T. Bretagnon

1.1k total citations
55 papers, 952 citations indexed

About

T. Bretagnon is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, T. Bretagnon has authored 55 papers receiving a total of 952 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 29 papers in Atomic and Molecular Physics, and Optics and 25 papers in Materials Chemistry. Recurrent topics in T. Bretagnon's work include Semiconductor Quantum Structures and Devices (22 papers), GaN-based semiconductor devices and materials (22 papers) and Semiconductor materials and devices (17 papers). T. Bretagnon is often cited by papers focused on Semiconductor Quantum Structures and Devices (22 papers), GaN-based semiconductor devices and materials (22 papers) and Semiconductor materials and devices (17 papers). T. Bretagnon collaborates with scholars based in France, Canada and United States. T. Bretagnon's co-authors include S. Dannefaer, Pierre Lefèbvre, D. Kerr, T. Taliercio, T. Guillet, N. Grandjean, Bernard Gil, B. Damilano, J. Massies and B. Gil and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

T. Bretagnon

52 papers receiving 926 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Bretagnon France 19 474 437 431 406 227 55 952
В. В. Ратников Russia 16 230 0.5× 561 1.3× 380 0.9× 318 0.8× 285 1.3× 79 799
I. K. Shmagin United States 11 360 0.8× 795 1.8× 419 1.0× 391 1.0× 389 1.7× 16 1.0k
Takashi Inushima Japan 16 422 0.9× 780 1.8× 677 1.6× 351 0.9× 410 1.8× 64 1.2k
Yoshihiro Kangawa Japan 20 393 0.8× 856 2.0× 752 1.7× 686 1.7× 432 1.9× 143 1.5k
J. Allègre France 18 749 1.6× 428 1.0× 643 1.5× 683 1.7× 219 1.0× 69 1.2k
R. L. Hengehold United States 17 327 0.7× 257 0.6× 603 1.4× 704 1.7× 234 1.0× 84 1.0k
Johji Nishio Japan 16 574 1.2× 497 1.1× 323 0.7× 862 2.1× 283 1.2× 87 1.3k
R. Dwiliński Poland 16 280 0.6× 1.0k 2.3× 541 1.3× 409 1.0× 499 2.2× 31 1.2k
L. Sierzputowski Poland 13 221 0.5× 801 1.8× 421 1.0× 306 0.8× 376 1.7× 17 904
J. Garczyński Poland 12 212 0.4× 766 1.8× 410 1.0× 289 0.7× 362 1.6× 14 867

Countries citing papers authored by T. Bretagnon

Since Specialization
Citations

This map shows the geographic impact of T. Bretagnon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Bretagnon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Bretagnon more than expected).

Fields of papers citing papers by T. Bretagnon

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Bretagnon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Bretagnon. The network helps show where T. Bretagnon may publish in the future.

Co-authorship network of co-authors of T. Bretagnon

This figure shows the co-authorship network connecting the top 25 collaborators of T. Bretagnon. A scholar is included among the top collaborators of T. Bretagnon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Bretagnon. T. Bretagnon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Andreakou, P., B. Jouault, M. Vladimirova, et al.. (2015). Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells. Physical Review B. 91(20). 18 indexed citations
2.
Brault, J., Daniel Rosales, B. Damilano, et al.. (2014). Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters. Semiconductor Science and Technology. 29(8). 84001–84001. 23 indexed citations
3.
Rosales, Daniel, Bernard Gil, T. Bretagnon, et al.. (2014). Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells. Journal of Applied Physics. 116(9). 14 indexed citations
4.
Faure, Stéphane, T. Guillet, Pierre Lefèbvre, T. Bretagnon, & B. Gil. (2008). Comparison of strong coupling regimes in bulk GaAs, GaN, and ZnO semiconductor microcavities. Physical Review B. 78(23). 46 indexed citations
5.
Lefèbvre, Pierre, Sokratis Kalliakos, T. Bretagnon, et al.. (2004). Observation and modeling of the time-dependent descreening of internal electric field in a wurtziteGaN/Al0.15Ga0.85Nquantum well after high photoexcitation. Physical Review B. 69(3). 53 indexed citations
6.
Bretagnon, T., Sokratis Kalliakos, Pierre Lefèbvre, et al.. (2003). Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation. Physical review. B, Condensed matter. 68(20). 33 indexed citations
7.
Morel, A., Pierre Lefèbvre, T. Taliercio, et al.. (2003). Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wells. Physica E Low-dimensional Systems and Nanostructures. 17. 64–67. 6 indexed citations
8.
Lefèbvre, Pierre, T. Taliercio, Sokratis Kalliakos, et al.. (2001). Carrier Dynamics in Group-III Nitride Low-Dimensional Systems: Localization versus Quantum-Confined Stark Effect. physica status solidi (b). 228(1). 65–72. 12 indexed citations
9.
Dannefaer, S., et al.. (1999). Characterization of vacancies in as-grown and electron irradiated α-quartz by means of positron annihilation. Journal of Applied Physics. 86(1). 190–197. 3 indexed citations
10.
Bretagnon, T., S. Dannefaer, & D. Kerr. (1997). Positron annihilation investigations of vacancies in InP produced by electron irradiation at room temperature. Journal of Applied Physics. 81(8). 3446–3452. 12 indexed citations
11.
Dannefaer, S., Wei Zhu, T. Bretagnon, & D. Kerr. (1996). Vacancies in polycrystalline diamond films. Physical review. B, Condensed matter. 53(4). 1979–1984. 41 indexed citations
12.
Taliercio, T., E. Massone, A. Foucaran, et al.. (1995). Porous silicon membranes for gas-sensor applications. Sensors and Actuators A Physical. 46(1-3). 43–46. 25 indexed citations
13.
Dannefaer, S. & T. Bretagnon. (1995). Character and distribution of vacancies in Czochralski-grown silicon ingots. Journal of Applied Physics. 77(11). 5584–5588. 3 indexed citations
14.
Bretagnon, T., S. Dannefaer, & D. Kerr. (1993). Indium vacancy in as-grown InP: A positron annihilation study. Journal of Applied Physics. 73(9). 4697–4699. 25 indexed citations
15.
Dannefaer, S., et al.. (1992). Heat-Treatment Induced Defects in Cz-Silicon. MRS Proceedings. 262. 3 indexed citations
16.
Dodelet, J. P., et al.. (1991). Electrical Characterization of GaAs Epitaxial Layers Grown by CSVT from Zn‐doped GaAs Sources. Journal of The Electrochemical Society. 138(3). 830–834. 4 indexed citations
17.
Bretagnon, T., et al.. (1990). Hole traps in n-type epitaxial GaAs layers grown by the close-spaced vapor transport technique. Solid State Communications. 74(4). 223–226.
18.
Bretagnon, T., G Bastide, & M. Rouzeyre. (1990). Annealing study of the electron-irradiation-induced defectsH4andE11in InP: Defect transformation (H4-E11)→H4’. Physical review. B, Condensed matter. 41(2). 1028–1037. 18 indexed citations
19.
Bretagnon, T., G Bastide, & M. Rouzeyre. (1989). Hole-capture properties of the electron-irradiation-induced deep-levelH5inp-type InP: A charge-controlled bistable model. Physical review. B, Condensed matter. 40(6). 3749–3755. 9 indexed citations
20.
Gouskov, L., et al.. (1987). Heat treatment effect on p type Zn doped InP substrates. Revue de Physique Appliquée. 22(10). 1159–1168. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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