Т. В. Малин

598 total citations
80 papers, 435 citations indexed

About

Т. В. Малин is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Т. В. Малин has authored 80 papers receiving a total of 435 indexed citations (citations by other indexed papers that have themselves been cited), including 73 papers in Condensed Matter Physics, 48 papers in Electronic, Optical and Magnetic Materials and 33 papers in Materials Chemistry. Recurrent topics in Т. В. Малин's work include GaN-based semiconductor devices and materials (73 papers), Ga2O3 and related materials (48 papers) and Semiconductor materials and devices (29 papers). Т. В. Малин is often cited by papers focused on GaN-based semiconductor devices and materials (73 papers), Ga2O3 and related materials (48 papers) and Semiconductor materials and devices (29 papers). Т. В. Малин collaborates with scholars based in Russia, Hungary and Türkiye. Т. В. Малин's co-authors include К. С. Журавлев, V. G. Mansurov, B. Pécz, S.B. Lişesivdin, D. É. Zakrevsky, С. В. Трубина, A. F. Tsatsul’nikov, П. А. Бохан, С. Б. Эренбург and E. Tiraş and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

Т. В. Малин

75 papers receiving 412 citations

Peers

Т. В. Малин

CMP

EOMM

EEE

AMPO

V. G. Mansurov Russia

Karolina Grabiańska Poland

Masatomo Shibata Japan

S. H. Goss United States

Andrew Melton United States

Mikolaj Amilusik Poland

O. Svensk Finland

Sammy Saber United States

Mark C. Mendrick United States

Bo-Ting Liou Taiwan

V. G. Mansurov Russia

Т. В. Малин

277 ×0.9

CMP

194 ×0.9

144 ×0.7

EOMM

132 ×0.9

EEE

119 ×1.1

AMPO

Citations per year, relative to Т. В. Малин Т. В. Малин (= 1×) peers V. G. Mansurov

Countries citing papers authored by Т. В. Малин

Since Specialization

Citations

This map shows the geographic impact of Т. В. Малин's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Т. В. Малин with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Т. В. Малин more than expected).

Fields of papers citing papers by Т. В. Малин

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Т. В. Малин. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Т. В. Малин. The network helps show where Т. В. Малин may publish in the future.

Co-authorship network of co-authors of Т. В. Малин

This figure shows the co-authorship network connecting the top 25 collaborators of Т. В. Малин. A scholar is included among the top collaborators of Т. В. Малин based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Т. В. Малин. Т. В. Малин is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Mansurov, V. G., et al.. (2025). Polytypism phenomenon in GaN nanocrystals grown on a van der Waals surface. CrystEngComm. 27(15). 2307–2316.

Малин, Т. В., et al.. (2024). Effect of AlN Interlayer Thickness on 2DEG Parameters in AlGaN/AlN/GaN HEMT Structures. 8467. 120–125. 1 indexed citations

Малин, Т. В., V. G. Mansurov, Tatyana A. Gavrilova, et al.. (2024). Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy. Thin Solid Films. 791. 140246–140246. 6 indexed citations

Mansurov, V. G., et al.. (2024). Droplet epitaxy of 3D zinc-blende GaN islands on a 2D van der Waals SiN structure. Applied Surface Science. 655. 159595–159595. 2 indexed citations

Малин, Т. В., V. G. Mansurov, S. V. Goryaĭnov, et al.. (2024). Tackling residual tensile stress in AlN-on-Si nucleation layers via the controlled Si(111) surface nitridation. Surfaces and Interfaces. 51. 104817–104817. 2 indexed citations

Бохан, П. А., et al.. (2024). Mechanisms of Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures (x = 0.56–1). Semiconductors. 58(5). 386–392. 4 indexed citations

Mansurov, V. G., et al.. (2023). Investigation of the effect of different types of SiN layers and cap-GaN on the surface electronic states of AlGaN/GaN heterostructures with 2DEG using X-ray and UV photoelectron spectroscopy. Applied Surface Science. 640. 158313–158313. 2 indexed citations

Малин, Т. В., et al.. (2023). Effect of growth temperature of NH3-MBE grown GaN-on-Si layers on donor concentration and leakage currents. Journal of Crystal Growth. 626. 127459–127459. 1 indexed citations

Mansurov, V. G., Т. В. Малин, К. С. Журавлев, et al.. (2023). Local phonon imaging of AlN nanostructures with nanoscale spatial resolution. Nanoscale Advances. 5(10). 2820–2830. 4 indexed citations

10.

Малин, Т. В., et al.. (2022). Modification of the surface energy and morphology of GaN monolayers on the AlN surface in an ammonia flow. Applied Physics Letters. 120(5). 6 indexed citations

11.

Журавлев, К. С., et al.. (2020). Evolution of the surface states during the in situ SiN layer formation on AlN/GaN heterostructures. Semiconductor Science and Technology. 35(7). 75004–75004. 6 indexed citations

12.

Малин, Т. В., et al.. (2020). Donor-acceptor nature of orange photoluminescence in AlN. Semiconductor Science and Technology. 35(12). 125006–125006. 3 indexed citations

13.

Малин, Т. В., et al.. (2019). Donor–acceptor pair emission via defects with strong electron–phonon coupling in heavily doped Al _x Ga _{1− x} N:Si layers with Al content x > 0.5. Japanese Journal of Applied Physics. 58(SC). SCCB27–SCCB27. 4 indexed citations

14.

Бохан, П. А., et al.. (2019). Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures. Technical Physics Letters. 45(9). 951–954. 2 indexed citations

15.

Малин, Т. В., et al.. (2019). Нелегированный высокоомный буферный слой GaN для HEMT AlGaN/GaN. Письма в журнал технической физики. 45(15). 21–21. 1 indexed citations

16.

Журавлев, К. С., et al.. (2018). Second Harmonic Generation in Al0.1Ga0.9N Thin Film. 13(2). 64–69. 4 indexed citations

17.

Бохан, П. А., et al.. (2017). Radiation enhancement in doped AlGaN-structures upon optical pumping. Technical Physics Letters. 43(1). 46–49. 3 indexed citations

18.

Малин, Т. В., et al.. (2016). Characterization of the green band in photoluminescence spectra of heavily doped Al. Japanese Journal of Applied Physics. 55(5). 3 indexed citations

19.

Ратников, В. В., R. N. Kyutt, A. N. Smirnov, et al.. (2013). Defects and stresses in MBE-grown GaN and Al0.3Ga0.7N layers doped by silicon using silane. Crystallography Reports. 58(7). 1023–1029. 3 indexed citations

20.

Журавлев, К. С., Т. В. Малин, С. В. Трубина, et al.. (2013). EXAFS study of GaN/AlN multiple quantum wells grown by ammonia MBE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 10(3). 311–314. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact