V. A. Vekshin

1.3k total citations
22 papers, 1.0k citations indexed

About

V. A. Vekshin is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, V. A. Vekshin has authored 22 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Condensed Matter Physics, 16 papers in Electronic, Optical and Magnetic Materials and 12 papers in Materials Chemistry. Recurrent topics in V. A. Vekshin's work include GaN-based semiconductor devices and materials (22 papers), Ga2O3 and related materials (16 papers) and ZnO doping and properties (11 papers). V. A. Vekshin is often cited by papers focused on GaN-based semiconductor devices and materials (22 papers), Ga2O3 and related materials (16 papers) and ZnO doping and properties (11 papers). V. A. Vekshin collaborates with scholars based in Russia, Sweden and Japan. V. A. Vekshin's co-authors include S. V. Ivanov, V. V. Mamutin, V. Yu. Davydov, Takashi Inushima, V. V. Emtsev, С. В. Иванов, T. V. Shubina, M. Motokawa, Takuo Sakon and I. N. Goncharuk and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

V. A. Vekshin

22 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. A. Vekshin Russia 10 963 530 486 399 239 22 1.0k
I. K. Shmagin United States 11 795 0.8× 389 0.7× 419 0.9× 360 0.9× 223 0.9× 16 1.0k
S. D. Lester United States 13 949 1.0× 383 0.7× 508 1.0× 486 1.2× 168 0.7× 23 1.2k
B. Monemar Sweden 20 1.2k 1.2× 720 1.4× 791 1.6× 511 1.3× 226 0.9× 57 1.5k
J. Off Germany 18 1.4k 1.5× 611 1.2× 599 1.2× 802 2.0× 365 1.5× 55 1.6k
M. S. Minsky United States 16 1.3k 1.4× 619 1.2× 567 1.2× 705 1.8× 302 1.3× 18 1.5k
C. A. Tran Canada 19 728 0.8× 351 0.7× 461 0.9× 650 1.6× 231 1.0× 69 1.2k
Norihide Yamada Japan 11 914 0.9× 391 0.7× 446 0.9× 530 1.3× 253 1.1× 15 1.1k
L. Sierzputowski Poland 13 801 0.8× 376 0.7× 421 0.9× 221 0.6× 115 0.5× 17 904
J. Garczyński Poland 12 766 0.8× 362 0.7× 410 0.8× 212 0.5× 105 0.4× 14 867
S. Krishnankutty United States 16 1.0k 1.1× 576 1.1× 417 0.9× 429 1.1× 293 1.2× 31 1.2k

Countries citing papers authored by V. A. Vekshin

Since Specialization
Citations

This map shows the geographic impact of V. A. Vekshin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. A. Vekshin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. A. Vekshin more than expected).

Fields of papers citing papers by V. A. Vekshin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. A. Vekshin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. A. Vekshin. The network helps show where V. A. Vekshin may publish in the future.

Co-authorship network of co-authors of V. A. Vekshin

This figure shows the co-authorship network connecting the top 25 collaborators of V. A. Vekshin. A scholar is included among the top collaborators of V. A. Vekshin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. A. Vekshin. V. A. Vekshin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Иванов, С. В., T. V. Shubina, V. N. Jmerik, et al.. (2004). Plasma-assisted MBE growth and characterization of InN on sapphire. Journal of Crystal Growth. 269(1). 1–9. 44 indexed citations
2.
Shubina, T. V., S. V. Ivanov, V. N. Jmerik, et al.. (2004). Mie Resonances, Infrared Emission, and the Band Gap of InN. Physical Review Letters. 92(11). 117407–117407. 164 indexed citations
3.
Shubina, T. V., А. А. Торопов, V. N. Jmerik, et al.. (2003). Intrinsic electric fields in N-polarityGaN/AlxGa1−xNquantum wells with inversion domains. Physical review. B, Condensed matter. 67(19). 6 indexed citations
4.
Shubina, T. V., V. N. Jmerik, V. A. Vekshin, et al.. (2003). Optical properties of GaN/AlGaN quantum wells with inversion domains. physica status solidi (a). 195(3). 537–542. 1 indexed citations
5.
Davydov, V. Yu., A. A. Klochikhin, V. V. Emtsev, et al.. (2003). Photoluminescence and Raman study of hexagonal InN and In‐rich InGaN alloys. physica status solidi (b). 240(2). 425–428. 22 indexed citations
6.
Davydov, V. Yu., A. A. Klochikhin, V. V. Emtsev, et al.. (2002). <title>Bandgap of hexagonal InN and InGaN alloys</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 68–71. 5 indexed citations
7.
Davydov, V. Yu., A. A. Klochikhin, V. V. Emtsev, et al.. (2002). Band Gap of Hexagonal InN and InGaN Alloys. physica status solidi (b). 234(3). 787–795. 249 indexed citations
8.
Mamutin, V. V., et al.. (2001). Transmission electron microscopy of GaN columnar nanostructures grown by molecular beam epitaxy. Physics of the Solid State. 43(1). 151–156. 7 indexed citations
9.
Emtsev, V. V., V. Yu. Davydov, E. E. Häller, et al.. (2001). Radiation-induced defects in n-type GaN and InN. Physica B Condensed Matter. 308-310. 58–61. 26 indexed citations
10.
Ратников, В. В., V. V. Mamutin, V. A. Vekshin, & С. В. Иванов. (2001). X-ray diffractometric study of the influence of a buffer layer on the microstructure of molecular-beam epitaxial InN layers of different thicknesses. Physics of the Solid State. 43(5). 949–954. 2 indexed citations
11.
Inushima, Takashi, V. V. Mamutin, V. A. Vekshin, et al.. (2001). Physical properties of InN with the band gap energy of 1.1 eV. Journal of Crystal Growth. 227-228. 481–485. 196 indexed citations
12.
Jmerik, V. N., V. A. Vekshin, V. Yu. Davydov, et al.. (2001). Optical Control of Group-III and N Flux Intensities in Plasma-Assisted MBE with RF Capacitively-Coupled Magnetron Nitrogen Activator. physica status solidi (a). 188(2). 615–619. 2 indexed citations
13.
Mamutin, V. V., T. V. Shubina, V. A. Vekshin, et al.. (2000). Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties. Applied Surface Science. 166(1-4). 87–91. 11 indexed citations
14.
Mamutin, V. V., V. A. Vekshin, V. Yu. Davydov, et al.. (1999). MBE Growth of Hexagonal InN Films on Sapphire with Different Initial Growth Stages. physica status solidi (a). 176(1). 247–252. 40 indexed citations
15.
Davydov, V. Yu., V. V. Emtsev, I. N. Goncharuk, et al.. (1999). Experimental and theoretical studies of phonons in hexagonal InN. Applied Physics Letters. 75(21). 3297–3299. 215 indexed citations
16.
Позина, Г., J. P. Bergman, B. Ḿonemar, et al.. (1999). Optical and Structural Characterization of Ga(In)N Three-Dimensional Nanostructures Grown by Plasma-Assisted Molecular Beam Epitaxy. physica status solidi (b). 216(1). 445–450. 4 indexed citations
17.
Jmerik, V. N., V. V. Mamutin, V. A. Vekshin, et al.. (1999). Coaxial rf-magnetron nitrogen activator for GaN MBE growth. Materials Science and Engineering B. 59(1-3). 60–64. 4 indexed citations
18.
Shubina, T. V., V. V. Mamutin, V. A. Vekshin, et al.. (1999). Optical Properties of an AlInN Interface Layer Spontaneously Formed in Hexagonal InN/Sapphire Heterostructures. physica status solidi (b). 216(1). 205–209. 7 indexed citations
19.
Mamutin, V. V., V. A. Vekshin, V. Yu. Davydov, et al.. (1999). Mg-Doped Hexagonal InN/Al2O3 Films Grown by MBE. physica status solidi (a). 176(1). 373–378. 29 indexed citations
20.
Mamutin, V. V., T. V. Shubina, А. А. Торопов, et al.. (1998). Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge. Technical Physics Letters. 24(6). 467–469. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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