малин, V. G. Mansurov, Yu. G. Galitsyn, К. С. Журавлев	2015	15
6	The variation of temperature‐dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation physica status solidi (b) ·S. Ardali, G. Atmaca, S.B. Lişesivdin, Т. В. Малин, V. G. Mansurov, К. С. Журавлев, E. Tiraş	2015	15
7	Characterization of MBE‐grown AlGaN layers heavily doped using silane Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·К. С. Журавлев, I. V. Osinnykh, D. Yu. Protasov, Т. В. Малин, V. Yu. Davydov, А. В. Смирнов, R. N. Kyutt, A. V. Spirina, V. I. Solomonov	2013	14
8	Luminescence and superradiance in electron-beam-excited AlxGa1−x N Journal of Applied Physics ·П. А. Бохан, П. П. Гугин, D. É. Zakrevsky, К. С. Журавлев, Т. В. Малин, I. V. Osinnykh, V. I. Solomonov, A. V. Spirina	2014	10
9	Growth of AlGaN/GaN heterostructures with a two-dimensional electron gas on AlN/Al2O3 substrates Optoelectronics Instrumentation and Data Processing ·Т. В. Малин, V. G. Mansurov, A. M. Gilinskiǐ, D. Yu. Protasov, A. S. Kozhukhov, А. П. Василенко, К. С. Журавлев	2013	10
10	STM/STS Study of the Density of States and Contrast Behavior at the Boundary between (7 × 7)N and (8 × 8) Structures in the SiN/Si(111) System Crystals ·V. G. Mansurov, Т. В. Малин, S. A. Teys, Victor V. Atuchin∥⊥, Denis Milakhin, К. С. Журавлев	2022	9
11	Luminescence properties of heavily doped AlxGa1-xN/AlN films grown on sapphire substrate Journal of Luminescence ·П. А. Бохан, N. V. Fateev, Т. В. Малин, I. V. Osinnykh, D. É. Zakrevsky, К. С. Журавлев	2018	9
12	EXAFS study of GaN/AlN multiple quantum wells grown by ammonia MBE Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·К. С. Журавлев, Т. В. Малин, С. В. Трубина, С. Б. Эренбург, László Dobos, B. Pécz, V. Yu. Davydov, A. N. Smirnov, R. N. Kyutt	2013	8
13	Decrease in the binding energy of donors in heavily doped GaN:Si layers Semiconductors ·I. V. Osinnykh, К. С. Журавлев, Т. В. Малин, B. Ya. Ber, D. Yu. Kazantsev	2014	8
14	Kinetics and thermodynamics of Si(111) surface nitridation in ammonia Journal of Crystal Growth ·V. G. Mansurov, Т. В. Малин, Yu. G. Galitsyn, A. A. Shklyaev, К. С. Журавлев	2016	7
15	Thermodynamic and kinetic aspects of AlN crystal formation on (0001)Al₂O₃ surface by ammonia MBE Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Т. В. Малин, V. G. Mansurov, Yu. G. Galitsyn, К. С. Журавлев	2014	7
16	Evolution of the atomic and electronic structures during nitridation of the Si(1 1 1) surface under ammonia flux Applied Surface Science ·V. G. Mansurov, Yu. G. Galitsyn, Т. В. Малин, S. A. Teys, Denis Milakhin, К. С. Журавлев	2021	7
17	Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE Journal of Thermal Analysis and Calorimetry ·Denis Milakhin, Т. В. Малин, V. G. Mansurov, Yu. G. Galitsyn, К. С. Журавлев	2018	7
18	Modification of the surface energy and morphology of GaN monolayers on the AlN surface in an ammonia flow Applied Physics Letters ·Yan Maidebura, Т. В. Малин, К. С. Журавлев	2022	6
19	Evolution of the surface states during the in situ SiN layer formation on AlN/GaN heterostructures Semiconductor Science and Technology ·К. С. Журавлев, V. G. Mansurov, Yu. G. Galitsyn, Т. В. Малин, Denis Milakhin, V. E. Zemlyakov	2020	6
20	Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy Thin Solid Films ·Т. В. Малин, Yan Maidebura, V. G. Mansurov, Tatyana A. Gavrilova, A.K. Gutakovsky, V. I. Vdovin, Sergey Ponomarev, И. Д. Лошкарев, I. V. Osinnykh, В. А. Володин, Denis Milakhin, К. С. Журавлев	2024	6

About Т. В. Малин

Т. В. Малин is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, having authored 80 papers that have together received 435 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (73 papers), Ga2O3 and related materials (48 papers), Semiconductor materials and devices (29 papers), ZnO doping and properties (24 papers), Semiconductor Quantum Structures and Devices (20 papers), Metal and Thin Film Mechanics (7 papers), Graphene research and applications (6 papers) and Silicon Nanostructures and Photoluminescence (5 papers). The work is most often cited by research in Condensed Matter Physics (309 citations), Electronic, Optical and Magnetic Materials (195 citations), Materials Chemistry (211 citations), Atomic and Molecular Physics, and Optics (109 citations) and Electrical and Electronic Engineering (147 citations). Т. В. Малин has collaborated with scholars based in Russia, Hungary and Türkiye. Frequent co-authors include К. С. Журавлев, V. G. Mansurov, B. Pécz, S.B. Lişesivdin, E. Tiraş, П. А. Бохан, A. F. Tsatsul’nikov, С. Б. Эренбург, С. В. Трубина and D. É. Zakrevsky. Their work appears in journals such as Journal of Crystal Growth, Applied Surface Science, Japanese Journal of Applied Physics, Semiconductor Science and Technology and Journal of Luminescence.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Т. В. Малин

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