V. N. Jmerik

1.7k total citations
111 papers, 1.2k citations indexed

About

V. N. Jmerik is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, V. N. Jmerik has authored 111 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 102 papers in Condensed Matter Physics, 60 papers in Electronic, Optical and Magnetic Materials and 43 papers in Materials Chemistry. Recurrent topics in V. N. Jmerik's work include GaN-based semiconductor devices and materials (102 papers), Ga2O3 and related materials (57 papers) and ZnO doping and properties (38 papers). V. N. Jmerik is often cited by papers focused on GaN-based semiconductor devices and materials (102 papers), Ga2O3 and related materials (57 papers) and ZnO doping and properties (38 papers). V. N. Jmerik collaborates with scholars based in Russia, Sweden and Japan. V. N. Jmerik's co-authors include S. V. Ivanov, T. V. Shubina, Д. В. Нечаев, С. В. Иванов, A. А. Ситникова, A. M. Mizerov, E. V. Lutsenko, А. А. Торопов, B. Ḿonemar and V. A. Vekshin and has published in prestigious journals such as Physical Review Letters, Nano Letters and Physical review. B, Condensed matter.

In The Last Decade

V. N. Jmerik

104 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. N. Jmerik Russia 19 1.1k 696 524 380 327 111 1.2k
Emmanouil Dimakis Greece 25 814 0.8× 549 0.8× 615 1.2× 684 1.8× 549 1.7× 72 1.4k
F. Omnès France 19 979 0.9× 752 1.1× 526 1.0× 339 0.9× 287 0.9× 27 1.3k
V. Kueller Germany 19 1.5k 1.4× 982 1.4× 698 1.3× 517 1.4× 243 0.7× 35 1.6k
Christian Kühn Germany 18 1.1k 1.1× 734 1.1× 482 0.9× 382 1.0× 204 0.6× 36 1.2k
E. Iliopoulos Greece 27 1.5k 1.4× 823 1.2× 819 1.6× 420 1.1× 530 1.6× 86 1.9k
Martin Guttmann Germany 21 1.2k 1.1× 831 1.2× 516 1.0× 470 1.2× 157 0.5× 53 1.3k
Frank Mehnke Germany 25 1.6k 1.5× 1.0k 1.5× 681 1.3× 515 1.4× 220 0.7× 56 1.7k
Jens Raß Germany 19 1.4k 1.3× 846 1.2× 612 1.2× 433 1.1× 274 0.8× 57 1.5k
S. B. Fleischer United States 12 1.0k 1.0× 583 0.8× 446 0.9× 326 0.9× 673 2.1× 20 1.4k
V. A. Vekshin Russia 10 963 0.9× 530 0.8× 486 0.9× 239 0.6× 399 1.2× 22 1.0k

Countries citing papers authored by V. N. Jmerik

Since Specialization
Citations

This map shows the geographic impact of V. N. Jmerik's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. N. Jmerik with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. N. Jmerik more than expected).

Fields of papers citing papers by V. N. Jmerik

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. N. Jmerik. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. N. Jmerik. The network helps show where V. N. Jmerik may publish in the future.

Co-authorship network of co-authors of V. N. Jmerik

This figure shows the co-authorship network connecting the top 25 collaborators of V. N. Jmerik. A scholar is included among the top collaborators of V. N. Jmerik based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. N. Jmerik. V. N. Jmerik is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Jmerik, V. N., Д. В. Нечаев, А. Н. Семенов, et al.. (2023). 2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters. Nanomaterials. 13(6). 1077–1077. 3 indexed citations
3.
Dunaevskiy, M. S., et al.. (2023). Local piezoelectric doping of monolayer WSe2. Applied Physics Letters. 122(22). 1 indexed citations
4.
5.
Торопов, А. А., M. O. Nestoklon, D. S. Smirnov, et al.. (2019). Strongly Confined Excitons in GaN/AlN Nanostructures with Atomically Thin GaN Layers for Efficient Light Emission in Deep-Ultraviolet. Nano Letters. 20(1). 158–165. 19 indexed citations
6.
Davydov, V. Yu., E. M. Roginskiĭ, Yu. É. Kitaev, et al.. (2019). Phonons in short-period (GaN)m(AlN)n superlattices: ab initio calculations and group-theoretical analysis of modes and their genesis. Journal of Physics Conference Series. 1400(6). 66016–66016. 3 indexed citations
7.
Robin, Yoann, Si‐Young Bae, T. V. Shubina, et al.. (2018). Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes. Scientific Reports. 8(1). 7311–7311. 55 indexed citations
8.
Jmerik, V. N., Д. В. Нечаев, T. V. Shubina, et al.. (2017). Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates. Journal of Crystal Growth. 477. 207–211. 6 indexed citations
9.
Shubina, T. V., Г. Позина, V. N. Jmerik, et al.. (2015). III-nitride tunable cup-cavities supporting quasi whispering gallery modes from ultraviolet to infrared. Scientific Reports. 5(1). 17970–17970. 11 indexed citations
10.
Саченко, А. В., A. E. Belyaev, Н. С. Болтовец, et al.. (2015). Temperature dependences of the contact resistivity in ohmic contacts to n +-InN. Semiconductors. 49(4). 461–471. 3 indexed citations
11.
Rouvimov, Sergei, V. N. Jmerik, Д. В. Нечаев, et al.. (2015). Defect engineering in AlGaN-based UV optoelectronic heterostructures grown on c-Al2O3 by plasma-assisted molecular beam epitaxy. MRS Proceedings. 1741. 1 indexed citations
12.
Нечаев, Д. В., V. N. Jmerik, A. M. Mizerov, P. S. Kop’ev, & S. V. Ivanov. (2012). RHEED monitoring of elastic stresses during MBE growth of group III nitride heterostructures. Technical Physics Letters. 38(5). 443–445. 4 indexed citations
13.
Jmerik, V. N., A. M. Mizerov, T. V. Shubina, et al.. (2010). Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma‐assisted molecular beam epitaxy on c‐Al2O3. physica status solidi (a). 207(6). 1313–1317. 8 indexed citations
14.
Shubina, T. V., A. V. Andrianov, V. N. Jmerik, et al.. (2010). Terahertz electroluminescence of surface plasmons from nanostructured InN layers. Applied Physics Letters. 96(18). 12 indexed citations
15.
Shakhov, M. A., V. N. Jmerik, T. V. Shubina, et al.. (2009). Abnormal magnetic-field dependence of Hall coefficient in InN epilayers. Applied Physics Letters. 95(1). 11 indexed citations
16.
Торопов, А. А., T. V. Shubina, V. N. Jmerik, et al.. (2009). Optically Enhanced Emission of Localized Excitons inInxGa1−xNFilms by Coupling to Plasmons in a Gold Nanoparticle. Physical Review Letters. 103(3). 37403–37403. 29 indexed citations
17.
Shubina, T. V., A. Vasson, J. Leymarie, et al.. (2007). Localized plasmons at pores and clusters within inhomogeneous indium nitride films. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(7). 2445–2448. 4 indexed citations
18.
Ivanov, S. V., V. N. Jmerik, T. V. Shubina, et al.. (2006). InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500–650 nm range. Journal of Crystal Growth. 301-302. 465–468. 20 indexed citations
19.
Иванов, С. В., T. V. Shubina, V. N. Jmerik, et al.. (2004). Plasma-assisted MBE growth and characterization of InN on sapphire. Journal of Crystal Growth. 269(1). 1–9. 44 indexed citations
20.
Jmerik, V. N., S. V. Sorokin, T. V. Shubina, et al.. (2000). Electrically stable p-type doping of ZnSe grown by molecular beam epitaxy with different nitrogen activators. Journal of Crystal Growth. 214-215. 502–506. 7 indexed citations

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