Satoshi Kurai

1.1k total citations
75 papers, 931 citations indexed

About

Satoshi Kurai is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Satoshi Kurai has authored 75 papers receiving a total of 931 indexed citations (citations by other indexed papers that have themselves been cited), including 70 papers in Condensed Matter Physics, 33 papers in Electronic, Optical and Magnetic Materials and 24 papers in Electrical and Electronic Engineering. Recurrent topics in Satoshi Kurai's work include GaN-based semiconductor devices and materials (70 papers), Ga2O3 and related materials (33 papers) and Semiconductor Quantum Structures and Devices (22 papers). Satoshi Kurai is often cited by papers focused on GaN-based semiconductor devices and materials (70 papers), Ga2O3 and related materials (33 papers) and Semiconductor Quantum Structures and Devices (22 papers). Satoshi Kurai collaborates with scholars based in Japan, United Kingdom and South Korea. Satoshi Kurai's co-authors include Shiro Sakai, Yoshiki Naoi, Katsushi Nishino, Tomoya Sugahara, Hisao Satô, Maosheng Hao, S. Tottori, Linda T. Romano, Kenji Yamashita and Yoichi Yamada and has published in prestigious journals such as Journal of Applied Physics, Materials Science and Engineering A and Japanese Journal of Applied Physics.

In The Last Decade

Satoshi Kurai

69 papers receiving 893 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Satoshi Kurai Japan 13 786 413 402 294 294 75 931
Tomoyuki Tanikawa Japan 17 699 0.9× 356 0.9× 376 0.9× 262 0.9× 290 1.0× 80 840
A. E. Nikolaev Russia 18 900 1.1× 460 1.1× 423 1.1× 266 0.9× 458 1.6× 107 1.1k
Drew Hanser United States 20 977 1.2× 512 1.2× 445 1.1× 285 1.0× 423 1.4× 33 1.1k
T. Böttcher Germany 12 865 1.1× 482 1.2× 394 1.0× 266 0.9× 293 1.0× 33 971
T. Paskova United States 19 903 1.1× 444 1.1× 426 1.1× 292 1.0× 318 1.1× 52 992
Р.А. Талалаев Germany 16 768 1.0× 330 0.8× 311 0.8× 264 0.9× 402 1.4× 51 893
Joachim Krüger United States 9 827 1.1× 507 1.2× 400 1.0× 245 0.8× 342 1.2× 19 1.0k
Martin Frentrup United Kingdom 19 684 0.9× 330 0.8× 391 1.0× 158 0.5× 277 0.9× 65 825
В. В. Ратников Russia 16 561 0.7× 380 0.9× 285 0.7× 230 0.8× 318 1.1× 79 799
A. M. Wowchak United States 19 783 1.0× 380 0.9× 486 1.2× 281 1.0× 482 1.6× 61 990

Countries citing papers authored by Satoshi Kurai

Since Specialization
Citations

This map shows the geographic impact of Satoshi Kurai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Satoshi Kurai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Satoshi Kurai more than expected).

Fields of papers citing papers by Satoshi Kurai

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Satoshi Kurai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Satoshi Kurai. The network helps show where Satoshi Kurai may publish in the future.

Co-authorship network of co-authors of Satoshi Kurai

This figure shows the co-authorship network connecting the top 25 collaborators of Satoshi Kurai. A scholar is included among the top collaborators of Satoshi Kurai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Satoshi Kurai. Satoshi Kurai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Murotani, Hideaki, Akihiko Sasaki, Satoshi Kurai, et al.. (2025). Temperature Dependence of Optical Polarization in AlGaN‐Based Multiple Quantum Wells with Emission Wavelengths of 220–260 nm. physica status solidi (b). 262(12).
2.
Kurai, Satoshi, et al.. (2024). Well Number Dependence of Internal Quantum Efficiency in AlGaN Quantum Wells on Low‐Dislocation Sputtered AlN Templates. physica status solidi (b). 261(11). 2 indexed citations
3.
4.
Murotani, Hideaki, Satoshi Kurai, Narihito Okada, et al.. (2024). Temperature‐ and Excitation Power Density‐Resolved Photoluminescence of AlGaN‐Based Multiple Quantum Wells Emitting in the Spectral Range of 220–260 nm. physica status solidi (b). 261(11). 1 indexed citations
5.
Kurai, Satoshi, et al.. (2023). Improvement of electrical properties by insertion of AlGaN interlayer for N-polar AlGaN/AlN structures on sapphire substrates. Japanese Journal of Applied Physics. 62(SN). SN1016–SN1016. 2 indexed citations
6.
7.
Yao, Yongzhao, Yukari Ishikawa, Atsushi Tanaka, et al.. (2023). Investigation of Electrical Properties of N‐Polar AlGaN/AlN Heterostructure Field‐Effect Transistors. physica status solidi (a). 220(16). 6 indexed citations
8.
Murotani, Hideaki, et al.. (2023). Effects of GaN cap layer thickness on photoexcited carrier density in green luminescent InGaN multiple quantum wells. Japanese Journal of Applied Physics. 62(3). 31001–31001. 3 indexed citations
9.
Okada, Narihito, et al.. (2022). Long wavelength red to green emissions from {11 2 ¯ 2} semipolar multi-quantum wells on fully relaxed InGaN underlayer. Japanese Journal of Applied Physics. 62(SA). SA1019–SA1019. 2 indexed citations
10.
Murotani, Hideaki, Satoshi Kurai, Narihito Okada, et al.. (2019). Analysis of efficiency curves in near-UV, blue, and green-emitting InGaN-based multiple quantum wells using rate equations of exciton recombination. Japanese Journal of Applied Physics. 58(SC). SCCB02–SCCB02. 9 indexed citations
11.
Kurai, Satoshi, et al.. (2019). Temperature-dependent cathodoluminescence mapping of InGaN epitaxial layers with different In compositions. Japanese Journal of Applied Physics. 58(SC). SCCB13–SCCB13. 1 indexed citations
12.
Okada, Narihito, et al.. (2018). Separation of effects of InGaN/GaN superlattice on performance of light-emitting diodes using mid-temperature-grown GaN layer. Japanese Journal of Applied Physics. 57(6). 62101–62101. 12 indexed citations
13.
Kurai, Satoshi, et al.. (2017). Potential Barrier Formed Around Dislocations in InGaN Quantum Well Structures by Spot Cathodoluminescence Measurements. physica status solidi (b). 255(5). 13 indexed citations
14.
Kurai, Satoshi, Hideto Miyake, Kazumasa Hiramatsu, & Yoichi Yamada. (2016). Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations. Journal of Applied Physics. 119(2). 5 indexed citations
15.
16.
Okamoto, Takeshi, Jun Nishikawa, Hideo Yanai, et al.. (2013). In vitrobactericidal effects of near-ultraviolet light from light-emitting diodes onHelicobacter pylori. Scandinavian Journal of Gastroenterology. 48(12). 1484–1486. 3 indexed citations
17.
Taguchi, Tsunemasa, Satoshi Kurai, & Masafumi Jinno. (2008). Report of the First International Conference on White LEDs and Solid State Lighting(<Special Issue>Lighting International Conference). JOURNAL OF THE ILLUMINATING ENGINEERING INSTITUTE OF JAPAN. 92(3). 148–154.
18.
Hayashi, Hideki, et al.. (2008). Near-ultraviolet LED of the External Quantum Efficiency Over 45% and its Application to High-color Rendering Phosphor Conversion White LEDs. Journal of Light & Visual Environment. 32(1). 39–42. 15 indexed citations
19.
Yamanaka, Yuki, et al.. (2005). Diffusion of In atoms in InGaN ultra‐thin films during post‐growth thermal annealing by high‐resolution Rutherford backscattering spectrometry. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2407–2410. 8 indexed citations
20.
Hao, Maosheng, T. Sugahara, S. Tottori, et al.. (1998). Correlation between dislocations and luminescence in GaN. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3419. 34190J–34190J. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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