V. A. Vekshin

1.3k citations

22 papers · 1.0k indexed · h-index 10

Condensed Matter Physics top 1%
Electronic, Optical and Magnetic Materials top 5%
Materials Chemistry top 10%
Atomic and Molecular Physics, and Optics top 5%
Biomedical Engineering

Co-authors: S. V. Ivanov V. V. Mamutin V. Yu. Davydov Takashi Inushima V. V. Emtsev С. В. Иванов T. V. Shubina M. Motokawa
Topics: GaN-based semiconductor devices and materials (22 papers)Ga2O3 and related materials (16 papers)ZnO doping and properties (11 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Physical Review Letters Physical review. B, Condensed matter Applied Physics Letters
Partner nations: Russia Sweden Japan

In The Last Decade

V. A. Vekshin

22 papers receiving 1.0k citations

Peers

Countries citing papers authored by V. A. Vekshin

Since Specialization

Citations

This map shows the geographic impact of V. A. Vekshin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. A. Vekshin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. A. Vekshin more than expected).

Fields of papers citing papers by V. A. Vekshin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. A. Vekshin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. A. Vekshin. The network helps show where V. A. Vekshin may publish in the future.

Co-authorship network of co-authors of V. A. Vekshin

This figure shows the co-authorship network connecting the top 25 collaborators of V. A. Vekshin. A scholar is included among the top collaborators of V. A. Vekshin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. A. Vekshin. V. A. Vekshin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Mie Resonances, Infrared Emission, and the Band Gap of InN 2004 ·Physical Review Letters ·T. V. Shubina,S. V. Ivanov,V. N. Jmerik,D. D. Solnyshkov,V. A. Vekshin,P. S. Kop’ev,A. Vasson,J. Leymarie,A. V. Kavokin,Hiroshi Amano,(unknown),A. Kasic,B. Ḿonemar	164
2	Plasma-assisted MBE growth and characterization of InN on sapphire 2004 ·Journal of Crystal Growth ·С. В. Иванов,T. V. Shubina,V. N. Jmerik,V. A. Vekshin,P. S. Kop’ev,B. Ḿonemar	44
3	Intrinsic electric fields in N-polarityGaN/AlxGa1−xNquantum wells with inversion domains 2003 ·Physical review. B, Condensed matter ·T. V. Shubina,А. А. Торопов,V. N. Jmerik,(unknown),(unknown),В. В. Ратников,А. А. Ситникова,V. A. Vekshin,С. В. Иванов,P. S. Kop’ev,P. Bigenwald,(unknown),P. O. Holtz,B. Ḿonemar	6
4	Photoluminescence and Raman study of hexagonal InN and In‐rich InGaN alloys 2003 ·physica status solidi (b) ·V. Yu. Davydov,A. A. Klochikhin,V. V. Emtsev,A. N. Smirnov,I. N. Goncharuk,A. V. Sakharov,D. A. Kurdyukov,М. В. Байдакова,V. A. Vekshin,С. В. Иванов,J. Aderhold,J. Graul,Akihiro Hashimoto,Akio Yamamoto	22
5	Optical properties of GaN/AlGaN quantum wells with inversion domains 2003 ·physica status solidi (a) ·T. V. Shubina,V. N. Jmerik,(unknown),V. A. Vekshin,А. А. Торопов,S. V. Ivanov,P. S. Kop’ev,J. P. Bergman,K. F. Karlsson,P. O. Holtz,B. Ḿonemar	1
6	Nanometric-Scale Fluctuations of Intrinsic Electric Fields in GaN/AlGaN Quantum Wells with Inversion Domains 2002 ·physica status solidi (b) ·T. V. Shubina,V. N. Jmerik,(unknown),V. A. Vekshin,В. В. Ратников,А. А. Торопов,A. А. Ситникова,S. V. Ivanov,J. P. Bergman,K. F. Karlsson,P. O. Holtz,B. Ḿonemar	5
7	Band Gap of Hexagonal InN and InGaN Alloys 2002 ·physica status solidi (b) ·V. Yu. Davydov,A. A. Klochikhin,V. V. Emtsev,D. A. Kurdyukov,S. V. Ivanov,V. A. Vekshin,F. Bechstedt,(unknown),J. Aderhold,J. Graul,А. В. Мудрый,Hisatomo Harima,Akihiro Hashimoto,Akio Yamamoto,E. E. Häller	249
8	<title>Bandgap of hexagonal InN and InGaN alloys</title> 2002 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·V. Yu. Davydov,A. A. Klochikhin,V. V. Emtsev,A. V. Sakharov,S. V. Ivanov,V. A. Vekshin,F. Bechstedt,(unknown),J. Aderhold,J. Graul,А. В. Мудрый,Hisatomo Harima,Akihiro Hashimoto,Akio Yamamoto,Junqiao Wu,H. Feick,Eugene E. Haller	5
9	Radiation-induced defects in n-type GaN and InN 2001 ·Physica B Condensed Matter ·V. V. Emtsev,V. Yu. Davydov,E. E. Häller,A. A. Klochikhin,(unknown),G. A. Oganesyan,D. S. Poloskin,N. M. Shmidt,V. A. Vekshin,A. S. Usikov	26
10	Transmission electron microscopy of GaN columnar nanostructures grown by molecular beam epitaxy 2001 ·Physics of the Solid State ·V. V. Mamutin,N. Cherkashin,V. A. Vekshin,(unknown),S. V. Ivanov	7
11	X-ray diffractometric study of the influence of a buffer layer on the microstructure of molecular-beam epitaxial InN layers of different thicknesses 2001 ·Physics of the Solid State ·В. В. Ратников,V. V. Mamutin,V. A. Vekshin,С. В. Иванов	2
12	Optical Control of Group-III and N Flux Intensities in Plasma-Assisted MBE with RF Capacitively-Coupled Magnetron Nitrogen Activator 2001 ·physica status solidi (a) ·V. N. Jmerik,V. A. Vekshin,V. Yu. Davydov,В. В. Ратников,(unknown),T. V. Shubina,S. V. Ivanov	2
13	Physical properties of InN with the band gap energy of 1.1 eV 2001 ·Journal of Crystal Growth ·Takashi Inushima,V. V. Mamutin,V. A. Vekshin,S. V. Ivanov,Takuo Sakon,M. Motokawa,(unknown)	196
14	Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties 2000 ·Applied Surface Science ·V. V. Mamutin,T. V. Shubina,V. A. Vekshin,В. В. Ратников,А. А. Торопов,S. V. Ivanov,M. Karlsteen,U. Södervall,M. Willander	11
15	MBE Growth of Hexagonal InN Films on Sapphire with Different Initial Growth Stages 1999 ·physica status solidi (a) ·V. V. Mamutin,V. A. Vekshin,V. Yu. Davydov,В. В. Ратников,T. V. Shubina,S. V. Ivanov,P. S. Kop’ev,M. Karlsteen,(unknown),M. Willander	40
16	Experimental and theoretical studies of phonons in hexagonal InN 1999 ·Applied Physics Letters ·V. Yu. Davydov,V. V. Emtsev,I. N. Goncharuk,A. N. Smirnov,V. D. Petrikov,V. V. Mamutin,V. A. Vekshin,С. В. Иванов,M. B. Smirnov,Takashi Inushima	215
17	Optical Properties of an AlInN Interface Layer Spontaneously Formed in Hexagonal InN/Sapphire Heterostructures 1999 ·physica status solidi (b) ·T. V. Shubina,V. V. Mamutin,V. A. Vekshin,В. В. Ратников,А. А. Торопов,A. А. Ситникова,S. V. Ivanov,M. Karlsteen,U. Södervall,M. Willander,Г. Позина,J. P. Bergman,B. Ḿonemar	7
18	Optical and Structural Characterization of Ga(In)N Three-Dimensional Nanostructures Grown by Plasma-Assisted Molecular Beam Epitaxy 1999 ·physica status solidi (b) ·Г. Позина,J. P. Bergman,B. Ḿonemar,V. V. Mamutin,T. V. Shubina,V. A. Vekshin,А. А. Торопов,S. V. Ivanov,M. Karlsteen,M. Willander	4
19	Mg-Doped Hexagonal InN/Al2O3 Films Grown by MBE 1999 ·physica status solidi (a) ·V. V. Mamutin,V. A. Vekshin,V. Yu. Davydov,В. В. Ратников,Yu. Kudriavtsev,B. Ya. Ber,V. V. Emtsev,S. V. Ivanov	29
20	Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge 1998 ·Technical Physics Letters ·V. V. Mamutin,(unknown),T. V. Shubina,А. А. Торопов,(unknown),V. A. Vekshin,S. V. Ivanov,P. S. Kop’ev	3

About V. A. Vekshin

V. A. Vekshin is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 22 papers that have together received 1.0k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (22 papers), Ga2O3 and related materials (16 papers) and ZnO doping and properties (11 papers). The work is most often cited by research in Condensed Matter Physics (963 citations), Electronic, Optical and Magnetic Materials (530 citations) and Atomic and Molecular Physics, and Optics (399 citations). V. A. Vekshin has collaborated with scholars based in Russia, Sweden and Japan. Frequent co-authors include S. V. Ivanov, V. V. Mamutin, V. Yu. Davydov, Takashi Inushima, V. V. Emtsev, С. В. Иванов, T. V. Shubina, M. Motokawa, Takuo Sakon and I. N. Goncharuk. Their work appears in journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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