Д. В. Нечаев

528 citations

52 papers · 397 · h-index 12

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 51
- GaN-based semiconductor devices and materials 51
Electronic, Optical and Magnetic Materials 34
- Ga2O3 and related materials 34

Co-authors: V. N. Jmerik (45 shared papers)S. V. Ivanov (30 shared papers)A. А. Ситникова (10 shared papers)В. В. Ратников (12 shared papers)P. N. Brunkov (10 shared papers)Pavel Aseev (2 shared papers)S. I. Troshkov (11 shared papers)V. I. Kozlovsky (5 shared papers)
Journals: Journal of Crystal Growth (4 papers)Nanomaterials (4 papers)Applied Physics Letters (3 papers)physica status solidi (a) (3 papers)Semiconductor Science and Technology (2 papers)
Partner nations: Russia Belarus Sweden

In The Last Decade

Д. В. Нечаев

50 papers receiving 389 citations

Peers

Countries citing papers authored by Д. В. Нечаев

Since Specialization

Citations

This map shows the geographic impact of Д. В. Нечаев's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Д. В. Нечаев with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Д. В. Нечаев more than expected).

Fields of papers citing papers by Д. В. Нечаев

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Д. В. Нечаев. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Д. В. Нечаев. The network helps show where Д. В. Нечаев may publish in the future.

Co-authors

The 25 scholars most cited alongside Д. В. Нечаев, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Д. В. Нечаев Line = papers co-authored together Д. В. Нечаев links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 52 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE Journal of Crystal Growth ·Д. В. Нечаев, Pavel Aseev, V. N. Jmerik, P. N. Brunkov, Yulia V. Kuznetsova, A. А. Ситникова, В. В. Ратников, С. В. Иванов	2013	49
2	Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring Journal of Crystal Growth ·V. N. Jmerik, A. M. Mizerov, Д. В. Нечаев, Pavel Aseev, A. А. Ситникова, S. I. Troshkov, P. S. Kop’ev, S. V. Ivanov	2012	42
3	Plasma-assisted molecular beam epitaxy of Al(Ga)N layers and quantum well structures for optically pumped mid-UV lasers on c-Al₂O₃ Semiconductor Science and Technology ·S. V. Ivanov, Д. В. Нечаев, A. А. Ситникова, В. В. Ратников, M. A. Yagovkina, Н. В. Ржеуцкий, E. V. Lutsenko, V. N. Jmerik	2014	36
4	E‐beam pumped mid‐UV sources based on MBE‐grown AlGaN MQW physica status solidi (a) ·S. V. Ivanov, V. N. Jmerik, Д. В. Нечаев, V. I. Kozlovsky, Michael D. Tiberi	2015	25
5	High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on c-Al₂O₃ Applied Physics Express ·V. N. Jmerik, Д. В. Нечаев, А. А. Торопов, E. A. Evropeitsev, V. I. Kozlovsky, V. P. Martovitsky, Sergei Rouvimov, S. V. Ivanov	2018	23
6	Strongly Confined Excitons in GaN/AlN Nanostructures with Atomically Thin GaN Layers for Efficient Light Emission in Deep-Ultraviolet Nano Letters ·А. А. Торопов, Eugenii Evropeitsev, M. O. Nestoklon, D. S. Smirnov, T. V. Shubina, V. Kh. Kaĭbyshev, G. V. Budkin, V. N. Jmerik, Д. В. Нечаев, Sergei Rouvimov, S. V. Ivanov, B. Gil	2019	19
7	Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c-Al₂O₃ by using flux- and temperature-modulated techniques Journal of materials research/Pratt's guide to venture capital sources ·V. N. Jmerik, Д. В. Нечаев, Sergei Rouvimov, В. В. Ратников, P. S. Kop’ev, Mikolai V. Rzheutski, E. V. Lutsenko, G. P. Yablonskii, Maher Aljohenii, Abdulaziz Aljerwii, Ahmed Y. Alyamani, S. V. Ivanov	2015	18
8	Effect of stoichiometric conditions and growth mode on threading dislocations filtering in AlN/c-Al2O3 templates grown by PA MBE Superlattices and Microstructures ·Д. В. Нечаев, O A Koshelev, В. В. Ратников, P. N. Brunkov, А. V. Myasoedov, A. А. Ситникова, S. V. Ivanov, V. N. Jmerik	2019	17
9	Phonons in Short-Period GaN/AlN Superlattices: Group-Theoretical Analysis, Ab initio Calculations, and Raman Spectra Nanomaterials ·V. Yu. Davydov, E. M. Roginskiĭ, Yu. É. Kitaev, A. N. Smirnov, I. A. Eliseyev, Д. В. Нечаев, V. N. Jmerik, M. B. Smirnov	2021	14
10	Pulsed growth techniques in plasma-assisted molecular beam epitaxy of Al Ga1−N layers with medium Al content (x=0.4–0.6) Journal of Crystal Growth ·Д. В. Нечаев, P. N. Brunkov, S. I. Troshkov, V. N. Jmerik, S. V. Ivanov	2015	12
11	Monolayer-Scale GaN/AlN Multiple Quantum Wells for High Power e-Beam Pumped UV-Emitters in the 240–270 nm Spectral Range Nanomaterials ·V. N. Jmerik, Д. В. Нечаев, Kseniia N. Orekhova, Nikita D. Prasolov, V. I. Kozlovsky, D. E. Sviridov, М. А. Зверев, Н. А. Гамов, Lars Grieger, Yixin Wang, Tao Wang, Xinqiang Wang, S. V. Ivanov	2021	11
12	Stress control in thick AlN/c-Al₂O₃ templates grown by plasma-assisted molecular beam epitaxy Semiconductor Science and Technology ·O A Koshelev, Д. В. Нечаев, P. N. Brunkov, S. V. Ivanov, V. N. Jmerik	2020	11
13	Defect-related photoluminescence and photoluminescence excitation as a method to study the excitonic bandgap of AlN epitaxial layers: Experimental and ab initio analysis Applied Physics Letters ·Agata Kamińska, Kamil Koroński, Paweł Strąk, A. Wierzbicka, Marta Sobańska, K. Kłosek, Д. В. Нечаев, Vladimir Pankratov, Kirill Chernenko, Stanisław Krukowski, Z. R. Żytkiewicz	2020	10
14	Direct observation of spatial distribution of carrier localization sites in ultrathin GaN/AlN quantum wells by spreading resistance microscopy Applied Physics Letters ·D. E. Sviridov, V. N. Jmerik, Sergei Rouvimov, Д. В. Нечаев, V. I. Kozlovsky, S. V. Ivanov	2019	9
15	Suppression of the quantum-confined Stark effect in AlxGa1−xN/AlyGa1−yN corrugated quantum wells Journal of Applied Physics ·А. А. Торопов, Е. А. Шевченко, T. V. Shubina, V. N. Jmerik, Д. В. Нечаев, M. A. Yagovkina, A. А. Ситникова, S. V. Ivanov, Г. Позина, J. P. Bergman, B. Monemar	2013	8
16	Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III-N heterostructures by molecular-beam epitaxy Technical Physics Letters ·D. S. Zolotukhin, Д. В. Нечаев, S. V. Ivanov, В. Н. Жмерик	2017	8
17	Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates Physics of the Solid State ·E. V. Lutsenko, Н. В. Ржеуцкий, В. Н. Павловский, G. P. Yablonskii, Д. В. Нечаев, A. А. Ситникова, В. В. Ратников, Ya. V. Kuznetsova, В. Н. Жмерик, S. V. Ivanov	2013	7
18	Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates Journal of Crystal Growth ·V. N. Jmerik, Nadezda Kuznetsova, Д. В. Нечаев, T. V. Shubina, Demid A. Kirilenko, S. I. Troshkov, V. Yu. Davydov, A. N. Smirnov, S. V. Ivanov	2017	6
19	The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices Nanomaterials ·V. Yu. Davydov, E. M. Roginskiĭ, Yu. É. Kitaev, A. N. Smirnov, I. A. Eliseyev, E. E. Zavarin, W. V. Lundin, Д. В. Нечаев, V. N. Jmerik, M. B. Smirnov, Markus Pristovsek, T. V. Shubina	2021	6
20	Solar-blind Al x Ga1–x N (x > 0.45) p–i–n photodiodes with a polarization-p-doped emitter Technical Physics Letters ·Nadezda Kuznetsova, Д. В. Нечаев, N. M. Shmidt, S. Yu. Karpov, Н. В. Ржеуцкий, V. E. Zemlyakov, V. Kh. Kaĭbyshev, D. Yu. Kazantsev, S. I. Troshkov, В. И. Егоркин, B. Ya. Ber, Е. В. Луценко, S. V. Ivanov, V. N. Jmerik	2016	6

About Д. В. Нечаев

Д. В. Нечаев is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, Biomedical Engineering and Mechanics of Materials, having authored 52 papers that have together received 397 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (51 papers), Ga2O3 and related materials (34 papers), ZnO doping and properties (22 papers), Metal and Thin Film Mechanics (13 papers), Photocathodes and Microchannel Plates (7 papers), Semiconductor materials and devices (7 papers), Semiconductor Quantum Structures and Devices (6 papers) and Nanowire Synthesis and Applications (5 papers). The work is most often cited by research in Condensed Matter Physics (356 citations), Electronic, Optical and Magnetic Materials (233 citations), Materials Chemistry (168 citations), Mechanics of Materials (78 citations) and Biomedical Engineering (128 citations). Д. В. Нечаев has collaborated with scholars based in Russia, Belarus and Sweden. Frequent co-authors include V. N. Jmerik, S. V. Ivanov, A. А. Ситникова, В. В. Ратников, P. N. Brunkov, Pavel Aseev, S. I. Troshkov, V. I. Kozlovsky, Sergei Rouvimov and S. V. Ivanov. Their work appears in journals such as Journal of Crystal Growth, Nanomaterials, Applied Physics Letters, physica status solidi (a) and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Д. В. Нечаев

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Д. В. Нечаев

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