A. А. Ситникова

1.6k total citations
136 papers, 1.3k citations indexed

About

A. А. Ситникова is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, A. А. Ситникова has authored 136 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 85 papers in Electrical and Electronic Engineering, 66 papers in Atomic and Molecular Physics, and Optics and 61 papers in Materials Chemistry. Recurrent topics in A. А. Ситникова's work include Semiconductor Quantum Structures and Devices (59 papers), GaN-based semiconductor devices and materials (41 papers) and Advanced Semiconductor Detectors and Materials (27 papers). A. А. Ситникова is often cited by papers focused on Semiconductor Quantum Structures and Devices (59 papers), GaN-based semiconductor devices and materials (41 papers) and Advanced Semiconductor Detectors and Materials (27 papers). A. А. Ситникова collaborates with scholars based in Russia, Germany and Sweden. A. А. Ситникова's co-authors include S. V. Ivanov, V. N. Jmerik, А. А. Торопов, Demid A. Kirilenko, T. V. Shubina, С. В. Иванов, I. V. Sedova, A. M. Mizerov, Д. В. Нечаев and В. А. Соловьев and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

A. А. Ситникова

131 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. А. Ситникова Russia 18 706 637 611 403 266 136 1.3k
Yuji Kagamitani Japan 19 449 0.6× 501 0.8× 256 0.4× 500 1.2× 314 1.2× 43 995
S. Nakashima Japan 22 705 1.0× 760 1.2× 461 0.8× 377 0.9× 442 1.7× 111 1.6k
К. С. Журавлев Russia 21 1.1k 1.5× 1.1k 1.7× 917 1.5× 534 1.3× 287 1.1× 295 2.0k
Xide Xie China 20 624 0.9× 1.0k 1.6× 495 0.8× 291 0.7× 330 1.2× 81 1.5k
A. Kayani United States 20 364 0.5× 611 1.0× 197 0.3× 394 1.0× 333 1.3× 68 1.1k
Devki N. Talwar United States 22 985 1.4× 921 1.4× 907 1.5× 431 1.1× 322 1.2× 145 1.9k
M. Holtz United States 19 347 0.5× 464 0.7× 190 0.3× 370 0.9× 268 1.0× 51 966
W. Walukiewicz United States 17 599 0.8× 855 1.3× 442 0.7× 303 0.8× 330 1.2× 48 1.3k
Shigeya Naritsuka Japan 19 702 1.0× 675 1.1× 636 1.0× 263 0.7× 101 0.4× 144 1.3k
David B. Laks United States 13 902 1.3× 948 1.5× 786 1.3× 208 0.5× 179 0.7× 23 1.6k

Countries citing papers authored by A. А. Ситникова

Since Specialization
Citations

This map shows the geographic impact of A. А. Ситникова's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. А. Ситникова with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. А. Ситникова more than expected).

Fields of papers citing papers by A. А. Ситникова

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. А. Ситникова. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. А. Ситникова. The network helps show where A. А. Ситникова may publish in the future.

Co-authorship network of co-authors of A. А. Ситникова

This figure shows the co-authorship network connecting the top 25 collaborators of A. А. Ситникова. A scholar is included among the top collaborators of A. А. Ситникова based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. А. Ситникова. A. А. Ситникова is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Сутурин, С.М., A. А. Ситникова, Demid A. Kirilenko, et al.. (2021). Correlation between crystal structure and magnetism in PLD grown epitaxial films of ε-Fe2O3 on GaN. Science and Technology of Advanced Materials. 22(1). 85–99. 14 indexed citations
3.
Astrov, Yu. A., et al.. (2018). GaAs oxidation with Townsend-discharge three-electrode microreactor. Journal of Applied Physics. 124(10). 2 indexed citations
4.
Ukleev, Victor, С.М. Сутурин, Taro Nakajima, et al.. (2018). Unveiling structural, chemical and magnetic interfacial peculiarities in ε-Fe2O3/GaN (0001) epitaxial films. Scientific Reports. 8(1). 8741–8741. 16 indexed citations
5.
Fedorov, Vladimir V., Alexey D. Bolshakov, А М Можаров, et al.. (2017). Effect of Ga seeding layer on formation of epitaxial Y-shaped GaN nanoparticles on silicon. Journal of Physics Conference Series. 917. 32040–32040. 1 indexed citations
6.
Иванова, Е. В., et al.. (2016). Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen. Semiconductors. 50(6). 791–794. 3 indexed citations
7.
Sorokin, S. V., I. V. Sedova, A. А. Ситникова, et al.. (2016). Peculiarities of strain relaxation in linearly graded InxGa1−xAs/GaAs(001) metamorphic buffer layers grown by molecular beam epitaxy. Journal of Crystal Growth. 455. 83–89. 13 indexed citations
8.
Соловьев, В. А., I. V. Sedova, T. V. L’vova, et al.. (2015). Effect of sulfur passivation of InSb (0 0 1) substrates on molecular-beam homoepitaxy. Applied Surface Science. 356. 378–382. 9 indexed citations
9.
Sorokin, S. V., I. V. Sedova, A. А. Ситникова, et al.. (2014). Structural and Optical Properties of Alternately-Strained ZnSxSe1-x/CdSe Superlattices with Effective Band-Gap 2.5-2.6 eV. Acta Physica Polonica A. 126(5). 1156–1158. 1 indexed citations
10.
Kurdyukov, D. A., S. A. Yakovlev, Demid A. Kirilenko, et al.. (2013). Monodisperse spherical mesoporous silica particles: fast synthesis procedure and fabrication of photonic-crystal films. Nanotechnology. 24(15). 155601–155601. 73 indexed citations
11.
Mynbaeva, M. G., et al.. (2012). Graphene/silicon carbide-based scaffolds. Journal of Physics D Applied Physics. 45(33). 335303–335303. 1 indexed citations
12.
Байдакова, М. В., et al.. (2011). Application of the electron probe microanalysis in nitride‐based heterostructures investigation. physica status solidi (a). 208(4). 749–753. 3 indexed citations
13.
Jmerik, V. N., A. M. Mizerov, T. V. Shubina, et al.. (2010). Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma‐assisted molecular beam epitaxy on c‐Al2O3. physica status solidi (a). 207(6). 1313–1317. 8 indexed citations
14.
Убыйвовк, Е. В., I. Ya. Gerlovin, Yu. P. Efimov, et al.. (2009). Experimental determination of dead layer thickness for excitons in a wide GaAs/AlGaAs quantum well. Physics of the Solid State. 51(9). 1929–1934. 6 indexed citations
15.
Ситникова, A. А., A. V. Bobyl, S. G. Konnikov, & V. P. Ulin. (2005). Specific features of epitaxial-film formation on porous III–V substrates. Semiconductors. 39(5). 523–527. 14 indexed citations
16.
Ivanov, S. V., O. G. Lyublinskaya, Yu. B. Vasilyev, et al.. (2004). Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy. Applied Physics Letters. 84(23). 4777–4779. 15 indexed citations
17.
Соловьев, В. А., А. А. Торопов, B. Ya. Meltser, et al.. (2002). GaAs in GaSb: Strained nanostructures for mid-infrared optoelectronics. Semiconductors. 36(7). 816–820. 6 indexed citations
18.
Shubina, T. V., A. А. Ситникова, В. А. Соловьев, et al.. (2000). Defect-induced island formation in CdSe/ZnSe structures. Journal of Crystal Growth. 214-215. 727–731. 6 indexed citations
19.
Берт, Н. А., I. P. Ipatova, V. A. Kapitonov, et al.. (1999). Spontaneously forming periodic composition-modulated InGaAsP structures. Semiconductors. 33(5). 510–513. 8 indexed citations
20.
Antipov, Vladimir G., A. S. Zubrilov, A. Merkulov, et al.. (1995). Molecular beam epitaxy of cubic GaN on a (001) GaAs substrate using hydrazine. Semiconductors. 29(10). 946–951. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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