Д. В. Нечаев

528 total citations
52 papers, 397 citations indexed

About

Д. В. Нечаев is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Д. В. Нечаев has authored 52 papers receiving a total of 397 indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Condensed Matter Physics, 34 papers in Electronic, Optical and Magnetic Materials and 25 papers in Materials Chemistry. Recurrent topics in Д. В. Нечаев's work include GaN-based semiconductor devices and materials (51 papers), Ga2O3 and related materials (34 papers) and ZnO doping and properties (22 papers). Д. В. Нечаев is often cited by papers focused on GaN-based semiconductor devices and materials (51 papers), Ga2O3 and related materials (34 papers) and ZnO doping and properties (22 papers). Д. В. Нечаев collaborates with scholars based in Russia, Belarus and Sweden. Д. В. Нечаев's co-authors include V. N. Jmerik, S. V. Ivanov, A. А. Ситникова, В. В. Ратников, P. N. Brunkov, Pavel Aseev, V. I. Kozlovsky, S. I. Troshkov, Sergei Rouvimov and S. V. Ivanov and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Д. В. Нечаев

50 papers receiving 389 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Д. В. Нечаев Russia	12	356	233	168	128	91	52	397
L. E. Rodak United States	7	348 1.0×	231 1.0×	170 1.0×	135 1.1×	102 1.1×	25	392
O. Landré France	6	365 1.0×	220 0.9×	216 1.3×	175 1.4×	68 0.7×	10	408
Kaddour Lekhal France	12	361 1.0×	232 1.0×	246 1.5×	194 1.5×	115 1.3×	30	470
G. Tourbot France	10	448 1.3×	254 1.1×	301 1.8×	223 1.7×	97 1.1×	17	540
Aimeric Courville France	12	316 0.9×	157 0.7×	170 1.0×	135 1.1×	128 1.4×	27	406
V. Soukhoveev United States	13	398 1.1×	198 0.8×	230 1.4×	98 0.8×	179 2.0×	32	465
Marcus Röppischer Germany	10	310 0.9×	187 0.8×	153 0.9×	110 0.9×	97 1.1×	14	372
Yingdong Tian China	10	368 1.0×	236 1.0×	185 1.1×	180 1.4×	87 1.0×	14	424
Jun Norimatsu Japan	6	484 1.4×	344 1.5×	209 1.2×	201 1.6×	108 1.2×	7	530
Dolar Khachariya United States	12	362 1.0×	209 0.9×	108 0.6×	99 0.8×	184 2.0×	35	399

Countries citing papers authored by Д. В. Нечаев

Since Specialization

Citations

This map shows the geographic impact of Д. В. Нечаев's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Д. В. Нечаев with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Д. В. Нечаев more than expected).

Fields of papers citing papers by Д. В. Нечаев

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Д. В. Нечаев. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Д. В. Нечаев. The network helps show where Д. В. Нечаев may publish in the future.

Co-authorship network of co-authors of Д. В. Нечаев

This figure shows the co-authorship network connecting the top 25 collaborators of Д. В. Нечаев. A scholar is included among the top collaborators of Д. В. Нечаев based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Д. В. Нечаев. Д. В. Нечаев is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Jmerik, V. N., Д. В. Нечаев, S. I. Troshkov, et al.. (2024). Low-defect and stress-free AlN(0001) nanoprisms and microrods selectively grown on micro-patterned c-sapphire substrate by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 124(23).

Jmerik, V. N., Д. В. Нечаев, А. Н. Семенов, et al.. (2023). 2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters. Nanomaterials. 13(6). 1077–1077. 3 indexed citations

Jmerik, V. N., Д. В. Нечаев, M. A. Yagovkina, et al.. (2022). Monolayer‐Range Compositional Modulations in Al_xGa_1−xN_{(x = 0.6–0.75)} Layers Grown Using Plasma‐Assisted Molecular Beam Epitaxy under Me‐Rich Conditions with an Off‐Centered Spatial Distribution of Activated Nitrogen Flux. physica status solidi (a). 219(6). 1 indexed citations

Jmerik, V. N., Д. В. Нечаев, V. I. Kozlovsky, et al.. (2021). Monolayer-Scale GaN/AlN Multiple Quantum Wells for High Power e-Beam Pumped UV-Emitters in the 240–270 nm Spectral Range. Nanomaterials. 11(10). 2553–2553. 11 indexed citations

Roginskiĭ, E. M., Yu. É. Kitaev, A. N. Smirnov, et al.. (2021). Analysis of the sharpness of interfaces in short-period GaN/AlN superlattices using Raman spectroscopy data. Journal of Physics Conference Series. 2103(1). 12147–12147. 1 indexed citations

Davydov, V. Yu., E. M. Roginskiĭ, Yu. É. Kitaev, et al.. (2021). The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices. Nanomaterials. 11(9). 2396–2396. 6 indexed citations

Davydov, Yu. I., et al.. (2020). A Photomultiplier With an AlGaN Photocathode and Microchannel Plates for BaF₂ Scintillator Detectors in Particle Physics. IEEE Transactions on Nuclear Science. 67(7). 1760–1764. 4 indexed citations

Торопов, А. А., M. O. Nestoklon, D. S. Smirnov, et al.. (2019). Strongly Confined Excitons in GaN/AlN Nanostructures with Atomically Thin GaN Layers for Efficient Light Emission in Deep-Ultraviolet. Nano Letters. 20(1). 158–165. 19 indexed citations

Lutsenko, E. V., et al.. (2019). Stimulated emission, photoluminescence, and localisation of nonequilibrium charge carriers in ultrathin (monolayer) GaN/AlN quantum wells. Quantum Electronics. 49(6). 535–539. 4 indexed citations

10.

Нечаев, Д. В., P. N. Brunkov, В. В. Ратников, et al.. (2019). Stress evolution during growth of AlN templates on c-Al2O3 substrates by plasma-assisted molecular beam epitaxy. Journal of Physics Conference Series. 1400(5). 55010–55010. 1 indexed citations

11.

Davydov, V. Yu., E. M. Roginskiĭ, Yu. É. Kitaev, et al.. (2019). Phonons in short-period (GaN)_m(AlN)_n superlattices: ab initio calculations and group-theoretical analysis of modes and their genesis. Journal of Physics Conference Series. 1400(6). 66016–66016. 3 indexed citations

12.

Нечаев, Д. В., В. В. Ратников, P. N. Brunkov, et al.. (2019). Effect of stoichiometric conditions and growth mode on threading dislocations filtering in AlN/c-Al2O3 templates grown by PA MBE. Superlattices and Microstructures. 138. 106368–106368. 17 indexed citations

13.

Jmerik, V. N., Д. В. Нечаев, А. А. Торопов, et al.. (2018). High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on c-Al₂O₃. Applied Physics Express. 11(9). 91003–91003. 23 indexed citations

14.

Нечаев, Д. В., А. Н. Семенов, S. I. Troshkov, et al.. (2018). Ultraviolet light-emitting diodes and photodiodes grown by plasma-assisted molecular beam epitaxy. Journal of Physics Conference Series. 993. 12037–12037. 1 indexed citations

15.

Jmerik, V. N., T. V. Shubina, Д. В. Нечаев, et al.. (2018). Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE. Semiconductors. 52(5). 667–670. 2 indexed citations

16.

Jmerik, V. N., Д. В. Нечаев, T. V. Shubina, et al.. (2017). Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates. Journal of Crystal Growth. 477. 207–211. 6 indexed citations

17.

Jmerik, V. N., Д. В. Нечаев, Sergei Rouvimov, et al.. (2015). Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c-Al₂O₃ by using flux- and temperature-modulated techniques. Journal of materials research/Pratt's guide to venture capital sources. 30(19). 2871–2880. 18 indexed citations

18.

Rouvimov, Sergei, V. N. Jmerik, Д. В. Нечаев, et al.. (2015). Defect engineering in AlGaN-based UV optoelectronic heterostructures grown on c-Al₂O₃ by plasma-assisted molecular beam epitaxy. MRS Proceedings. 1741. 1 indexed citations

19.

Нечаев, Д. В., V. N. Jmerik, A. M. Mizerov, P. S. Kop’ev, & S. V. Ivanov. (2012). RHEED monitoring of elastic stresses during MBE growth of group III nitride heterostructures. Technical Physics Letters. 38(5). 443–445. 4 indexed citations

20.

Jmerik, V. N., A. M. Mizerov, Д. В. Нечаев, et al.. (2012). Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring. Journal of Crystal Growth. 354(1). 188–192. 42 indexed citations

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